• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.289-293
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• 2017

$Y_2Ti_2O_7$ nanoparticles (0.3 mol%) have been successfully synthesized by the co-precipitation process. The samples, adjusted to pH7 with ammonia solution as catalyst and calcined at $700{\sim}900^{\circ}C$, exhibit very fine particles with close to spherical shape and average size of 10-30 nm. It was possible to control the size of the synthesized $Y_2Ti_2O_7$ particles by manipulating the conditions. The $Y_2Ti_2O_7$ nanoparticles were coated on a glass substrate by a dipping coating process with inorganic binder. The $Y_2Ti_2O_7$ solution coated on the glass substrate had excellent adhesion of 5B; pencil hardness test results indicated an excellent hardness of 6H. The thickness of the thick film was about $30{\mu}m$. Decomposition of MB on the $Y_2Ti_2O_7$ thin film shows that the photocatalytic properties were excellent.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.67-70
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• 1999

We have fabricated YBa$_2Cu_3O_{7-x}$ thin films by cylindrical hollow cathode sputtering. For 2 inch diameter of MgO (100) substrate, we obtained the zero resistance temperature in the range from 83 K to 86 K and thickness uniformity better than 5 % over the whole area. Also, the average deposition rate was 100nm/h which is higher than 10 times compare to conventional off-axis sputtering method. These results indicate that cylindrical hollow cathode sputtering seems to have unique capabilities for high rate and homogeneous deposition of large area thin film.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.312-317
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• 1994

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.

• Applied Chemistry for Engineering
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• v.29 no.2
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• pp.162-167
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• 2018

The effect of the average particle size and shape of silver nanoparticles for the transparent conductive film (TCF) was studied. Optical and electrical properties of silver conductive lines coated on the polyethylene terephthalate (PET) film was also measured. Silver nanoparticles produced by Ag-CM, Ag-ME, Ag-EE methods showed an excellent conductivity compared to those produced by Ag-EB, Ag-CR and Ag-PL methods, but a little difference in the transparency. In the case of the former three silver nanoparticles, the average particle size was about 80 nm or less and the size was uniform. For the latter case, the severe agglomeration phenomena of particles was observed and the average particle size was 100 nm or more. This result was consistent with the result of the uniformity of the pattern shape and thickness on conductive line patterns observed by SEM. Therefore, it was confirmed that the electrical characteristics could be obtained when the average particle size of silver nanoparticles is smaller and the uniformity of the particles is maintained.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.64-66
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• 2004

$Pb(Zr_{0.3},Ti_{0.7})O_3$, $Pb(Zr_{0.3},Ti_{0.3})O_3$ powders were prepared by the sol-gel method and PZT heterolayered thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ration were studied. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around $864^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The PZT heterolayered thick film sintered at $1050^{\circ}C$ for 10min showed the average grain size $1{\sim}1.4{\mu}m$. The average thickness of PZT heterolayered thick films, obained by $3{\sim}6times$ of screen-printing, was approximately $60{\sim}110{\mu}m$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.280-288
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• 2000

In this study, flow factors are evaluated in terms of kurtosis using random rough surface generated numerically. As h/$\sigma$become large øx, øy, øfp approach to 1 and øs, øfs to 0 asymptotically regardless of kurtosis. øx, øy, øfp increase with increasing kurtosis in the mixed lubrication regime. øs, øfs is associated with an additional flow transport due to the combined effect of sliding and roughness. As h/$\sigma$ decreases øs, øfs increase up to a certain point, and then decrease toward zero. This behavior can be attributed to the increasing number of contacts in the mixed lubrication regime. øx in the presence of elastic deformation on the surface is larger than øx in the absence of it because local film thickness( h$\_$T/) increases by elastic deformation.