• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.245-245
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• 2008

In this work, we describe the characterization of PVP films synthesized by spin-coater method and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on Au gate electrode. We investigated the surface and electrical properties of PVP layer using an AFM method and MIM structure, and estimated the device properties of OTFTs including $I_D-V_D$, $I_D-V_G$, threshold voltage $V_T$, on/off ratio, and field effect mobility.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.191-194
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• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.161-164
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• 2002

Polycrystalline and epitaxial heterostructure films of $La_{0.5}Sr_{0.5}CoO_{3}/Pb(Nb_{0.04}Zr_{0.28}Ti_{0.68})O_{3}/La_{0.5}Sr_{0.5}CoO_{3}$ (LSCO/PNZT/LSCO) capacitors were evaluated in terms of low voltage and high speed operation in high density memory, using TiN/Pt conducting barrier combination. Structural studies for a high density ferroelectric memory process flow, which requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack, indicate complete phase purity (i.e. fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, and high-speed characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties.

• Journal of Industrial Technology
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• v.26 no.B
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• pp.221-226
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• 2006

Electrical impedance tomography (EIT) is a technique for determining the electrical conductivity and permittivity distribution within the interior of a body from measurements made on its surface. One recent application area of the EIT is the detection of breast cancer by imaging the conductivity and permittivity distribution inside the breast. The present "gold standard" for breast cancer detection is X-ray mammography, and it is desirable that EIT and X-ray mammography use the same geometry. This paper presents a forward model of a simplified mammography geometry for EIT imaging. The mammography geometry is modeled as a rectangular box with electrode arrays on the top and bottom planes. A forward model for the electrical impedance imaging problem is derived for a homogeneous conductivity distribution and Validated by experiment using a phantom tank.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.62-64
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• 2005

Indium Tim Oxide(ITO) thin film was prepared for TOLEDs by Facing Targets Sputtering(FTS) apparatus which can suppress the damage of organic layer due to the collisions of high energetic particles. In particular, ITO thin film was prepared with changing the distance between two targets for reduced the bombardment by high energetic particles such as ${\gamma}-electron$ or negative oxygen ions. The electrical and optical properties of ITO thin films as a function of distance of between two targets were measured. Additionally, the ITO thin films were prepared on the cell (cell : MgAg/LiF/EML/HTL/ bottom electrode) with distance of between two targets. And the I-V characteristics of ITO/cell was investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.714-716
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• 2002

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1263-1269
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• 1996

반도체 메모리 소자에 이용되는 하부전극의 Pt 박막을 MOCVD 증착방법을 이용하여 SiO2(100nm)/Si 기판위에 증착하였다. 반응개스로 O2개스를 사용하였을 경우에 순수한 Pt 박막을 얻었으며 증착층은(11)우선방향을 가지고 성장하였다. 증착온도가 45$0^{\circ}C$에서는 결정립 경계에 많은 hole이 형성되어 박막의 비저항을 증가시켰다. MOCVD에 의해 얻어진 Pt 박막은 전 증착온도범위에서 인장응력을 가지고 있었으며 40$0^{\circ}C$이상의 온도에서 hole이 형성되면서 응력은 감소하였다. MOCVD-Pt 위에 PEMOCVD로 증착한 강 유전체 SrBi2Ta2O9박막은 균일하고 치밀한 미세구조를 보였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.323-327
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• 2006

In this paper a new wire-wire discharge system with a slit dielectric harrier has been proposed, and, its corona discharge and ozone generation characteristics have been investigated experimentally. When the slit mica barrier is installed between corona wires, instead of the grounded plate electrode, a significant increase in the generation of ozone, about 2.2 times higher than that of the conventional ones without the slit harrier, could be obtained. Photographs show that this type of discharge system with a slit barrier was found to produce a corona discharge twice, once from the upper and bottom corona wires, and. again from both sides of surfaces and slits of the slit barrier. As a result, the proposed discharge system has the potential to increase significantly ozone production and it may be useful as an effective means for removing pollutant gases.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.