• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.6-14
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• 2012

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.27-30
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• 2002

Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.826-833
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• 2004

In this study, photosensitivity dynamics in SiO$_2$ glass with the composition similar to that of silica Planar Lightwave Circuit (PLC) devices was investigated as a fundamental study prior to the device fabrication. Silica bulk glasses with similar composition to the core layer of PLC devices were prepared with variable composition of B$_2$O$_3$. The photosensitivity in boron and germanium co-doped SiO$_2$ glass yields refractive index change $\Delta$n as high as 10$\^$-3/. However such index modulation disappeared after annealing. From the result of annealing experiment and W absorption / Raman spectra, we conclude the compaction model is applicable to our glass system.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.303-308
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• 2011

The effect of heat treatment on the micro-structures and the mechanical properties of 0.002% boron added low carbon steel was investigated. The tensile strength reached the peak at about $880-890^{\circ}C$ with the rising quenching temperature and then the hardness decreased sharply, but the tensile strength hardly decreased. The tensile and yield strength decreased and the total elongation increased with a rising tempering temperature, but the tensile and yield strength sharply fell and the total elongation prominently increased from above a $400-450^{\circ}C$ tempering temperature. Tempered martensite embrittlement (TME) was observed at tempering condition of $350-400^{\circ}C$. In the condition of quenching at $890^{\circ}C$ and tempering at $350^{\circ}C$, the boron precipitates were observed as Fe-C-B and BN together. The hardness decreased in proportion to the tempering temperature untill $350^{\circ}C$ and dropped sharply above $400^{\circ}C$ regardless of the quenching temperature.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2984-2996
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• 2023

A 100 kW thermal power pool-type light water reactor and Pu(Be) as a fast neutron source were used to determine the appropriate carrier for irradiating boron-containing samples with neutron beams. The tested materials (carriers) were subjected to neutron beams in the reactor's tangential channel. The geometrical arrangement of experimental facilities relative to the neutron beam trajectory, as well as the effect of sample thickness on the count rate, were investigated. The majority of the detectable charged particles emitted by the neutron beam's interaction with tested materials and the detector's detecting layer are protons (recoiled hydrogen) and particles generated in nuclear reactions (protons and alpha particles), respectively. Stopping and Range of Ions in Matter (SRIM) software was used to do theoretical calculations for the range of expected released particles in various materials, including human tissue. The results of measurement and calculation are in good agreement. According to experiments and theoretical calculations, the number of protons emitted by tissue-like materials may commit a dose comparable to that of boron capture reactions. Furthermore, the range of protons is significantly larger than that of alpha particles, which most probably changes dose distribution in healthy cells surrounding the tumor, which is undesirable in the BNCT approach.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.7-19
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• 1981

Anodization method is utilized in order to measure diffusion profiles of boron and arsenic in silicon. The solution used for silicon anodization is Ethylene glycol +KNO3(0.04N), The thickness of silicon which is consumed by a single 200V anodization is 460$\pm$40A regardless of wafer type. The profiles of boron and arsenic in silicon after predeposition process are investigated. The diffusion coefficients of both dopants depending on impurity concentration are extrated from these profiles. The base pull-in effect has been observed in prototype npn transistors with arsenic doped emitter.

• Transactions of Materials Processing
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• v.19 no.4
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• pp.203-209
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• 2010

In the hot press forming process (HPF), a martensitic structure is obtained by controlling the cooling rate when cooling a boron sheet that is heated up to over $900^{\circ}C$. The HPF process has various advantages such as the improvement in formability and material properties and minimal spring back of the deformed materials. The factors related to the cooling rate depend on the heat transfer characteristics between heated materials and dies. Therefore, in this study, the cooling rate is controlled by adjusting the heat transfer coefficient of the material at the pressing process. And, the mechanical properties and microstructure of the deformed material is demonstrated during the HPF process where cold dies are used to form the heated steel plate. This is achieved by varying the major forming conditions that control the cooling rate regarded as the most important process parameter.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.23-25
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds.