• Proceedings of the KIEE Conference
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• 2004.05b
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• pp.136-139
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• 2004

It is widely known that the ultra high frequency (UHF) method that detects the electromagnetic wave of the PD pulses in the gas insulated space is one of the most competitive methods for its high sensitivity. From the above point of view, this paper describes the propagation characteristics of GIS PD signals measured with ultra wide band (UWB) GIS PD detecting system in which PD signals are detected into the dual UHF band. The UWB PD detection system consists of the UWB UHF coupler, the UWB low noise amplifier (LNA) and the oscilloscope. The dual bands for PD signals are 0.5-2GHz(full band) and 1-2GHz(high band). As results, propagation characteristics of GIS PD signals were measured in the mock-up GIS bus and it was found that the propagation characteristics of the high band showed a better result in accordance with the infernal configuration of the GIS bus than those of the full band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.1
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• pp.110-114
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• 2008

In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.562-568
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• 2013

This paper presents a design of a wireless power transfer system based on magnetic resonant coupling technology with in-band wireless communication. To increase the transmission distance and compensate for the change in the effective capacitance due to the varying distance, the proposed system used a loop antenna with a selectable capacitor array. Because the increased transmission distance enables multiple charging, we added a communication protocol operated at the same frequency band to manage a network and control power circuits. In order to achieve the efficient bandwidth in both power transfer mode and communication mode, the S-parameters of the loop antennas are adjusted by switching a series resistor. Our test results showed that the loop antenna achieved a high Q factor in power transfer mode and enough passband in communication mode.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.194-200
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• 2001

In this study, the optical properties of diamond-like carbon(DLC) films, which was synthesized by 13.56 MHz rf plasma enhanced chemical vapor deposition system(PECVD), were investigated. We observed the variation of the transmittance and optical band gap with respect to deposition condition. The change of the transmittance and optical band gap of the DLC films were investigated as a function of RF power, working pressure, and additional gas. The optical band gap decreased with the increase of RF power and working pressure. We could verify the bond structures change of DLC films by observing the content of hydrogen using FT-IR spectroscopy. And the addition of hydrogen and nitrogen decreased the optical band gap by the breakage of C-H bond of DLC films during the deposition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1065-1072
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• 2012

In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.7-12
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• 2008

In this paper, a highly efficiency power amplifier is presented for multi-band antenna system. The class F power amplifier operating in dual-band designed with one LDMOSFET. An operating frequency of power amplifier is 900 MHz and 2.14 GHz respectively Matching networks and harmonic control circuits of amplifier are designed by using the unit cell of composite right/left-handed(CRLH) transmission line(TL) realized with lumped elements. The CRLH TL can lead to metamaterial transmission line with the dual-band holing capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of all harmonic components for high efficiency is very difficult, we have controled only the second- and third-harmonics to obtain the high efficiency with the CRLH TL. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.4
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• pp.445-452
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• 2019

Today, most detection systems used in the marine industry are the majority of devices operating in the high-power X-band bands. While most detection systems using these frequencies in the X-Band band can expect a wide range of detection performance, they are not suitable for precision detection and have the limitation that they are large and heavy. In this paper, we designed, fabricated and tested an electronic scanner capable of detecting not only the surrounding objects but also the ocean waves at a low power of less than 2W in the 17GHz frequency band of the Ku-Band. A high-performance patch array antenna and Doppler effect were utilized to obtain sufficient detection performance even at low power. As a result of the test, it was confirmed that the performance was sufficiently valuable.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.943-948
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• 2018

In this paper, SSPA Module for X-band radar was designed and fabricated by using GaN MMIC. For the purpose of configuring the high power SSPA module, the drive steamers are composed of 2-layers of GaN MMIC with considering Gain Loss. In addition, the power divider and power combiner used a 4way approach by designing a 4-stage power amplifier. The power divider has a loss of -3.0dB or more, and the I/O has a loss of -0.2dB in the power combiner and the phase difference between the ports are good at $2^{\circ}$ on average. The fabricated SSPA module got the measurement results that satisfy a Gain 48dB, P(sat)=88.3W(49.46 dBm), PAE=30.3% or more efficiency in condition of frequency range 9~10GHz. The fabricated X-Band SSPA module can be applied in RF performance improvement for SSPA module whit improvement of power divider/combiner.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.