• 제목/요약/키워드: bulk deposition

검색결과 232건 처리시간 0.03초

압전층의 2단 증착법을 이용한 체적 음향파 박막형 공진기의 제작과 성능향상에 관한 연구 (A Study of the Fabrication and Enhancement of Film Bulk Acoustic Wave Resonator using Two-Step Deposition Method of Piezoelectric Layer)

  • 박성현;추순남;이능헌
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권7호
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    • pp.308-314
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    • 2005
  • The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

마이크로파 통신소자용 ZnO 압전 박막의 구조적 전기적 특성 (Structural and Electrical properties of Piezoelectric ZnO Films Grown by Pulsed Laser Deposition for Film Bulk Acoustic Resonator)

  • 김건희;강홍성;안병두;임성훈;장현우;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.41-42
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    • 2005
  • The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.

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Study of P3HT and PCBM Thin Films Prepared by UHV Electrospray Deposition

  • Kim, Ji-Hoon;Hong, Kong-An;Seo, Jae-Won;Park, Yong-Sup
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.329-329
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    • 2011
  • We investigated the thin films of poly(3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) prepared by ultrahigh vacuum (UHV) electrospray depositioin (ESD) by using in-situ XPS, UPS and ambient-pressure AFM. The morphology, chemical structures, and interface properties of these materials, most widely used for bulk heterojunction organic solar cells, were studied depending on the ESD solution compositions and concentrations. We found that the solution conductivity and flow rate as well as applied voltage are the important parameters for stable electrospray and film formation. These results suggest that UHV ESD is a viable method for the deposition of multilayers of polymers under UHV condition. We also discuss the energy level alignment for the various deposition conditions at the interface, which is one of the most important operating parameters of the bulk heterojunction organic solar cells.

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Deposition of Ferroelectric PB(Zr0.52Ti0.48)O3 Films on Platinized Silicon Using Nd:YAG Laser

  • Im, Hoong-Sun;Kim, Sang-Hyeob;Choi, Young-Ku;Lee, Kee-Hag;Jung, Kwang-Woo
    • Bulletin of the Korean Chemical Society
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    • 제18권1호
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    • pp.56-61
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    • 1997
  • Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

전주, 군산, 남원지역 강수의 Sr, Pb동위원소 지화학 (The Sr and Pb Isotopic and Geochemical Properties of the Atmospheric Bulk Deposition of Jeonju, Gunsan, and Namweon Areas)

  • 전서령;정재일
    • 자원환경지질
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    • 제38권4호
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    • pp.463-479
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    • 2005
  • 전북의 전주, 군산, 남원지역에서 주기적으로 채수된 강수(bulk deposition)를 지화학적으로 고찰하고 Sr과 Pb 동위원소의 환경추적인자로서의 적용 여부를 알아보고자 하였다. 강수는 pH $4\~7$의 약산성내지 산성을 띄며, 건기에는 높고, 우기에는 자연산성도 수준인 5.0수준을 유지한다. 강수에 의한 희석작용으로, 우기이후의 강수는 TDS 및 EC도 낮아지나 다시 건기에 들어서면서 상승한다. 겨울철에는 난방연료의 연소에 의해 $SO_4$$NO_3$이 높은 함량을 보이며, 여름철은 $CO_2$가스의 영향으로 탄산농도가 약간 높은 경향을 보인다 양이온은 겨울철에 Na의 함량이 높고, 봄부터 여름철에는 Ca의 함량이 높게 나타난다. 지리산에 인접한 남원이 전반적으로 낮은 EC 및 TDS값을 가지고 인구밀집과 도시화가 심한 전주지역은 대체로 높다. 남원지방은 다량의 수목의 호흡작용에 의한 대기중 이사화탄소의 함량이 높아 여름철 탄산 농도가 타 지역에 비해 높다. 군산지역은 해염의 영향으로 대기중 Cl의 함량이 높다. Al, Cu, Zn은 TDS와 상관계수 0.5이상의 양호한 상관관계를 보여 이들 원소가 미량원소 중 강수의 화학적 성상에 영향을 미치는 원소들 이라고 볼 수 있다. $^{87}Sr/^{86}Sr$ 값은 0.7109-0.7128으로 세 지역 모두 유사하며, 해수보다 다소 높은 값을 보이고 있어 주변의 토양입자, 꽃가루, 기타 인위기원의 에어로졸 등의 영향이 있음을 암시하나 지역 전반에 걸친 자세한 동위원소적 고찰이 있어야만 보다 정확한 해석이 가능할 것으로 생각된다. 강수의 Pb 동위원소 조성도 세 지역 모두 유사하며, 서울 에어로졸의 Pb 동위원소 조성 범위내에 포함되고 북경의 에어로졸 범위에서는 약간 벗어나 있다. 이는 한반도내의 대기 중에 함유되어 있는 Pb은 모두 유사한 기원으로 휘발유의 연소에서 발생하는 것으로 생각되며, 중국으로부터 기원한 Pb의 존재 가능성은 내포하고 있으나 그 기여율은 적을 것으로 보인다.

