• Title/Summary/Keyword: bonding design

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Effect of Bonding Process Conditions on the Interfacial Adhesion Energy of Al-Al Direct Bonds (접합 공정 조건이 Al-Al 접합의 계면접착에너지에 미치는 영향)

  • Kim, Jae-Won;Jeong, Myeong-Hyeok;Jang, Eun-Jung;Park, Sung-Cheol;Cakmak, Erkan;Kim, Bi-Oh;Matthias, Thorsten;Kim, Sung-Dong;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.319-325
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    • 2010
  • 3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

Effect of the Tolerance Parameters of the Horn on the Vibration of the Thermosonic Transverse Bonding Flip Chip System (횡 방향 플립 칩 초음파 접합 시 혼의 공차변수가 시스템의 진동에 미치는 영향)

  • Jung, Ha-Kyu;Kwon, Won-Tae;Yoon, Byung-Ok
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.18 no.1
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    • pp.116-121
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    • 2009
  • Thermosonic flip chip bonding is an important technology for the electronic packaging due to its simplicity, cost effectiveness and clean and dry process. Mechanical properties of the horn and the shank, such as the natural frequency and the amplitude, have a great effect on the bonding capability of the transverse flip chip bonding system. In this research, two kinds of study are performed. The first is the new design of the clamp and the second is the effect of tolerance parameters to the performance of the system. The clamp with a bent shape is newly designed to hold the nodal point of the flip chip. The second is the effect of the design parameters on the vibration amplitude and planarity at the end of the shank. The variation of the tolerance parameters changes the amplitude and the frequency of the vibration of the shank. They, in turn, have an effect on the quantity of the plastic deformation of the gold ball bump, which determined the quality of the flip chip bonding. The tolerance parameters that give the great effect on the amplitude of the shank are determined using Taguchi's method. Error of set-up angle, the length and diameter of horn and error of the length of the shank are determined to be the parameters that have peat effect on the amplitude of the system.

Bonding Technologies for Chip to Textile Interconnection (칩-섬유 배선을 위한 본딩 기술)

  • Kang, Min-gyu;Kim, Sungdong
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.4
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    • pp.1-10
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    • 2020
  • This paper reviews the recent development of electronic textile technology, mainly focusing on chip-textile bonding. Before the chip-textile bonding, a circuit on the textile should be prepared to supply the electrical power and signal to the chip mounted on the fabrics. Either embroidery with conductive yarn or screen-printing with the conductive paste can be applied to implement the circuit on the fabrics depending on the circuit density and resolution. Next, chip-textile bonding can be performed. There are two choices for chip-textile bonding: fixed connection methods such as soldering, ACF/NCA, embroidery, crimping, and secondly removable connection methods like a hook, magnet, zipper. Following the chip-textile bonding process, the chip on the textile is generally encapsulated using PDMS to ensure reliability like water-proof.

Finite Element Analysis of an Ultrasonic Horn for Wire Bonding (Wire Bonding Head Horn 설계 및 유한요소해석)

  • Kim, Won-Jong;Hwang, Eun-Ha
    • Journal of the Korean Society of Industry Convergence
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    • v.15 no.4
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    • pp.111-115
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    • 2012
  • Ultrasonic meching technoloy has been developed over recent years for wire bonding.In this study, ultrasonic welding horn is analysed and designed with FEM, then manufactured based on it. The wire bonding mechine has been designed by conical horn model with very easy to come by and is readily accessible. The analysis is carried out by SoldEdge & Ansys software.

Characterization of TLP Bonded of Magnesium AZ31 Alloy using a Nickel Interlayer (Ni 삽입재를 사용한 마그네슘 AZ31 합금의 TLP접합 특성평가)

  • Jin, Yeung Jun
    • Transactions of the Korean Society of Automotive Engineers
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    • v.21 no.4
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    • pp.113-119
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    • 2013
  • The transient liquid phase (TLP) bonding was used to fabricate autogenous joints in a magnesium alloy AZ31 with the aid of a pure Ni interlayer. A $13{\mu}m$ thick pure Ni foil was used in order to form a Mg-Ni eutectic liquid at the joint interface. The interface of reaction and composition profiles were investigated as a function of bonding time using a pressure of 0.16 MPa and a bonding temperature of $515^{\circ}C$. The quality of the joints produced was examined by metallurgical characterization and the joint microstructure developed across the diffusion bonds was related to changes in mechanical properties as a function of the bonding time.

