• Title/Summary/Keyword: biological process

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Reviews on Adsorption and Catalyst Technology for Removal of Hazardous Substances from Semiconductor Process (반도체 공정에서 발생하는 유해물질 제거를 위한 흡착 및 촉매 공정에 대한 고찰)

  • Yoon, Seong-Jin;Kim, Yu-Jin;Kang, Yu-Jin;Jang, Min-Hyeok;Jo, Hyung-Kun;Han, Gyoung-Jae;Seo, Dong-Jin;Cho, Hye-Ryeong;Park, Joo-Il
    • Journal of the Korea Organic Resources Recycling Association
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    • v.30 no.4
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    • pp.51-57
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    • 2022
  • This paper investigated catalytic and adsorption equations among the technologies for removing hazardous substances generated in the semiconductor process. As the semiconductor industry develops, harmful substances used and discharged in the semiconductor process are also increasing. Hazardous substances adversely affect the global environment in terms of atmospheric and water quality. As regulations on the emission of harmful substances are strengthened in the 21st century, it is expected that there will be limitations in industrial development in the future. Therefore, technology for removing harmful substances generated in semiconductor processes is essential. In this paper, the goal is to remove PFCs, which are harmful substances, through adsorption technology and catalyst technology. Descriptions from the semiconductor process to the technology in which harmful substances generated are removed were summarized.

Stability analysis of a three-layer film casting process

  • Lee, Joo-Sung;Shin, Dong-Myeong;Jung, Hyun-Wook;Hyun, Jae-Chun
    • Korea-Australia Rheology Journal
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    • v.19 no.1
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    • pp.27-33
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    • 2007
  • The co-extrusion of multi-layer films has been studied with the focus on its process stability. As in the single-layer film casting process, the productivity of the industrially important multi-layer film casting and the quality of thus produced films have often been hampered by various instabilities occurring in the process including draw resonance, a supercritical Hopfbifurcation instability, frequently encountered when the draw ratio is raised beyond a certain critical value. In this study, this draw resonance instability along with the neck-in of the film width has been investigated for a three-layer film casting using a varying width non-isothermal 1-D model of the system with Phan-Thien and Tanner (PTT) constitutive equation known for its robustness in portraying extensional deformation processes. The effects of various process conditions, e.g., the aspect ratio, the thickness ratio of the individual film layers, and cooling of the process, on the stability have been examined through the nonlinear stability analysis.

Analysis on Thermal Effects of Process Channel Geometry for Microchannel Fischer-Tropsch Reactor Using Computational Fluid Dynamics (전산유체역학을 이용한 Fischer-Tropsch 마이크로채널 반응기 반응채널구조에 따른 열적 효과 분석)

  • Lee, Yongkyu;Jung, Ikhwan;Na, Jonggeol;Park, Seongho;Kshetrimayum, Krishnadash S.;Han, Chonghun
    • Korean Chemical Engineering Research
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    • v.53 no.6
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    • pp.818-823
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    • 2015
  • In this study, FT reaction in a microchannel was simulated using computational fluid dynamics(CFD), and sensitivity analyses conducted to see effects of channel geometry variables, namely, process channel width, height, gap between process channel and cooling channel, and gap between process channels on the channel temperature profile. Microchannel reactor considered in the study is composed of five reaction channels with height and width ranging from 0.5 mm to 5.0 mm. Cooling surfaces is assumed to be in isothermal condition to account for the heat exchange between the surface and process channels. A gas mixture of $H_2$ and CO($H_2/CO$ molar ratio = 2) is used as a reactant and operating conditions are the following: GHSV(gas hourly space velocity) = $10000h^{-1}$, pressure = 20 bar, and temperature = 483 K. From the simulation study, it was confirmed that heat removal in an FT microchannel reactor is affected channel geometry variables. Of the channel geometry variables considered, channel height and width have significant effect on the channel temperature profile. However, gap between cooling surface and process channel, and gap between process channels have little effect. Maximum temperature in the reaction channel was found to be proportional to channel height, and not affected by the width over a particular channel width size. Therefore, microchannels with smaller channel height(about less than 2 mm) and bigger channel width (about more than 4 mm), can be attractive design for better heat removal and higher production.

