• Title/Summary/Keyword: band-ratio

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Detection of Phase Error Due to the Doppler Effect in Low Earth Orbit Mobile Satellite Communication Network in the Presence of Interference and Rician Fading (간섭과 Rician 페이딩이 존재하는 저궤도 이동 위성 통신망에서 도플러 효과에 따르는 위상 에러의 검출)

  • 조훈주;김영철;강희조
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.7 no.1
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    • pp.71-82
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    • 1996
  • In this paper, the Doppler phase error due to the relative velocity between a satellite and the earth station in communications using a low earth orbit mobile satellite is detected. The performance of BPSK system in the presence of Rician fading with Doppler phase error and interference, noise is compared with that of the system disturbed by Doppler phase error and noise only. The expression of error rate performance of BPSK system is derived as the type of complementary error function. The numerical calculation of the induced equation are performed in terms of satellite-height, orbit-eccentricity, the velocity of the earth, Rician fading parameter, signal to interference rateio (SIR), the ratio of carrier frequency and base band bit rate. The main conclusion that can be drawn from this analysis is that Rician fading channel environment with Doppler phase error and interference effect yields severe performance degradation than Do- ppler phase error and noise effect in satellite communication channel. And using the numerical calculation, we give a quantitative insight how much the satellite communication channel parameters degrade the system performance. Furthermore it is shown that an appropriate transmission power control for the performance enhancement is beneficial to the new satellite communication system planning.

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Research on an Equivalent Antenna Model for Induced Human Body Current by RFID Equipments (RFID 장비에 의한 인체 유도 전류의 등가 안테나 모형 연구)

  • Lee, Jong-Gun;Byun, Jin-Kyu;Choi, Hyung-Do;Cheon, Chang-Yul;Lee, Byung-Je;Chung, Young-Seek
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.7
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    • pp.727-732
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    • 2008
  • Recently, according to the increase of using the microwave equipments, the interests in effects on human body have been also increased. For example, there have been many researches on making the standard the specific absorbing ratio (SAR) caused by mobile phones. However, it is needed to study on the induced current on human body caused by HF(Hight Frequency) band which can deeply penetrate the human body. Especially, since the RFID systems are applied to the transportation card and the library, it is hooded to research on the effect on human body exposed to the radiated power from the RFID system. In this paper, we designed a cylindrical monopole antenna model of human body exposed to 13.56 MHz RFID system, which can model the induced current on human body. To verify the proposed equivalent antenna model, we compared the induced currents between human body and the equivalent antenna model.

Synthesis and Characterization of Power Conversion Efficiency of D/A Structure Conjugated Polymer Based on Benzothiadiazole-Benzodithiophene (Benzothiadiazole-benzodithiophene을 기반으로 한 D/A구조의 공액 고분자 합성 및 광전변환 효율 특성 개선 연구)

  • Seong, Ki-Ho;Yun, Dae-Hee;Woo, Je-Wan
    • Applied Chemistry for Engineering
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    • v.24 no.5
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    • pp.537-543
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    • 2013
  • In this study, the push-pull structure polymer for organic photo voHaics (OPVs) was synthesized and characterized. The poly{4,8-didodecyloxybenzo[1,2-b;3,4-b]dithiophene-alt-5,6-bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]-thiadiazole} (PDBDT-TBTD) was synthesized by Stille coupling reaction using the benzothiadiazole (BTD) derivative as an electron acceptor and benzodithiophene (BDT) derivative as an electron donor. The structure of monomers and polymers was identified by $^1H-NMR$ and GC-MS. The optical, physical and electrochemical properties of the conjugated polymer were identified by GPC, TGA, UV-Vis and cyclic voltammetry. The number average molecular weight ($M_n$) and initial decomposition temperature (5% weight loss temperature, $T_d$) of PDBDT-TBTD were 6200 and $323^{\circ}C$, respectively. The absorption maxima on the film was about 599 nm and the optical band gap was about 1.70 eV. The structure of device was ITO/PEDOT : PSS/PDBDT-TBTD : $PC_{71}BM/BaF_2/Ba/Al$. PDBDT-TBTD and $PC_{71}BM$ were blended with the weight ratio of 1:2 which were then used as an optical active layer. The power conversion efficiency (PCE) of fabricated device was measured by solar simulator and the best PCE was 2.1%.

Gelation of Rapeseed Protein Induced with Microbial Transglutaminase (미생물성 Transglutaminase에 의한 유채단백질의 겔화)

  • Hyun, Eun-Hee;Kang, Yeung-Joo
    • Korean Journal of Food Science and Technology
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    • v.31 no.5
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    • pp.1262-1267
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    • 1999
  • Optimum reaction conditions for gel formation of rapeseed, Brassica napus, protein catalyzed by microbial TGase(transglutaminase) were evaluated by measuring breaking strength and deformation of gel. The polymerization of the protein gel was ascertained by SDS-PAGE and content of GL crosslinking$[{\varepsilon}-({\gamma}-glutamyl)lysine]$. In the reaction between rapeseed protein and TGase at $45^{\circ}C$ for 60 min, the breaking strength and deformation of the gel was the maximum at the ratio of 1 : 40 of enzyme to substrate. 10%(w/v) of rapeseed protein concentrate was optimum for gel production. The maximum breaking strength and deformation was shown at $45^{\circ}C$ The breaking strength increased linearly up to 90 min of the reaction time and remained unchanged. The breaking strength and deformation by TGase treatment was pH dependent and pH 7 was optimum for 10% rapeseed protein solution. SDS-PAGE analysis indicated that new band of highmolecular polymers were formed by the enzyme reaction, with disappearing the original bands of rapeseed protein. According to HPLC analysis. the content of GL crosslinking was increased from 0 to $7.14\;{\mu}mol/g$ gel for 90 min of the reaction time.