이온 보조 증착에 의한 광박막의 제작과 특성 (Preparation and Characterization of Optical Thin Films by Ion-assisted Deposition)

  • 황보창권
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 광학 및 양자전자학 워크샵
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    • pp.84-93
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    • 1989
  • 광박막의 광학적, 기계적 및 화학적 특성은 bulk에 비해 떨어지며, 제작된 광박막의 특성이 설계치보다 못한경우도 때로 관측된다. 이러한 문제점의 대부분이 광막박의 고유 구조인 기둥 미세 구조로부터 기인한다. 광박막의 기둥구조를 변화시켜 bulk의 특성에 가깝게 가는 방법으로 시행되고 있는 여러 기술중, 광박막계에 비교적 큰 변화를 가져온 이온보조 증착 기술과 이에의해 제작된 광박막의 특성 및 앞으로의 전망에 관한여 알아본다.

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ZnO 박막의 RF 마그네트론 스퍼터 증착 중 미리 가열된 기판의 자연냉각 효과 (The Natural Cooling Effects of Pre-heated Substrate during RF Magnetron Sputter Deposition of ZnO)

  • 박성현;이능헌
    • 전기학회논문지
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    • 제56권5호
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    • pp.905-909
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    • 2007
  • Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

바람의 강도에 따른 강하먼지와 불용성 성분의 조성특성 (A study on bulk deposition flux of dustfall and insoluble components by the wind intensity in Busan, Korea)

  • 황용식;김유근;박종길;문덕환
    • 한국환경과학회지
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    • 제11권7호
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    • pp.651-662
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    • 2002
  • Weather elements were observed by the AWS (Automatic Weather System) and dustfall particles were collected by the modified American dust jar (wide inlet bottle type) at 4 sampling sites in Busan area from March. 1999 to February, 2000. Thirteen chemical species (Al, Ca, Cd, Cr, Cu, Fe, K, Mg, Mn, Ni, Pb, Si, and Zn) were analyzed by AAS and ICP. The purposes of this study were to estimate qualitatively various bulk deposition flux of dustfall and insoluble components by applying regional and seasonal wind intensity. Frequency of wind speed were found in order of low(1-3m/s), very low(<1m/s), medium(3-8m/s) and high(>8m/s), and annual mean had higher range at low(1-3m/s) for 56.3%. Strong negative linear correlation were observed between dustfall and wind direction (northeastern and eastern), but strong positive linear correlation were observed between dustfall and wind direction (western and northwestern) at industrial, commercial and coastal zone(p<0.05). While a negative correlation were observed between wind speed frequency of very low(<1 m/s) and dustfall, and positive correlation were observed between wind speed frequency of low(1-3m/s) and dustfall in coastal zone(p<0.05). The correlation coefficient was observed 0.556 between wind speed frequency of low(1-3m/s) and Ni by commercial zone(p<0.05). The correlation coeffcient show well-defined insoluble trace metals (Al, Ca, Cr, Cu, Fe, Pb, and Zn) and wind speed frequency of low(1-3m/s) at coastal zone, which was found significant difference(p<0.01).

Silicon Nitride Layer Deposited at Low Temperature for Multicrystalline Solar Cell Application

  • Karunagaran, B.;Yoo, J.S.;Kim, D.Y.;Kim, Kyung-Hae;Dhungel, S.K.;Mangalaraj, D.;Yi, Jun-Sin
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.276-279
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    • 2004
  • Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

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