• 제목/요약/키워드: breakdown rate

검색결과 349건 처리시간 0.03초

Fluid Infiltration Effect on Breakdown Pressure in Laboratory Hydraulic Fracturing Tests

  • Diaz, Melvin B.;Jung, Sung Gyu;Lee, Gyung Won;Kim, Kwang Yeom
    • 지질공학
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    • 제32권3호
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    • pp.389-399
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    • 2022
  • Observations on the influence of the fluid infiltration on the breakdown pressure during laboratory hydraulic fracturing tests, along with an analysis of the applicability of the breakdown pressure prediction for cylindrical samples using Quasi-static and Linear Elastic Fracture Mechanics approaches were carried out. These approaches consider fluid infiltration through the so-called radius of fluid infiltration or crack radius, a parameter that is not a material property. Two sets of tests under pressurization rate controlled and injection rate controlled tests were used to evaluate the applicability of these methods. The difficulty of the estimation of the radius of fluid infiltration was solved by back calculating this parameter from an initial set of tests, and later, the obtained relationships were used to predict breakdown pressures for a second set of tests. The results showed better predictions for the injection rate than for the pressurization rate tests, with average errors of 3.4% and 18.6%, respectively. The larger error was attributed to differences in the testing conditions for the pressurization rate tests, which had different applied vertical pressures. On the other hand, for the tests carried out under constant injection rate, the Linear Elastic Fracture Mechanics solution reported lower errors compared to the Quasi-static solution, with values of 3% and 3.8%, respectively. Moreover, a sensitivity analysis illustrated the influence of the radius of fluid penetration or crack radius and the tensile strength on the breakdown pressure, suggesting a need for a careful estimation of these values. Then, the calculation of breakdown pressure considering fluid infiltration in cylindrical samples under triaxial conditions is possible, although larger data sets are desirable to validate and derive better relations.

충진재 함량 변화에 따른 에폭시 복합재료의 흡수율과 직류 절연파괴강도의 변화 (The variation of water absorption rate and DC dielectric breakdown strength of Epoxy composites due to filler content)

  • 이덕진;김탁용;신성권;김명호;김경환;김재환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2349-2351
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    • 1999
  • In this paper, the variable absorption rates and DC dielectric breakdown strength of epoxy composites were measured at boiling absorption condition in order to observe the influences of moisture in out door use. Also, in order to improve withstand voltage properties at moisture absorbtion condition. IPN (interpenetrating polymer network) method which had been already reported, was introduced and the influence was investigated. As a result, it was confirmed that the moisture absorption rate was increased and DC dielectric breakdown strength was degraded with boiling time and filler content increasing. On the other hand, it was confirmed that moisture absorption rate and DC dielectric breakdown strength degrading rate were lowered by the improvement of adhesion strength In IPN specimens.

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Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성 (Plasma Corrosion and Breakdown Voltage Behavior of Ce Ion Added Sulfuric Acid Anodizing According to Electrolyte Temperature)

  • 소종호;윤주영;신재수
    • 반도체디스플레이기술학회지
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    • 제20권1호
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    • pp.37-41
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    • 2021
  • We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.

필드 플레이트가 설계된 다이아몬드 쇼트키 장벽 다이오드 (Diamond Schottky Barrier Diodes With Field Plate)

  • 장해녕;강동원;하민우
    • 전기학회논문지
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    • 제66권4호
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    • pp.659-665
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    • 2017
  • Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

오손액의 표면장력이 폴리머 복합재의 트래킹 열화에 미치는 영향 (The Effect of the Surface Tension of Contaminants on Tracking Ageing of Polymeric Composites)

  • 조한구;천종욱;이운용;한동희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.435-438
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    • 2002
  • In this paper, the effect of surface tension, wettability, flow rate of contaminants with varying surfactant content and frequency of applied voltage on the tracking breakdown of epoxy insulating materials were investigated. As the flow rate of contaminant is increased, the surface resistivity is decreased, and the leakage current is increased, the time to tracking breakdown is decreased. It is found that time to tracking breakdown depends on the surface tension of contaminant, that is difference of wettability And as the frequency of applied voltage is increased, time to tracking breakdown decreased.

