• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.2
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• pp.63-69
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• 2018

In this paper, the operation principle of a bi-directional switch type resonant AC link snubber circuit was described, together with the practical design procedure, which employs in the proposed power module bridge package type resonant AC link snubber. The novel prototype of power module bridge package type resonant AC link snubber-assisted voltage type sinewave soft switching PWM inverter using IGBT power module was demonstrated herein. It was verified that both the auxiliary power switches in this resonant AC link snubber circuit and the main power switches commutate under the condition of soft switching commutation principle. In addition, the power losses of the new soft switching inverter treated here were analyzed by implementing the experimental data of the IGBT and diode v-i characteristics in addition to switching power loss characteristics into our original computer simulation software developed by the authors. Then, the voltage type sinewave soft switching PWM inverter was high efficiency than that of hard switching PWM inverter, along with performance operation waveforms. In the future, the comparative feasibility study of power module bridge type resonant AC link snubber and its related soft switching inverter in addition to the other types resonant snubber assisted soft switching inverter should be done from a practical point of view.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.386-386
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• 2012

We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

• Journal of Power Electronics
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• v.7 no.4
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• pp.343-352
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• 2007

This paper proposes a modularized charge equalization converter for hybrid electric vehicle (HEV) lithium-ion battery cells, in which the intra-module and the inter-module equalizer are Implemented. Considering the high voltage HEV battery pack, over approximately 300V, the proposed equalization circuit modularizes the entire $M^*N$ cells; in other words, M modules in the string and N cells in each module. With this modularization, low voltage stress on all the electronic devices, below roughly 64V, can be obtained. In the intra-module equalization, a current-fed DC/DC converter with cell selection switches is employed. By conducting these selection switches, concentrated charging of the specific under charged cells can be performed. On the other hand, the inter-module equalizer makes use of a voltage-fed DC/DC converter for bi-directional equalization. In the proposed circuit, these two converters can share the MOSFET switch so that low cost and small size can be achieved. In addition, the absence of any additional reset circuitry in the inter-module equalizer allows for further size reduction, concurrently conducting the multiple cell selection switches allows for shorter equalization time, and employing the optimal power rating design rule allows fur high power density to be obtained. Experimental results of an implemented prototype show that the proposed equalization scheme has the promised cell balancing performance for the 7Ah HEV lithium-ion battery string while maintaining low voltage stress, low cost, small size, and short equalization time.