• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권3호
• /
• pp.131-135
• /
• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.

• 한국진공학회지
• /
• 제9권1호
• /
• pp.16-23
• /
• 2000

The epitaxial growth of $CeO_2$ films has been investigated on three different substrates-Si(111), $SrTiO_3$(001), and MgO(001)-over wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. Pure-phase, single-crystalline epitaxial films of $CeO_2$ (001) have been grown only on $SrTiO_3$(001). We discuss the growth conditions in conjunction with the choice of substrates required to synthe-size this oxide, as well as the associated characterization by menas of x-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, and x-ray photoelectron spectroscopy and diffraction. Successful growth of single crystalline $CeO_2$ depends critically on the choice of substrate and is rather insensitive to the growth conditions studied in this investigation. $CeO_2$(001) films on $SrTiO_3$exhibit the sturcture of bulk $CeO_2$ without surface reconstructions. Ti outdiffusion is observed on the films grown temperatures above $650^{\circ}C$.

• 한국재료학회지
• /
• 제22권4호
• /
• pp.185-189
• /
• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제36회 동계학술대회 초록집
• /
• pp.66-66
• /
• 2009

• 한국진공학회지
• /
• 제19권5호
• /
• pp.365-370
• /
• 2010

분자선 에피택시 방법을 이용하여 GaAs 기판 위에 GaAs 및 AlGaAs 에피층을 성장하면서 성장 멈춤 효과를 연구하였다. 성장 멈춤 시간에 따른 에피층 성장 과정은 반사 고에너지 전자회절로 측정하였다. 성장 멈춤 시간은 0, 15, 30, 60초로 하였다. 그리고 성장 멈춤 시간을 달리하여 GaAs/$Al_{0.3}Ga_{0.7}As$ 다양자우물을 성장한 후 양자우물의 특성을 조사하였다. 반사 고에너지 전자회절의 강도 진동은 성장 멈춤 시간에 영향을 받고 있었다. 그리고 양자우물의 광특성도 성장 멈춤 시간에 의존하고 있었다. 성장 멈춤 시간이 30초일 때 우물과 장벽층 사이에 급준한 계면을 가지는 에피층을 얻을 수 있었다.

• 한국축산식품학회지
• /
• 제18권3호
• /
• pp.232-239
• /
• 1998

This experiment was conducted to investigate radurization effects of gamma ray and electron beam irradiation at 1.5 and 3.0 kGy on beef steaks during 8 days of storage at 5$^{\circ}C$. Total bacteria count, psychrotrophs, mesophiles and thermophiles were analyzed at 2 days intervals. Nonirradiated beef steak was used a scontrol Total bacteria counts, psychrotrophs, mesophiles and thermophiles of the control samples showed 3.03∼4.72 logCFU / g at 0 day and increased to 7.67∼10.90 logCFU / g during 8 days storage except thermophiles. Total bacteria counts, psychrotrophs and mesophiles of beef steaks at 8 days were significantly (p＜0.05) decreased to 3.61∼5.43 logCFU / g by gamma ray and to 3.83∼7.02 logCFU / g by electron beam irradiation at 1.5 and 3.0 kGy. Thermophiles of all irradiated samples at any dose were not detectable through 8 days storage. These results suggested that both gamma ray and electron beam irradiation were effective to extend lag phase of bacterial growth of refrigerated beef. Gamma ray irradiation was better than electron beam irradiation in terms of radurization effects of beef.

• 한국결정학회지
• /
• 제3권2호
• /
• pp.85-97
• /
• 1992

EBFZM( Electron Beam Floating Zone Melting) 법을 이용하여 몰리브덴에서의 금속계 불순물과 침입형 불순물의 정련기구 및 단결정 성장기구를 연구하 였다. Fe, Cr, Co등의 금속계 불순물은 몰리브덴과의 평형증기압의 차이에 따른 불순물의 선택적 증발에 의하여 우수한 정련효과를 나타내며, 몰리브덴보다 응점이 높은 Ta, W는 잘 제거되지 않았다. 한편 대역 정제에 의한 정련효과는 미약함을 확인하였다. EBF ZM은 C,0,N등의 침입형 불순물의 정련에도 효과적 이었다. 본 연구의 모든 조건에서 몰리브덴은 단결정으로 성장하였으며 2차 재결정 epitaxy에 의한 단결 정 성장기구가 제시되었다. 몰리브덴 단결정 내의 전 위밀도는 strain-anneal법에 의한 단결정의 경우보다 높았으며,본 실험의 열처리 조건에서는 변화하지 않았다. The purification and single crystal growth mechanisms of molybdenum were analysed in EBFZM ( electron beam floating zone melting). Metallic impurities of Fe, Cr, Co were purified efficiently but Ta and W were not removed well in this study. It was due to a preferential evaporation of the elements caused by the difference in equillibrium vapor pressure between the elements and molybdenum. The pu- rification effect by zone refining was not significant. The EBFZM also refined the interstitial impurities of C, 0 and N, effectively. The single crystals of molybdenum were grown regardless of the experimental conditions and the secondary recrystallization epitaxy was surge sled as a growth mechanism. The dislocation density in single crystal was higher than that by strain-anneal method, and was not reduced by heat treatments.

• 한국결정성장학회지
• /
• 제9권1호
• /
• pp.1-5
• /
• 1999

Molecular beam epitaxy법으로 $CaF_{2}$ (111) 기판위에 희토류 이온 ($(Nd^{3+},\;Er^{3+})$) 첨가 $CaF_{2}$ 박막을 성장하였다. 첨가농도와 박막두께에 따른 희토류 첨가 $CaF_{2}$ 박막의 표면구조와 결정성을 RHEED로 검토하였다. 반도체 관련 고집적회로구조에 있어서의 완층막으로서의 응용을 고려하여, 희토류첨가 $CaF_{2}$ 박막과 $CaF_{2}$ (111) 기판과의 격자부정합의 변이를 X-ray rocking Curve 분석에 의해 검토하였다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2001년도 추계학술대회(한국공작기계학회)
• /
• pp.298-303
• /
• 2001

Most of mechanical failures are caused by repeated loadings and therefore they are strongly related to fatigue. To avoid the failures caused by fatigue, determination of an optimal shape of a structure is one of the very important factors in the initial design stage. Shape optimization for a compact tension specimen in opening mode in fracture mechanics, was accomplished by the linear elastic fracture mechanics and the growth-strain method in this study. Also shape optimization for a cantilever beam in mixed mode was carried out by the same techniques. The linear elastic fracture mechanics was used to estimate stress intensity factors and fatigue lives. And the growth-strain method was used to optimize the shape of the initial shape of the specimens. From the results of the shape optimization, it was found that shapes of two types of specimens and a cantilever beam optimized by the growth-strain method prolong their fatigue lives very much. Therefore, it was verified that the growth-strain method is an appropriate technique for shape optimization of a structure having a crack.

• Computers and Concrete
• /
• 제4권2호
• /
• pp.83-100
• /
• 2007

Applying a direct formulation for the enrichment of the displacement field an extended finite element (XFEM) scheme for modeling of cohesive crack growth is developed. Only elements cut by the crack is enriched and the scheme fits within the framework of standard FEM code. The scheme is implemented for the 3-node constant strain triangle (CST) and the 6-node linear strain triangle (LST). Modeling of standard concrete test cases such as fracture in the notched three point beam bending test (TPBT) and in the four point shear beam test (FPSB) illustrates the performance. The XFEM results show good agreement with results obtained by applying standard interface elements in FEM and with experimental results. In conjunction with criteria for crack growth local versus nonlocal computation of the crack growth direction is discussed.