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Characteristics of Beam-tilting Slot Array Waveguide Antennas for DBS Reception (DBS 수신용 빔 틸트형 슬롯 어레이 도파관 안테나의 특성)

  • Min, Gyeong-Sik;Kim, Dong-Cheol;Arai, Hiroyuki
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.3
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    • pp.140-149
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    • 2002
  • This paper describes the characteristics of beam-tilting slot away waveguide antennas for mobile DBS reception. As a basic study of slotted waveguide array, design for 16 slot elements located on a broad-wall waveguide is considered. Design parameters such as slot length, space between each slot and cross slot angle of antennas with the beam-tilting characteristics are calculated by method of moments. Based on these results, the radiation waveguide antennas with 16-element $\times$16-array are designed and fabricated. The measured main beam direction angles of the fabricated antennas are 48$^{\circ}$to 50$^{\circ}$depending on the measured frequencies and it shows good agreement with prediction. The measured 3 dB beam width of elevation pattern is about 13$^{\circ}$, and the axial ratio and the gain measured at DBS band are observed 2.8 dB below and 24 dBi above, respectively. In order to evaluate a performance of the fabricated waveguide planar antenna, it is combined with the satellite tracking control system and the field performance test of antenna mounted on a mobile vehicle is carried out at highway. During the measurement, it was possible to watch television without a break signal in a driving vehicle and an excellent performance of the proposed antennas was demonstrated.

Investigation of field emission mechanism of undoped polyucrystalline diamond films

  • Shim, Jae-Yeob;Chi, Eung-Joon;Song, Kie-Moon;Baik, Hong-Koo
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.62-62
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    • 1999
  • Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

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Design of an Offset Interdigital Filter Based on Multi-Port EM Simulated Y-Parameters (EM 시뮬레이션 기반 다중 포트 Y-파라미터를 이용한 변위된 인터디지털 여파기 설계)

  • Lee, Seok-Jeong;Oh, Hyun-Seok;Jeong, Hae-Chang;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.7
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    • pp.694-704
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    • 2011
  • In this paper, we present a design of a 5th order Chebyshev interdigital band-pass filter using inverter and susceptance slope parameter values obtained from EM simulated multi-port Y-parameters. The shifted length of the resonator is determined when the frequency of the transmission zero is separated far away from the center frequency. For the initial dimensions of the interdigital filter, the filter is decomposed into the individual resonators, and the dimensions are obtained using EM Simulation of the decomposed resonators. However, the interdigital filter with the dimensions determined from the EM simulation of the decomposed resonators shows slightly distorted response from the desired frequency response due to the coupling between non-adjacent resonators. To obtain a EM simulation dataset, EM simulation for this filter is carried out by parameter sweep with constant ratio for the initial values. In this dataset, it is determined the final values for the filter by optimization. The fabricated filter by PCB shows an upper-shift of center frequency of about 70 MHz, which was caused by permittivity changed and tolerance of fabrication.

Impedance-matching Method Improving the Performance of the SAW Filter (탄성표면파 필터의 성능 개선을 위한 임피던스 정합의 해석적 방법)

  • 이영진;이승희;노용래
    • The Journal of the Acoustical Society of Korea
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    • v.20 no.5
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    • pp.69-75
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    • 2001
  • In this paper, a fast and easy impedance matching method, which could give the impedance matching component for the general 1 or 2-port network was introduced. First, the entire network structure was defined which consists of the network part to be matched and the impedance matching part composed of inductors and capacitors. Next, the transmission matrix and input and output impedances of the entire network from the terminal impedance conditions were calculated, then the exact solutions for the matching components were obtained. To verify the efficiency of this method, this method was applied to the CDMA If band withdrawal weighted SAW transversal filter, and investigated the effects of the impedance matching before and after, through the simulation and experiment. As the result, the performance of a fractional bandwidth of 1.2%, insertion loss of 29 dB, and VSWR of 80 have improved to a factional bandwidth of 1.8%, insertion loss of 9 dB, VSWR of 3 at 85.38 MHz center frequency. The result shows that this impedance matching method could be used in the SAW devices and other types of 1 or 2-port network.

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Effect of Ga-doping on the properties of ZnO films grown on glass substrate at room temperature by radio frequency magnetron sputtering (RF 마그네트론 스퍼터링 방법으로 상온에서 유리기판 위에 성장시킨 ZnO의 성질에 미치는 Ga 도핑 효과)

  • Kim, G.C.;Lee, J.S.;Lee, S.K.;Kim, D.H.;Lee, S.H.;Moon, J.H.;Jeon, M.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.40-45
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    • 2008
  • We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

Annealed effect on the Optical and Electrical characteristic of a-IGZO thin films transistor.

  • Kim, Jong-U;Choe, Won-Guk;Ju, Byeong-Gwon;Lee, Jeon-Guk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.53.2-53.2
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    • 2010
  • 지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

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