• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.103-110
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• 2001

Gate oxide scaling for sub-l00nm CMOS devices has been studied. Issues on the gate oxide scaling are reviewed, which are boron penetration, reliability, and direct tunneling leakage currents. Reliability of Sub-2.0nm oxides and the device performance degradation due to boron penetration are investigated. Especially, the effect of gate leakage currents on the transistor characteristics is studied. As a result, it is proposed that thinner oxides than previous expectations may be usable as scaling proceeds. Based on the gate oxide thickness optimization process we have established, high performance CMOS transistors of $L_{gate}=70nm$ and $T_{ox}=1.4nm$ were fabricated, which showed excellent current drives of $860\mu\textrm{A}/\mu\textrm{m}$ (NMOS) and $350\mu\textrm{A}/\mu\textrm{m}$ (PMOS) at $I_{off}=10\mu\textrm{A}/\mu\textrm{m}$ and $V_dd=1.2V$, and CV/I of 1.60ps (NMOS) and 3.32ps(PMOS).

• Advances in materials Research
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• v.1 no.3
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• pp.205-219
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• 2012

Co-Re alloy development is prompted by the search for new materials for future gas turbines which can be used at temperatures considerably higher than the present day single crystal Ni-based superalloys. The Co-Re based alloys are designed to have very high melting range. Although Co-alloys are used in gas turbine applications today, the Co-Re system was never exploited for structural applications and basic knowledge on the system is lacking. The alloy development strategy therefore is based on studying alloying additions on simple model alloy compositions of ternary and quaternary base. Various strengthening possibilities have been explored and precipitation hardening through fine dispersion of MC type carbides was found to be a promising route. In the early stages of the development we are mainly dealing with polycrystalline alloys and therefore the grain boundary embrittlement needed to be addressed and boron addition was considered for improving the ductility. In this paper recent results on the effect of boron on the strength and ductility and the stability of the fine structure of the strengthening TaC precipitates are presented. In the beginning the alloy development strategy is briefly discussed.

• Journal of Powder Materials
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• v.9 no.5
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• pp.352-358
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• 2002

The effects of boron or manganese added as $B_4C$, Mn, $TiB_2$, B on TiC-30vo1.%$Ni_3Al$ cermet sintered at 1380 and $1400^{\circ}C$ for 1 hour, were examined in relation with shrinkage, relative density, microstructure, lattice parameter, hardness and fracture toughness ($K_{IC}$). The results are summarized as follows: 1) The highest shrink-age showed about 30.5% in the specimen added B$_4$C and the maximum relative density was about 99% in the specimen added $TiB_2$; 2) The grains of TiC were grown during sintering and made the surrounding structure by adding boron and manganese. The largest grain size showed about $2.8\mutextrm{m}$ in the specimen with boron sintered at $1400^{\circ}C$;3) The lattice parameter of TiC was about $4.325\AA$ and $Ni_3Al$ about $3.592\AA$ by adding other elements; 4) The highest hardness was about $1100kgf/\textrm{mm}^2$ in the specimen with B4C; 5) The fracture toughness ($K_{IC}$) showed about $15MNm^{-3/2}$ in the specimen added $TiB_2$.

• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.426-429
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• 2017

In this study, we investigated the effect of BN (boron nitride) on the thermal and the electrical conductivity of composites. In case of epoxy/BN composites, the thermal conductivity was increased as the BN contents were increased. Epoxy/AgNP (Ag nanoparticle) nanocomposites exhibited a slight change of thermal conductivity and showed a electrical percolation threshold at 20 vol% of Ag nanoparticles. At the fixed Ag nanoparticle content below the electrical percolation threshold, increasing the amount of BN enhanced the electrical conductivity as well as thermal conductivity for the epoxy/AgNP/BN composites.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.28-32
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• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.109-117
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• 1994

Effect of ultrasonic agitation on the contact properties was studied in Ni electroless plating and Pd activation. P-type Si bare wafers were used as substrate and DMAB was used as reducing agent due to its good electrical properties, solderability and compatibility to substrate. In activation, high density Pd nuclei of small size were formed during ultra-sonic agitation compared to that of no stirring. In electroless plating, the plating rate was enhanced by 30∼90% by using ultrasonic agitation. In elecrtoless plating, inhibitor is the most effective additives in ultrasonic agitation. In this experi-ment, thiourea was used as inhibitor. The less the amount of the inhibitor, the more ultrasonic agitation efficiency. It is confirmed by SEM that Ni-B films formed by ultrasonic were coarser, less porous, and denser than those of no stirring. In ultrasonic agitation, boron content of the films was more than those of no stirring. In this case, the more DMAB concentration, the higher the temperature, the less pH, the more boron content. Resistivity of the films formed by ultrasonic agitation was higher than that of no strirring. As the content of boron was increased, the resistivity of the films was increased exponentially.

