• 전기학회논문지
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• 제62권2호
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• pp.219-227
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• 2013

This paper reported a study on the thermal, mechanical and electrical insulation properties of epoxy/mica composites. To investigate the effect of mica content, glass transition temperature, mechanical properties such as tensile and flexural strength, and insulation breakdown properties for epoxy composites with various contents of mica. The effect of insulation thickness on insulation breakdown property was also studied. It was observed that tensile and flexural strength decreased with increasing mica content, while elastic modulus increased as the mica content increased. AC insulation breakdown strength for all epoxy/mica composites was higher than that of neat epoxy and that of the system with 20 wt% mica was 14.4% improved. As was expected, insulation breakdown strength at $30^{\circ}C$ was far higher than that at $130^{\circ}C$, and it was also found that insulation breakdown strength was inversely proportion to insulation thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.488-489
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• 2007

In this paper, We studied the properties of a cable insulate capacity between surfaces with the variation of the interfacial breakdown. Because the fault was mainly occurred in this interface. The insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. As a function of silicon oil and interfacial roughness were investigated. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were improved by increased interfacial of oil, decreased surface roughness.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.101-104
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• 2013

The effect of the mixing ratio of spherical silica on the electrical insulation breakdown strength in an epoxy/silica composite was studied. Spherical silicas with two average particle sizes of $5{\mu}m$ and $20{\mu}m$ were mixed in different mixing ratios, and their total filling content was fixed at 60 wt%. In order to observe the dispersion of the silicas and the interfacial morphology between silica and epoxy matrix, scanning electron microscopy (SEM) was used. The electrical insulation breakdown strength was estimated in sphere-sphere electrodes with different insulation thicknesses of 1, 2, and 3 mm. Electrical insulation breakdown strength decreased with increasing mixing ratio of $5/20{\mu}m$ and the thickness dependence of the breakdown strength was also observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.775-778
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• 2000

In this paper, the life-time of macro interface between Epoxy/EPDM which consists in underground power cable joints is predicted. The electrode system of specimen is designed by FEM(finite elements method). The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law, and the long breakdown life time can be evaluated.

• 한국표면공학회지
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• 제32권3호
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• pp.341-343
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range $1-100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. The first sign of incipient breakdown revealed by transmission electron microscopy of stripped films, is always the appearance of dark regions about 1,000 nm in diameter, representing local overgrowth of the film. The breakdown mechanism is closely related to thermal effects, because temperature rises at regions representing local overgrowth in the stripped films were observed at voltages close to the breakdown voltage, likely arising through impact ionization.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.280-285
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• 2023

A breakdown voltage and breakdown electric field of the transformer insulating oil of liquid dielectric were studied in uniform electric field and non-uniform electric field and the transformer insulating oil was observed by the process reached breakdown. Insulation performance evaluation of the liquid dielectric was evaluated at the electrode spacing of 2.5 mm under the conditions of domestic and international standards (KS C IEC 60156), so a comparative review was conducted at the electrode spacing of 2.5 mm. When the electrode spacing is 2.5 mm, the average breakdown voltage is 38.5 kV for sphere-sphere electrodes, 26.6 kV for plate-plate electrodes, 22.9 kV for needle-needle electrodes, and 24.3 kV for sphere-needle electrodes. 23.7 kV for the sphere-plate electrode, and 20.7 kV for the needle-plate electrode. From these results, it can be seen that the average value of the breakdown voltage at the electrode spacing of 2.5 mm, in ascending order, is sphere-sphere, plate-plate, sphere-needle, sphere-plate, needle-needle and needle-plate. It was found that the breakdown voltage of the unequal field was lower than that of the equal field.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1388-1390
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• 1995

The characteristic of dielectric breakdown in solid insulating material dominates the reliability and safety of power equipment and affects directly to its life. In this point of view, the thickness and temperature dependence of dielectric breakdown strength and mechanism of dielectric breakdown in low density polyethylene which has been employed widely as insulating material have been technically reviewed by examinations of thermal property. The dielectric breakdown strength depending on its thickness was measured 2.6[MV/cm] at the thickness of 20[${\mu}m$] and 1.9[MV/cm] at the thickness of 75[${\mu}m$] based on ambient temperature of 30[$^{\circ}C$]. It is shown the temperature dependence that dielectric breakdown strength decreases in linear as the thickness increases. The dielectric breakdown strength depending on temperature was measured 2.6[MV/cm] at the temperature of 30[$^{\circ}C$], 1.6[MV/cm] at 60[$^{\circ}C$] and 1.3[MV/cm] at 90[$^{\circ}C$] based on the thickness of 20[${\mu}m$]. As the ambient temperature increases, the temperature dependence is shown that a very large drop is occurred up to temperature of 60[$^{\circ}C$] and a very small drop is discovered over 60[$^{\circ}C$].

• 성인간호학회지
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• 제19권3호
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• pp.470-482
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• 2007

Purpose: This study aimed to describe the experience of family breakdown of Hwabyung patients in a socio-cultural context. Methods: Data for this study came from 5 participants, 2 family members and 1 friend of participant by interviews and participant observations from January 2006 to April 2007. Sociology of everyday lives analyzing method were adopted. Results: There were two processes of family breakdown ; sudden on set and progressive processes. The sudden breakdown was unpredictable death of a husband, the significant family member. On the other hand, their family structure and function were broken down through the husband, who repeatedly destructive and malicious behaviors. The experience of family breakdown of middle-aged women with Hwabyung in a socio-cultural context was weakened or severed family-relationships, exhaustion of economic sources, and the breakdown of participant's body. Participant's experience of family breakdown were influenced by Korean culture, the patriarchal social system and the clan-centered family system. Conclusion: Hwabyung is the result of a clan-centered family system and patriarchal system. The approach to Hwabyung should involve not only the person with the illness but also their family.

• Journal of information and communication convergence engineering
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• 제16권1호
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.