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고분자 절연재료의 트랙킹 열화에 미치는 오손액의 영향 (The Effect of Contaminants on Tracking Aging in Polymer Insulating Materials)

  • 조한구;박용관
    • E2M - 전기 전자와 첨단 소재
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    • 제10권8호
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    • pp.770-777
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    • 1997
  • Some polymer materials including epoxy resin are being instead of porcelain for outdoor insulating materials such as insulators bushings cable terminators and surge arrester housing. And the largest problem to be overcomed is the tracking and erosion of the outdoor polymer material brought about by dry band arcing during prolonged exposure to contaminations. In this paper the effect of surface tension wettability flow rate of contaminants with varying surfactant content and frequency of applied voltage on the tracking breakdown of epoxy insulating materials were investigated. As the flow rate of contaminant is increased the surface resistivity is decreased and the leakage current is increased the time to tracking breakdown is decreased. It is found that time to tracking breakdown depends on the surface tension of contaminant that is difference of wettability. And as the frequency of applied voltage is increased time to tracking breakdown decreased.

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The effect of oxygen on NAD breakdown in salmonella typhimurium

  • Park, Uhnmee
    • Journal of Microbiology
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    • 제33권3호
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    • pp.234-238
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    • 1995
  • The breakdown rate of NAD in Salmonella typhimurium was investigated both in aerobic and anaerobic conditions. After NAD is broken down to nicotinamide ring containing moiety, almost all the nicotinamide ring containing moiety recycles back to NAD pool. However almost none of the adenine containing moiety recycles back. We pulse-label the endogeneous NAD with [$\^$14/C]-adenine and [$\^$3/H]- niacin. The remaining [$\^$14/C]-radioactivity in NAD pool at each time was regarded as unbroken portion of NAD, WHERE AS THE OF [$\^$3/H] was served as a total amount of NAD to start with. Under aerobic condition, the half-life of NAD was around 2 hours. However, the breakdown rate was significantly reduced (around 3-5 fold) under anaerobic condition. The observation that under aerobic conditions, NAD turnover is considerably faster than under anaerobic conditions suggests that oxygen has important effect in NAD breakdown.

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게이트가 파인 구조를 이용한 SOI MOSFET에서의 항복전압 개선 (Breakdown Voltage Improvement in SOI MOSFET Using Gate-Recessed Structure)

  • 최진혁;박영준;민홍식
    • 전자공학회논문지A
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    • 제32A권12호
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    • pp.159-165
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    • 1995
  • A gate-recessed structure is introduced to SOI MOSFET's in order to increase the source-to-drain breakdown voltage. A significant increase in the breakdown voltage is observed compared with that of a planar single source/drain SOI MOSFET without inducing the appreciable reduction of the current drivability. We have analyzed the origin of the breakdown voltage improvement by the substrate current measurements and 2-D device simulations, and shown that the breakdown voltage improvement is caused by the reductions in the impact ionization rate and the parasitic bipolar current gain.

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고기압 $SF_{6}$가스에서 전극표면 상태가 절열파괴 강도에 미치는 영향 (Influence of electrode surface conditions on breakdown field strength in pressurized $SF_{6}$)

  • 이동인
    • 전기의세계
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    • 제30권3호
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    • pp.172-176
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    • 1981
  • The reduction in the breakdown field strength due to electrode surface roughness was calculated by applying the streamer breakdown criterion and the surface roughness factor, and measurements of static breakdown voltage for a gap with an artificial protrusion were made under the uniform field at pressures up to 4 bar in pressurized $SF_{6}$. The effect of polarity of highly stressed electrode on the breakdown field strength was also investigated. The measurements have shown that the measured breakdown levels for a protrusion located on the cathode agree with those calculated and the values measured with an identical anode protrusion are substantially higher and more scattered. This may be explained if it assumed that a high rate of production of initiatory electrons is maintained at the tip of a cathode protrusion by field emission. In practical point of view, the breakdown levels in pressurized $SF_{6}$ can be bereliably estimated from the values calculated.

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학교시설물 유지관리를 위한 공사 분류 체계 분석 (Analysis of Construction Work Breakdown Structure of Maintenance of Educational Facility)

  • 류한국
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2015년도 춘계 학술논문 발표대회
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    • pp.251-252
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    • 2015
  • Enough school facility maintenance data should be accumulated in a database or data warehouse in order to supply information about school facility correct maintenance budget plan, budget assignment, and cycle and rate of maintenance or replacement. For those, this research analyze the present school facility maintenance practice and budget and construction cost structure. In order to solve the problems, this study analyze the present practice of maintenance and replacement and obtain LCC(Life cycle cost) data, perform expert interview and then establish construction work breakdown structure of maintenance of educational facility by combining work breakdown structure(WBS) and cost breakdown structure(CBS).

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