• Journal of the Korean Wood Science and Technology
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• v.48 no.4
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• pp.458-471
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• 2020

Effect of pre-treatment and compression ratio on specific gravity (SG) and dimensional stability improvement of three lesser-used wood species from natural forest area of North Kalimantan Province, Indonesia had been investigated. Hot soaking at 80℃ for 3 hours within 2 and 5% of boron solution was applied as pre-treatment, while compression ratio applied was 20 and 40% from the initial thickness. Densification was conducted using hot pressing machine at 30 kg/㎠ of pressure and 160℃ of temperature for 15 minutes. Specific gravity was measured gravimetrically, while dimensional stability was evaluated through thickness swelling and water absorption as the indicator. Results show that SG of densified wood was influenced by wood species and compression ratio, but not by pre-treatment applied; while dimensional stability was influenced by wood species, compression ratio, and pre-treatment. Specific gravity and water absorption of densified wood was improved significantly. Specific gravity increased 28.86-63.03%, while water absorption decreased 12.80-15.89%. Thickness swelling of 20% densified wood was lower than that of 40% densified wood.

• Journal of Korea Foundry Society
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• v.36 no.5
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• pp.147-152
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• 2016

Aluminum has been used as an alternative material for copper, due to its good electrical and thermal conductivities. However, small quantities of transition elements such as Ti and V affect the conductivities of aluminum. Therefore, in this study, the influence of B addition to reduce the effects of Ti and V on the conductivities of aluminum was investigated. Both the electrical and thermal conductivities of aluminum were improved with addition of B up to 0.05 wt%, while the conductivities were gradually reduced with an excess amount of B. SEM-EDS and XRD results exhibited that B reacted with Ti and V element to form diborides, such as $TiB_2$ and $VB_2$ phase, and those diborides tended to settle down to the bottom of the crucible because their densities were higher than that of aluminum melt. As a result, B reduced the deleterious effects of Ti and V, and the electrical and thermal conductivities of aluminum were improved.

• Nuclear Engineering and Technology
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• v.33 no.1
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• pp.12-24
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• 2001

The post-LOCA long term cooling (LTC) performance of the Korean Standard Nuclear Power Plant (KSNPP) is analyzed for both small break loss-of-coolant accidents (LOCA) and large break LOCA at cold leg. The RELAP5/MOD3.2.2 beta code is used to calculate the LTC sequences based on the LTC plan of the Korean Standard Nuclear Power Plants (KSNPP). A standard input model is developed such that LOCA and the followed LTC sequence can be calculated in a single run for both small break LOCA and large break LOCA. A spectrum of small break LOCA ranging from \ulcorner.02 to 0.5 k2 of break area and a double-ended guillotine break are analyzed. Through the code calculations, the thermal-hydraulic behavior and the boron behavior are evaluated and the effect of the important action including the safety injection tank (SIT isolation and the simultaneous injection in LTC procedure is investigated. As a result, it is found that the sufficient margin is available in avoiding the boron precipitation in the core. It is also found that a further specific condition for the SIT isolation action need to be setup and it is recommended that the early initiation of the simultaneous injection be taken for larger break LTC sequences.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.30-40
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed Environment-Dependent Interatomic Potential(EDIP) was suitable for ultra low energy ion implantation simulation, and found that point defects formation energies were in good agreement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. Most of the damages that are produced by collision cascades are concentrated into amorphous-like pockets. Also, We upgraded MDRANGE code for silicon ion implantation process simulation. We simulated ultra-low energy boron ion implantation, 200eV, 500eV, and 1000eV respectively, and calculated boron profiles with silicon substrate temperature and tilt angle. We investigated that below 1000eV, channeling effect must be considered.