Deformation Properties of Gold Bonding Wire for VLSI Packaging Applications (반도체 패키징용 Gold Bonding Wire의 변형특성 및 해석)

  • Kim K.;Hong S. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2001.05a
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    • pp.250-253
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    • 2001
  • Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

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Development of Aerospace Components Forming Technology using Superplasticity and Diffusion Bonding Characteristic (초소성 및 확산접합을 이용한 우주항공 부품 성형기술 개발)

  • Lee, Ho-Sung;Yoon, Jong-Hoon;Yi, Yeong-Moo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.8 no.3 s.22
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    • pp.51-55
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    • 2005
  • In this paper, a near net shape technology using superplasticity and diffusion bonding characteristics was presented for application to various components of aircraft and missiles. Due to these special characteristics of some aerospace alloys, it is possible to produce complex components to shape very near final dimension with enhanced design freedom, reduced material usage, and overall saving of weight and cost. The high pressure vessel for a space launcher was fabricated with Ti-6Al-4V alloy by superplastic forming and diffusion bonding process and the failure characteristics are compared with conventionally fabricated vessel spin formed and TIG welded. The structural integrity of the superplastic forming and diffusion bonding process was successfully demonstrated.

Study of a Low-Temperature Bonding Process for a Next-Generation Flexible Display Module Using Transverse Ultrasound (횡 초음파를 이용한 차세대 플렉시블 디스플레이 모듈 저온 접합 공정 연구)

  • Ji, Myeong-Gu;Song, Chun-Sam;Kim, Joo-Hyun;Kim, Jong-Hyeong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.4
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    • pp.395-403
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    • 2012
  • This is direct bonding many of the metal bumps between FPCB and HPCB substrate. By using an ultrasonic horn mounted on an ultrasonic bonding machine, it is possible to bond gold pads onto the FPCB and HPCB at room temperature without an adhesive like ACA or NCA and high heat and solder. This ultrasonic bonding technology minimizes damage to the material. The process conditions evaluated for obtaining a greater bonding strength than 0.6 kgf, which is commercially required, were 40 kHz of frequency; 0.6MPa of bonding pressure; and 0.5, 1.0, 1.5, and 2.0 s of bonding time. The peel off test was performed for evaluating bonding strength, which was found to be more than 0.80 kgf.

Development of Flexure Applied Bond head for Die to Wafer Hybrid Bonding (Die to Wafer Hybrid Bonding을 위한 Flexure 적용 Bond head 개발)

  • Jang, Woo Je;Jeong, Yong Jin;Lee, Hakjun
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.171-176
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    • 2021
  • Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

Process Design for Manufacturing 1.5wt%C Ultrahigh Carbon Workroll: Void Closure Behavior and Bonding Strength (1.5wt%C 초고탄소 워크롤 제조를 위한 단조 공정 설계: 기공압착 및 접합강도 분석)

  • Lim, H.C.;Lee, H.;Kim, B.M.;Kang, S.H.
    • Transactions of Materials Processing
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    • v.22 no.5
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    • pp.269-274
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    • 2013
  • Experiments and numerical simulations of the incremental upsetting test were carried out to investigate void closure behavior and mechanical characteristic of a 1.5wt%C ultra-high carbon steel. The experimental results showed that the voids become quickly smaller as the reduction ratio increases. The simulation results confirmed this behavior and indicated that the voids were completely closed at a reduction ratio of about 40~45% during incremental upsetting. After the completion of the incremental upsetting tests, the process of diffusion bonding was employed to heal the closed voids in the deformed specimens. To check the appropriate temperature for diffusion bonding, deformed specimens were kept at 800, 900, 1000 and $1100^{\circ}C$ for an hour. In order to investigate the effect of holding time for diffusion bonding at $1100^{\circ}C$, specimens were kept at 10, 20, 30, 40, 50 and 60minutes in the furnace. A distinction between closed and healed voids was clearly established using microstructural observations. In addition, subsequent tensile tests demonstrated that complete healing of a closed void was achieved for diffusion bonding temperatures in the range $900{\sim}1100^{\circ}C$ with a holding time larger than 1 hour.