• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.103-106
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• 2007

We have investigated the optical and electrical properties of surface mounted white light emitting diode (LED) chips prepared by using yellow phosphors on the blue LED chip. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ratio of epoxy:yellow phosphor = 97:3 wt%. The maximum luminance and light emitting efficiency are above $80,000cd/m^2$ and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The current of the white LED chip is about 30 mA at 2.9 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.438-440
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• 2005

At present, characteristic of high color reproduction for LCD TV is needed in Display market according to start mass production of LCD TV. Therefore development target for LCD is focused on improvement of color reproduction. The improving methods of high color reproduction are alteration of color Filter or Red, Green, Blue phosphor alteration of CCFL. But decrease of luminance and panel transmittance is caused by alteration of Color Filter. Accordingly, we completed LCD with high color reproduction by the most suitable emission spectrum of CCFL phosphor at panel with conventional color filter. In this experiment, we knew that LCD applied to CCFL with high color rendering characteristic had color reproduction range of 81% compared with NTSC in CIE color coordinate. According to increase of intensity peak and alteration of Red, Green, Blue phosphor spectrum, we made LCD with high color reproduction characteristic. In conclusion we achieved improvement of color reproduction ratio by alteration of CCFL phosphor without changing color filter.

• Journal of the Optical Society of Korea
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• v.11 no.2
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• pp.67-70
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• 2007

A Wide Color Gamut Backlight system was studied using a three-band white Light-Emitting Diode. A three-band white light-emitting diode (LED) was fabricated using an InGaN-based blue LED chip that emits 445-nm blue peak, and a green phosphor and red phosphor that emit 535-nm green and 621-nm red peak emissions, respectively, when excited by 450-nm blue light. Using for this three-band white LED, wide color gamut backlight unit (BLU) was attained. The luminance of BLU and CIE 1931 chromaticity coordinates was $1,700Cd/m^2$ and (0.337, 0.346). Color filter matching simulations for this configuration show that the three-band white LED backlight can be enhanced by up to 16% over conventional white LED backlight color gamut.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.494-499
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• 2023

In this paper, in order to apply the CF (color filter) type of the micro light emitting device (Micro LED) display method, a study on the manufacturing process of red and green phosphor inks for the inkjet process was conducted. The blue light-emitting KSF and LuAG phosphors were respectively used to control the phosphor particle size to about 1㎛, and a phosphor ink was prepared by synthesizing with a low-viscosity solution (IPA/Eg). A chemical dispersion method was applied to selectively control the dispersion characteristics in the manufacture of phosphor inks, and in particular, phosphor inks with a dispersant applied a dispersant secured stable dispersion characteristic compared to phosphor inks without a dispersion process. Therefore, it seems possible to manufacture CF for Micro LED through an inkjet process capable of controlling the dispersion characteristics of phosphor ink.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.164-170
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• 2012

The dependance of degradation on the blue-peak wavelength is investigated with the blue light-emitting diode (LED) of InGaN/GaN with respect to the optical and the electrical characteristics of the devices. The LED devices emitting the blue-peak wavelength ranging from 437 nm to 452 nm is prepared to be stressed for a long aging time with three different currents of 60 mA, 75 mA and 90 mA, respectively. The degradation of optical intensity is observed with and without phosphor in the devices. The device without phosphor has been degraded significantly as the wavelength of blue-peak is decreased while the optical intensity of LED device with phosphor become less sensitive than that of device without phosphor. The electrical property does not depend on the emission peak wavelength. However, the series-resistance of LED device is slowly increased as the aging time is increased. The deformation of device is observed severely the short wavelength of blue-peak even with the same current since the short wavelength is absorbed substantially at the materials of device during the aging time. Consequently, in order to enhance the lifetime of LED devices, it is important to understand the optical degradation property of the materials against the specific wavelengths emitted from the blue chip.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.32-35
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• 2006

For the white UV-LED applications, $Eu^{2+}$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue. green or blue-green light depending on the starting materials for synthesis. In addition, the structure was also changed when the different starting materials were used. When CaO and $CaCO_3$ was used as a starting material. tetragonal $Ca_2Al_2SiO_7$ was formed and blue-green and pure green light was emitted. respectively. However. in the case of $CaSiO_3$, triclinic $CaAl_2Si2O_8$ was formed and only pure blue emission was detected. The maximum emission intensity was obtained from $CaAl_2Si_2O_8:Eu^{2+}$ phosphors, which intensity was about 1.4 times higher than that of YAG:$Ce^{3+}$ phosphor used for blue LED.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.558-563
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• 2000

$Y_2SiO_5:Ce$ phosphor was coated with $In_2O_3$, $Al_2O_3$ and $SiO_2$ and then their cathodoluminance(CL)proper-ties required in field emission display were investigated. It was found that luminance efficiency and aging p개perty of $Y_2SiO_5:Ce$ phosphor was decreased with $In_2O_3$coating. For the case of coating, the luminance intensity was in blue phosphor was dramatically increased with $SiO_2$ coating. And also the aging property of $Y_2SiO_5:Ce$ Phosphor coated with $SiO_2$ was significantly improved compared to non-coated sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.968-971
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• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.