Role of Diazotrophic Bacteria in Biological Nitrogen Fixation and Plant Growth Improvement

  • Shin, Wansik;Islam, Rashedul;Benson, Abitha;Joe, Manoharan Melvin;Kim, Kiyoon;Gopal, Selvakumar;Samaddar, Sandipan;Banerjee, Somak;Sa, Tongmin
    • Korean Journal of Soil Science and Fertilizer
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    • v.49 no.1
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    • pp.17-29
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    • 2016
  • Though there is an abundant supply of nitrogen in the atmosphere, it cannot be used directly by the biological systems since it has to be combined with the element hydrogen before their incorporation. This process of nitrogen fixation ($N_2$-fixation) may be accomplished either chemically or biologically. Between the two elements, biological nitrogen fixation (BNF) is a microbiological process that converts atmospheric di-nitrogen ($N_2$) into plant-usable form. In this review, the genetics and mechanism of nitrogen fixation including genes responsible for it, their types and role in BNF are discussed in detail. Nitrogen fixation in the different agricultural systems using different methods is discussed to understand the actual rather than the potential $N_2$-fixation procedure. The mechanism by which the diazotrophic bacteria improve plant growth apart from nitrogen fixation such as inhibition of plant ethylene synthesis, improvement of nutrient uptake, stress tolerance enhancement, solubilization of inorganic phosphate and mineralization of organic phosphate is also discussed. Role of diazotrophic bacteria in the enhancement of nitrogen fixation is also dealt with suitable examples. This mini review attempts to address the importance of diazotrophic bacteria in nitrogen fixation and plant growth improvement.

Maternal-Conceptus Interactions: Mediators Regulating the Implantation Process in Pigs

  • Choi, Yohan;Seo, Heewon;Yoo, Inkyu;Han, Jisoo;Jang, Hwanhee;Kim, Minjeong;Ka, Hakhyun
    • Reproductive and Developmental Biology
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    • v.38 no.1
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    • pp.9-19
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    • 2014
  • For successful embryo implantation, the communication of the maternal endometrium with the conceptus trophectoderm is required essentially. In pigs, conceptuses undergo morphological change in length to enlarge the physical contact area with the maternal endometrium and secrete estrogen to induce the maternal recognition of pregnancy during the peri-implantation period. Conceptus-derived estrogen prevents luteolysis by conversion in direction of $PGF_{2{\alpha}}$ secretion from the uterine vasculature to the uterine lumen as well as it affects on expression of the uterine endometrial genes. In addition to estrogen, conceptuses release various signaling molecules, including cytokines, growth factors, and proteases, and, in response to these signaling molecules, the maternal uterine endometrium also synthesizes many signaling molecules, including hormones, cytokines, growth factors, lipid molecules, and utilizes ions such as calcium ion by calcium regulatory molecules. These reciprocal interactions of the conceptus trophectoderm with the maternal uterine endometrium make development and successful implantation of embryos possible. Thus, signaling molecules at the maternal-conceptus interface may play an important role in the implantation process. This review summarized syntheses and functions of signaling molecules at the maternal-conceptus interface to further understand mechanisms of the embryo implantation process in pigs.

Study of the Diffusion of Phosphorus Dependent on Temperatures for Selective Emitter Doping Process of Atmospheric Pressure Plasma (대기압 플라즈마의 선택적 도핑 공정에서 온도에 의한 인(Phosphorus)의 확산연구)

  • Kim, Sang Hun;Yun, Myoung Soo;Park, Jong In;Koo, Je Huan;Kim, In Tae;Choi, Eun Ha;Cho, Guangsup;Kwon, Gi-Chung
    • Journal of the Korean institute of surface engineering
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    • v.47 no.5
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    • pp.227-232
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    • 2014
  • In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.