• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.550-554
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• 1998

We suggested the new method of thermal screen in Bridgman-Stockbarger method to control the polygrain, the internal cavities and solid-liquid (SL) interface. $CaF_2$ single crystal of 6 inch was grown perfectly when we adopted to use a graphite pipe and a ceramic warmer in the conditions of growth rate 2 mm/hr, vertical temperature of $14^{\circ}C$ for freezing and temperature of $1324^{\circ}C$ at conical tip of crucible. The light scattering phenomena occurred by internal cavities were controlled as decreasing the freezing rate to 2 mm/hr and/or as adopting the rotation of melt (7 rpm).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.23-33
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• 1991

Mn - Zn Ferrite has the natural characteristics of incongruent melting and the zinc oxide evaporation while the crystal is being grown. As a result of these, it comes into existence to be a non-uniform distribution of cations along the crystal growth axis and also Pt particles are usually precipitated into the crystals in Bridgman method since the melt zone is maintained for a long time in the crucible. These have bad effects on the magnetic properties of ferrites. But, to overcome these faults and then acquire the better single crystals. new modified growth method was developed and the growth factors were investigated as following: melt height in the crucible, surface tension and density of melt, the behavior of melt at interface, the shapes of crucible and solid -liquid interface, powder feeding rate, and the crystal growing speed. In additon, when we analyzed the compositional fluctuations of grown crystals, they were supressed within 1.5 mol% $Fe_20_3$, 2 mol% MnO, ZnO respectively with comparing to initial composition of crystal and the microstructures of crystals on the(110) plane were observed by optical microscope through the chemical etching technique and the magnetic properties were determined.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.539-543
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• 1992

The continuous growth method was developed for Mn-Zn Ferrite single crystals. It is a new process that the polycrystalline MnχZn1-χFe2O4 raw materials are supplied continuously from the powder feeding system to the crucible heated by R.F. induction and melted in the crucible, and after the single crystals seed is attached to crucible's hole, the crystals are pulled downward with rotation. Growing the crystals by using the growth method different from the conventional Bridgman or Floating Zone method, we defined the factors having effect on the crystal growing through the pre-experiments. They are temperature distribution in the crucible, melt velocity according to its height, wettability between the crucible's bottom and melt. Therefore, Mn-Zn Ferrite single crystals were to be grown by attaining the appropriate melt height in the crucible, powder feeding rate, temperature gradient between the crucible and interface, crystal growing speed, and this method was confirmed to have possibility for single crystal growing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.548-554
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• 1997

The single crystal of $Mg_{0.16}Zn_{0.84}$Te:Co(Co:0.01 mole%) was grown by vertical Bridgman method. The crystal structure of $Mg_{0.16}Zn$_{0.84}$Te:Co and optical absorption properties of this compound were studied. The grown single crystal has a cubic structure and a lattice constant a=6.1422 $\AA$ were determined by X-ray diffraction. As a result of the optical absorption spectra of $Mg_{0.16}Zn_{0.84}$Te:Co, the intracenter transitions due to $Co^{2+}$ ions were detected for $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$.The charge transfer transition near the absorption edge was observed in the wavelength range of 550 to 770 nm. According to the crystal field theory, the crystal field parameter(Dq) and the Racah parameter(B) were determined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.306-317
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• 1995

Abstract Gallium arsenide crystal is usually grown from the melt by the horizontal Bridgman method. We constructed pseudo - steady - state model for crystal growth of GaAs which inclue melt, crystal and the free interface. Mathematical equations of the model were solved for flow, temperature, and concentration field in the melt and temperature field in the crystal. The location and shape of the interface were also solved simultaneously. In 2 - dimensional model, the shape of the interface is flat with adiabatic thermal boundary condition, but it becomes curved with completely conducting thermal boundary condition. In 3 - dimensional model, the interface is less curved than 2 - dimensional case and the flow intensity is similar to that of 2 - dimensional case. With the increase of flow intensity vertical segregation shows maximum value in both 2 - and 3 - D model. However, the maximum value occurs in lower flow intensity in 2 - D model because the interface is more curved for the same flow intensity.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Analytical Science and Technology
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• v.5 no.3
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• pp.327-332
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• 1992

Mn-Zn ferrite single crystals show some fluctuations in composition along the direction of growth by the conventional Bridgman method. The single crystal with a uniform composition was obtained by maintaining the liquid composition content. For example, two batches of powder were prepared : one is consisted of 52 mol% of $Fe_2O_3$, 30 mol% of MnO, and 18 mol% Zn(Composition A), and the other 53 mol% of $Fe_2O_3$, 28.5 mol% of MnO, and 18.5 mol% ZnO(Composition B). Crack-free single crystals with the uniform composition B were grown in a size of 60mm diameter, 300mm long by melting the pellets of composition A and followed by supplying the composition B as tablets. Initial permeabilities were obtained above 600 at 5 MHz in the region of 30~270 mm along the direction of growth.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.220-226
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• 1993

An investigation was made of the dependences of the lattice constants and the energy gap on the composition of $TlGa_xIn_{1-x}Se_2$ single cystals grown by Bridgman method. It was found that a discontinuity in $TlGa_xIn_{1-x}Se_2$ solid solutions occurred in the composition range 0.25$0.0{\leq}X{\leq}0.25$) to the monoclinic structure ($0.65{\leq}X{\leq}1.0$) was observed in this composition range. The temperature dependences of the energy gap and the dielectric constant in $TlGaSe_2$ single crystal have shown that the anomalies appeared at 107 K and 120 K corresponding to first-order and second-order phase transitions, respectively.