• 제목/요약/키워드: boron

검색결과 1,597건 처리시간 0.028초

Tungsten(W)- Boron(B) - Carbon(C) - Nitride(N) 확산방지막의 Boron 불순물에 의한 열확산 특성 연구 (Boron concentration effect of tungsten - Boron - carbon - nitride thin film for diffusion barrier)

  • 김수인;이창우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.87-88
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    • 2007
  • 반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

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$Poly{\cdot}Si-SiO_2$를 통한 저농도 붕소확산 (Boron Diffusion of Low Concentration through Poly $Poly{\cdot}Si-SiO_2$)

  • 김정회;주병권;김철주
    • 대한전자공학회논문지
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    • 제24권2호
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    • pp.248-253
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    • 1987
  • Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

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Boron정량(定量)에 대(對)한 검토(檢討) (Investigation on Boron Analysis)

  • 박인
    • 한국식품영양과학회지
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    • 제1권1호
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    • pp.33-35
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    • 1972
  • The curcumin method was adopted in this research for quantitative analysis of boron in plants. An experiment if this method is suitable to present conditions of our laboratory led us to the following conclusions. 1. In making ashes the addition of 0.5ml saturated $Ba(OH)_2$ solution to boron $1{\gamma}$. could completely prevent it from volatilizing. 2. The soft glass ware made in Korea was unfit for this experiment because of the differences in quality. The polyethylene cup was desirable for the quantitative analysis of boron.

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침전법과 ICP-AES법에 의한 철강 시료 중 Boron의 분석 (Determination of Boron in Steels by Precipitation Method and ICP-AES)

  • 임헌성;이석근
    • 분석과학
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    • 제15권2호
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    • pp.180-183
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    • 2002
  • The new useful method for the direct determination of trace boron in iron matrix was studied by applying the precipitation of $Fe(OH)_3$ and ICP-AES. Optimum pH range was 11 ~ 12.5. Linear concentration range of boron was $0.01{\sim}1.0{\mu}g/m{\ell}$ in $5000 {\mu}g/m{\ell}$ solution as iron.

핫프레스포밍 공정에서 내산화 코팅처리가 TWB 용접부 특성에 미치는 영향 (The Effect of Mechanical Property of Tailor Welding Blank and Hot Press Forming Process by the Different Anti-oxidation Coating Treatment on Boron-steel Sheet)

  • 김상권;임옥동;이재훈
    • 열처리공학회지
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    • 제25권6호
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    • pp.283-291
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    • 2012
  • In order to increase the anti-oxidation property during the tailor welding blanked hot press forming process for a high strength boron steel sheet, we performed a different coating method on the boron-steel sheet such as 87% Al - 13% Si and Fe - 8.87 Zn dipping plating procedure. However, during laser welding process, the Al-Si coated steel sheet has showed a low tensile strength and about half value of elongation than the original boron-steel sheet. Aluminum and silicon, elements of coating layer were diffused into the boron-steel matrix and have shown a low strength result than non-coated specimen. On the other hand, Zinc-coated boron-steel has expectedly showed a excellent tensile strength and micro-harness value in the welded area like original boron-steel.

The Effect of Boron Supplementation on Bone Strength in Ovariectomized Rats Fed with Diets Containing Different Calcium Levels

  • Choi, Mi-Kyeong;Kim, Mi-Hyun;Kang, Myung-Hwa
    • Food Science and Biotechnology
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    • 제14권2호
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    • pp.242-248
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    • 2005
  • The effect of calcium and boron supplementation on bone strength was determined in growing and ovariectomized (OVX) Sparague-Dawley rats. Rats were divided into 9 groups and fed diet with different intake levels of calcium and boron for 4 weeks. About fifty percentages of rats in each group were OVX and the others were sham-operated. The rats were fed same diets after operation for 8 weeks. The feed intake, body weight gain, and FER were significantly higher in OVX rats than those in sham-operated ones. Serum osteocalcin, bone formation biomarker, was significantly increased with increment in calcium and boron intakes. Serum estradiol was lower in OVX rats than in sham-operated ones. Bone mineral density of femur was significantly lower in OVX rats than in other group. The breaking forces of bones were not significantly different among the groups. The urinary excretion of deoxypyridinoline, osteolytic marker was significantly increased with increment in calcium intake and ovariectomy. The urinary calcium excretion was significantly increased with increment in calcium intake, but decreased with increment in boron intake. According to theses results, the boron supplementation resulted in higher serum osteocalcin and lower urinary calcium excretion. Therefore, it could be suggested that the boron supplementation may be complementary and useful to calcium nutrition for bone health.

Enhanced Field Emission Behavior from Boron-Doped Double-walled Carbon Nanotubes Synthesized by Catalytic Chemical Vapor Deposition

  • Kang, J.H.;Jang, H.C.;Choi, J.M.;Lyu, S.C.;Sok, J.H.
    • Journal of Magnetics
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    • 제17권1호
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    • pp.9-12
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    • 2012
  • Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

폴리스타이렌을 이용한 그래핀 합성 및 산화 붕소가 그래핀 합성에 미치는 영향 (Synthesis of Graphene Using Polystyrene and the Effect of Boron Oxide on the Synthesis of Graphene)

  • 최진석;안성진
    • 한국재료학회지
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    • 제28권5호
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    • pp.279-285
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    • 2018
  • Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

양란의 붕소 대사에 관한 연구 -특히 세포벽 형성 및 분획 조성에 미치는 영향- (Studies on the Boron Metabolism of Orchid -Influences on the Cell Wall Structure and its Components-)

  • 강영희
    • Journal of Plant Biology
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    • 제22권1_2호
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    • pp.35-43
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    • 1979
  • The present investigation has been made to study the deficiency symptoms of boron on the formation of cell wall and the development of the individual components of the orchid cell wall. Analytical samples were taken from two sources; one from the individual orchid plants started from an apical meristem culture followed by the generation of the protocorm-like body which was developed into a plant, the other from the plant cultivated in water for 30 days. The amount of boron in the cultrues were controlled and the deficiency symptoms were observed under theelectron microscope, optical microscope with samples taken from the zones of elongation of leaves and compared the dry weight of cell walls and finally the various fractions of the cell wall components. The following results were obtained: (1) The growth of roots and leaves was hampered in the boron deficient plants. (2) In the boron-deficient leaves a severe necrosis and cracks were developed in the tissue of zone of elongation besides the decrease in growth. (3) under the electorn microscope the cell walls of boron-deficient plants showed rough undulated structures unlike the smooth control cell walls. (4) the dry weight of total cells and cell walls of boron deficient plants were higher than the control plants. (5) In the boron deficient plant the amout of pectin and hemicellulose isolated from cell walls were higher and the amount of protein was lower than the controlled plots.

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