• 전력전자학회논문지
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• 제23권3호
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• 한국전자파학회논문지
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• 제19권3호
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• pp.304-310
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• 2008

이동 통신용 안테나로 PEC(Perfect Electric Conductor) 접지면을 갖는 U-slotted 패치 안테나가 널리 이용되고 있으나, 이동 통신 능력을 확대하기 위하여 대역폭의 개선이 요구되어 왔다. 본 논문에서는 대역폭을 확대하기 위하여 EBG(Electromagnetic Band-Gap) 접지면을 갖는 U-slotted 패치 안테나를 제안하고, 그 복사 특성을 고찰하였다. 본 논문에서 제안한 EBG 접지면을 갖는 U-slotted 패치 안테나의 대역폭이 개선됨을 보이기 위하여 EBG와 PEC 접지면을 갖는 두 가지 형태의 U-slotted 패치 안테나를 설계 제작하고 복사 특성을 측정하였다. 측정결과, EBG 접지면을 갖는 U-slotted 패치 안테나가 PEC 접지면을 갖는 안테나보다 대역폭이 넓은 것으로 확인되었다.

• 한국세라믹학회지
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• 제48권2호
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• pp.200-204
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• 2011

Increase of surface area and decrease of band gap in $TiO_2$ semiconductors are significant to improve the efficiency of water splitting by photoelectrolysis. In this study $TiO_2$ nanotube arrays with ~7 um length and ~100 nm diameter were fabricated by an anodizing technique of titanium foils using DMSO (dimethyl sulfoxide)-based electrolytes. Then to control the band gap of the $TiO_2$ arrays, they were annealed at $550^{\circ}C$ for up to 180 min in $NH_3$ gas ambient. The samples annealed in $NH_3$ gas for 30 min and 60 min showed superior photo-conversion efficiency for water splitting under white and visible light. A $TiO_2$ nanotube annealed in $NH_3$ gas ambient for a period longer than 120 min showed 1 order higher leakage current. It is believed that the decrease of band gap and increase of conductivity in $TiO_2$ nanotube arrays due to $NH_3$ gas treatments result in the superior water-splitting performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• ETRI Journal
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• 제41권6호
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• pp.731-738
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• 2019

We proposed a novel electromagnetic band-gap (EBG) cell-embedded antenna structure for reducing the interference that radiates at the antenna edge in wireless access in vehicular environment (WAVE) communication systems for vehicle-to-everything communications. To suppress the radiation of surface waves from the ground plane and vehicle, EBG cells were inserted between micropatch arrays. A simulation was also performed to determine the optimum EBG cell structure located above the ground plane in a conformal linear microstrip patch array antenna. The characteristics such as return loss, peak gain, and radiation patterns obtained using the fabricated EBG cell-embedded antenna were superior to those obtained without the EBG cells. A return loss of 35.14 dB, peak gain of 10.15 dBi at 80°, and improvement of 2.037 dB max at the field of view in the radiation beam patterns were obtained using the proposed WAVE antenna.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1611-1615
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• 2009

We designed new anthracene-based host material to increase color purity as well as device efficiency. The new blue host, 9,10-bis(2,4-dimethylphenyl)anthracene (BDA), has highly twisted structure and wide band gap due to ortho interaction between anthracene and introduced 2,4-dimethylphenyl substituents. BDA exhibited deep blue fluorescence in solution (${\lambda}_{max}$ = 410 nm) and in solid state (${\lambda}_{max}$ = 429 nm), respectively, with the wide optical band gap (E = 3.12 eV). Blue-light-emitting OLEDs using obtained host and 2% Flu-DPAN as emitter showed 8 cd/A of high efficiency as well as high color purity [CIE coordinates = (0.15, 015)].

• 한국전자파학회논문지
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• 제27권10호
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• pp.945-948
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• 2016

최근 프리미엄급 스마트폰들은 대부분 메탈 프레임을 채용하고 있으며, 이는 중저가 스마트폰으로 확산되고 있는 추세이다. 하지만, 메탈 프레임은 스마트폰 내 디지털 부품에서 발생하는 전자파 노이즈의 좋은 전달 경로가 되어, 스마트폰 상단부 또는 하단부에 위치한 무선 안테나에 전자파 간섭을 일으키는 원인이 될 수 있다. 본 논문에서는 메탈 프레임에 EBG(Electromagnetic Band Gap) 구조를 적용하여 안테나로의 전자파 간섭을 줄일 수 있는 방법을 제안하였다. $7{\times}6$ 배열의 다중 비아(Multi-via) EBG 구조를 갖는 메탈 프레임을 설계하였으며, 이를 적용할 경우, 메탈 프레임을 통한 표면 전자파 노이즈 간섭을 20 dB 정도 저감시킬 수 있음을 시뮬레이션을 통해 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• 전기전자학회논문지
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• 제22권4호
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• pp.1202-1205
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• 2018

본 논문에서는 4H-SiC물질 기반으로 제작된 ggNMOS를 제안하고 전기적 특성을 분석하였다. 4H-SiC는 Wide Band-gap 물질로 Si 물질 보다 면적대비 특성과 고전압 특성이 뛰어나 전력반도체 분야에 주목받고 있다. 제안된 소자는 높은 감내 특성과 Strong snapback 특성을 가진다. 공정은 SiC 공정으로 이루어 졌으며 TLP 측정 장비를 통해 전기적 특성을 분석하였다.