• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 추계학술대회 논문집
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• pp.146-149
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• 2007

The effects of boron additions in steels have long been recognized as very important, mainly with respect to hardnability of heat treatable steels. The systematics of structure and properties of boron steels will then be illustrated in the context of low-alloy steels with carbon contents raging from 0.05 to 0.25% and boron contents 0-130 ppm. we investigated the effect of the microstructure and mechanical properties with heat treatment condition of the boron-treated(0.0013 ppm) low carbon(0.2 %C) low alloy steel. The specimens were austenitised for 5 and 10, 15 min at $880{\sim}940^{\circ}C$(with/without tempered at 150, 180 and $210^{\circ}C$ for the various periods of time from 60 min to 120 min) After heat treatment, mechanical properties were measured by tensile test and hardness test. For analysis of microstructure, Optical/SEM analysis and XRD were carried out.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 한국환경보건학회지
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• 제44권6호
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• pp.556-562
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• 2018

Objectives: This study was conducted to investigate the boron concentrations in 30 slime products and estimate children's dermal exposure to boron. Methods: Thirty slime products from online and offline stores were purchased for boron analysis. The boron content of each slime sample was analyzed using ICP-OES. A nationwide survey was performed to determine use patterns of slimes by a home-visit survey of 10,000 children divided into three age groups: 0-2, 3-6, and 7-12 years. The dermal exposure to boron was calculated using an exposure algorithm for child slime users. Results: The proportion of the child population using slime was 45.8%, and the mean use frequency was $2.5{\pm}3.8$ per week (range: 0.08-35). Mean time spent playing with slime was $19.6{\pm}11.3min$ (range: 1-100). Twenty-five of the thirty slimes contained a boron concentration exceeding the EU limit for toys made with sticky material of 300 mg/kg. Dermal exposure ranged from $0.0008-13.78{\mu}g/kg/day$ with the maximum weight fractions of boron in the 30 products. The dermal exposure estimate was the highest in 7-12 years old group. Conclusion: Slime use among Korean children may cause high exposure to boron. Regulation is needed to minimize boron exposure from slime products.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.91-94
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• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• Corrosion Science and Technology
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• 제19권1호
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• pp.1-7
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• 2020

Chalk River Unidentified Deposits (CRUDs) were collected from the Korean pressurized water reactor (PWR) plant (A, B, and C) where the axial offset anomaly (AOA) occurred. AOA, also known as a CRUD-induced power shift, is one of the key issues in maintaining stable PWR plant operations. CRUDs were sampled from spent nuclear fuel rods and analyzed using an electron probe micro-analyzer (EPMA). This paper describes the characteristics of boron-deposits from the CRUDs sampled from twice-burnt assemblies from the Korean PWR. The primary coolant of a PWR contains boron and lithium. It is known that boron deposition occurs in a thick CRUD layer under substantial sub-cooled nucleate boiling (SNB). The results of this study are summarized as follows. Boron was not found at the locations where the existence was confirmed in simulated CRUDs, in other words, the cladding and CRUD boundaries. Nevertheless, we clearly observed the presence of boron and confirmed that boron existed as a lump in crystalline form. In addition, the study confirmed that CRUD existed in a crystal form with a unique size of about 10 ㎛.

• 한국정보전자통신기술학회논문지
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• 제2권3호
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• pp.97-102
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• 2009

심층수를 음용수화 하는 것은 심층수에 포함되어 있는 붕소 때문에 크게 제약을 받고있다. 붕소는 사람과 식물에게 유독한 것으로 보고되고 있다. 이러한 붕소를 제거하는 유용한 방법이 몇 가지 있는데, 본 논문에서는 해수에 포함된 붕소를 제거하기 위한 붕소제거제를 폴리머 레진 형태로 합성 하였다. 합성된 레진을 IR분석을 통해 특성을 분석하였고, SEM을 이용하여 그 표면을 관찰하였다. 붕소제거능력을 평가하기 위해 레진을 직경이 0.25mm, 0.5mm 및 1.0mm가 되도록 구분하여 준비하고 베치방식의 실험을 통해 그 결과를 관찰했다.

• 한국토양비료학회지
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• 제8권4호
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• pp.195-198
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• 1975

해바라기의 생육불량(生育不良) 원인(原因)을 토양(土壤) 및 식물체(植物體) 분석(分析)에 의(依)하여 본 결과 붕소결핍(硼素缺乏)으로 나타났으며 다음과 같은 결과를 얻었다. 1. 붕소결핍(硼素缺乏)은 토양(土壤)의 유효붕소함량(有効硼素含量)(열수침출(熱水浸出))이 적은데 기인(基因)했으며 유효붕소(有効硼素) 임계농도(臨界濃度)는 0.17ppm으로 나타났다. 2. 식물체(植物體)에서의 임계농도(臨界濃度)는 화부(花部)(두부(頭部))에서 15ppm 근(根)에서는 10ppm으로 나타났다. 상위엽(上位葉)으로 갈수록 B함량(含量)은 상당히 감소하였다. 3. 붕소(硼素)가 적은 토양(土壤)은 Ca가 많았으며 유기물(有機物)이나 산도(酸度) 기타 양분(養分)과의 관계가 불확실했다. 4. 붕소결핍(硼素缺乏)된 식물체(植物體)는 Ca와 P가 두부(頭部)에는 높고 근부(根部)에 낮으며 N는 높고 K는 낮은 편이며 Mg와 Fe는 관계가 불확실했다. 5. 붕소결핍(硼素缺乏)은 줄기와 상부(上部)의 갈변고사(褐變枯死) 및 줄기와 뿌리가 부분적으로 파열(破裂)되고 흑변(黑變)하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.99-100
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• 2006

$BF_2$ molecule 이온주입은 ULSI기술에 있어서 ultra shallow 정합형성을 위해고 P-MOS를 제작하는데 매우 유용한 기술이다. 주입된 boron 이온의 분포를 위해서 $0.05{\mu}m$ 나노스케일의 마스크사이즈의 패턴에 이온 주입한 결과를 일차원적인 분포해석을 위해서 UT-Marlowe tool을 사용하여 gauss 및 pearson 모델의 도핑분포를 나타내었다. 또한 이 데이터를 TSUPREM4에 적용하여 이차원적인 도핑분포와 열처리 후에 boron의 gauss 및 pearson의 모델의 도핑분포를 본 논문에 나타내었다.

• Fibers and Polymers
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• 제2권4호
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• pp.190-195
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• 2001

Additives, such as sodium perborate and borax, were examined in dialdehyde wrinkle resistant finishing of cotton. Results indicated that the whiteness index(WI) of cotton treated with dialdehyde and additive showed about 90% of WI of the untreated cotton but with decrease in wrinkle recovery angle (WRA) due to inhibition effect of these additives. Effect of additive on the WRA reduction was more prominent with glutaraldehyde than with glyoxal. Reduction in WRA of cotton treated with both dialdehydes and boron compound was minimized by simultaneous addition of formic acid in the bath. Addition of formic acid was also generally beneficial in maintaining WI retentions after 8 months storage. Furthermore, boron compounds were also effective in improving retentions of mechanical properties. By FTIR analysis the residual aldehyde group was detected on the dialdehyde-finished cotton, whereas no peak was shown by addition of boron compounds. This suggested that the residual aldehyde group was a main cause of fabric yellowing on the dialdehyde-finished cotton. Dialhehyde with boron compound, therefore, can be used to replace a conventional formaldehyde-containing wrinkle resistant finishing of cotton.