• Korean Journal of Materials Research
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• v.9 no.7
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• pp.753-759
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• 1999

The microstructure and electrical properties of ZNR that W $O_3$ is added in the range 0.5~4.0mol%, were investigated. The major part of W $O_3$ were segregated at the nodal point and W-rich phase was formed. Three crystalline phases, such as W-rich phase (W $O_3$), Bi-rich phase (B $i_2$W $O_{6}$ ), and spinel phase (Z $n_{2.33}$S $b_{0.67}$ $O_4$) were confirmed to be co-existed at the nodal point The average grain size increased in the range 15.5~29.9$\mu\textrm{m}$ with increasing W $O_3$ additive content. Consequently. W $O_3$ acted as a promotion additive of grain growth. As the W $O_3$ additive content increases. the varistor voltage and the nonlinear exponent decreased in the range 186.82~35.87V/mm and 20.90~3.34, respectively, and the leakage current increased in the range of 22.39~83.01 uh. With increasing W $O_3$ additive content, the barrier height and the density of interface states decreased in the range 1.93~0.43eV and (4.38~1.22)$\times$10$^{12}$ $\textrm{cm}^2$, respectively. W $O_3$ acted as an acceptor additive due to the donor concentration increasing in the range (1.06~0.38)$\times$10$^{18}$ /㎤with increasing W $O_3$ additive content.t.t.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.943-948
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• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of Chest Surgery
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• v.36 no.9
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• pp.651-658
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• 2003

Since the first implanted in September 1997, the use of On-X prosthetic heart valve has been increasing around in the world. This study was designed to assess the feasibility, safety, and the postoperative hemodynamics with this new valve in clinical setting. Material and Method: The current study was carried out on 52 patients undergoing aortic valve replacement with this prosthesis between April 1999 to August 2002 at Chonnam National University Hospital to evaluate the surgical results. 52％ of the patients were male and the average age at implant was 50$\pm$13 years. The study followed the guidelines of the AATS/STS. Preoperatively, 32(61.5％) patients were in NYHA functional class III or IV and 2 patients had previous aortic valve surgery. Concomitant cardiac surgery was performed in 71.1％. The implanted valve sizes were 19 mm in 13 patients, 21 mm in 26, 23 mm in 10 and 25 mm in 3, respectively. Mean follow-up was 16.6$\pm$10.5 months (1∼39 months). Echocardiographic assessment was performed pre- and immediate postoperatively, as well as 3, 6, 12 months after surgery, evaluating pressure loss and regression of left ventricular hypertrophy. Result: Mean cardiopulmonary bypass time was 191$\pm$94.7 minutes with an aortic cross-clamp time of 142$\pm$51.7 minutes. There was no early and late mortality, Freedom from adverse events at 1 year in the study were as follows: thromboembolism, 95.6$\pm$6％; bleeding events, 90.2$\pm$4％; paravalvular leakage 92.3$\pm$4％; and overall valve-related morbidity at 1 year was 76.6$\pm$3％. There were no cases of valve thrombosis, prosthetic valve endocarditis and structural or non-structural failure. Left ventricular function at 12 months after surgery (EF=62.7$\pm$9.8％) revealed a statistically significant improvement compared to preoperative investigation (EF=55.8$\pm$15.9％, p=0.006). Left ventricular mass index was 247.3$\pm$122.3 g/$m^2$ on preoperative echocardiographic study, but regressed to 155.5$\pm$58.2 g/$m^2$ at postoperative 1 year (p=0.002). Over the follow-up period a further decrease of peak transvalvular gradients was observed in all patients: 62.5$\pm$38.0 mmHg on preoperative assessment, 18.2$\pm$6.8 mmHg at immediate postoperative period (p < 0.0001), 7.6$\pm$5.09 mmHg (p<0.0001) at 6 month, 18.0$\pm$10.8 mmHg (p<0.0001) at 1 year. Conclusion: The On-X prosthetic heart valve performs satisfactorily in the first 1 year period. Clinical outcome by examining NYHA functional classification revealed especially good results. Effective regression of left ventricular hypertrophy and statistically significant decrease of transvalvular gradient were observed over the first year, but longer-term follow-up of this patient group is needed to establish the expected rates for late valve-related events as well as the long-term clinical efficacy of this valve.