• Journal of the Korean Wood Science and Technology
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• v.17 no.1
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• pp.3-11
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• 1989

This study was carried out to investigate the physical and mechanical properties. durability of adhesive bond and paint film for the basic data which were required to determine the suitability as a raw material for furniture the laminated veneer lumber (LVL) with pitch pine (Pinus rigida Mill). The results obtained were as follows; 1) The proper pressing time for making the LVL was over 45 second per milimeter of LVL thickness. 2) The bending strength of the LVL was lower than that of the solid wood but the compressive strength of the LVL was similar to that of the solid wood. The strength increased with the decrease of veneer thickness. 3) The impact bending absorbed energy of the LVL was 0 to 0.3 kg.m/$cm^2$ in the direction of parallel to the grain. The energy of the LVL was lower than that of the solid wood (0.68 kg.m/$cm^2$). 4) In warm water soaking and cold-dry tests, delamination of adhered layers surface crack, swelling, and color change were not found when the hot pressing time was over 45 second per milimeter of LVL thickness. As a result of soak under vacuum test shrinkage in the direction of parallel to the grain was about -1.0 percent and. was about 3.0 percent in the direction of the perpendicular to the grain. 6) The film cacks on the LVL's surface after the wet and cold-dry test were not found at all. 7) In the use of the LVL for interior decoration it was considered that the surface of the LVL be overlaid crossly with fancy veneers of birch and paulownia, etc. This cross overlayirg methods have resulted in few cracks on the fancy veneer.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.427-430
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• 2001

We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.