• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1437-1439
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• 2009

Electrical and optical properties of $SiO_2$-doped ZnO (SZO) films on the corning 7059 glass substrates by using rfmagnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates at 3 wt.% is $4^{\circ}$A/s. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap decreases from 3.52 to 3.33 eV with an increase in thickness. X-ray diffraction patterns show that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO films at the $SiO_2$ contents of 2 wt.% shows the resistivity of about $3.8{\times}10^{-3}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.245-247
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• 2002

The paper represents the effects of the drive-in process parameters on the residual stress profile of the p+ silicon film. For the quantitative determination of the residual stress profiles, the test samples are doped via the fixed boron diffusion process and four types of the thermal oxidation processes and consecutively etched by the improved process. The residual stress measurement structures with the different thickness are simultaneously fabricated on the same silicon wafer. Since the residual stress profile is not uniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All of the coefficients of the polynomial are determined from the deflections of cantilevers and the displacement of a rotating beam structure. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Also, near the surface of the p+ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

• Journal of Ceramic Processing Research
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• 제20권6호
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• 한국세라믹학회지
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• 제52권1호
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• pp.72-76
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• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• 대한방사선기술학회지:방사선기술과학
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• 제25권2호
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• pp.47-55
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• 2002

유방촬영에 대한 화질과 평균유선조직선량에 대하여 실험한 결과 반가층은 장치마다 큰 차이를 나타내지 않았으며, 자동노출기구를 사용할 경우 정확성에 문제가 있으므로 확인이 필요하다. 유방촬영에 사용되는 자동현상기 또한 꼭 관리가 필요하며, 유방촬영 시 사용되는 증감지/필름에 따라서 팬톰 촬영 식별능에 많은 영향을 받고 있으므로 선택 시 신중을 기해야 한다. 유방두께 4.2 cm에 대한 평균유선조직 선량은 관전압에 따라 달라지며, ACR기준인 3.0 mGy보다 훨씬 적은 $0.26{\sim}1.39\;mGy$로 나타났다. 이상에서 알 수 있듯이 유방촬영에서는 촬영장치의 성능뿐만 아니라 HVL, AEC, 자동현상기 관리, 증감지/필름 등 모두 관리가 되어야 하며, 이로 인해 평균유선조직선량은 더 줄일 수 있을 것이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.36.2-36.2
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• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• 한국표면공학회지
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• 제47권6호
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• pp.303-310
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• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• 한국결정성장학회지
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• 제20권6호
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• pp.254-261
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• 2010

본 연구에서는 다결정 실리콘 태양전지 응용을 위한 다결정 실리콘 씨앗층의 제조와 그의 특성에 관한 연구를 수행하였다. 다결정 실리콘 씨앗층은 glass/Al/$Al_2O_3$/a-Si 구조를 이용하여 aluminum-induced layer exchange(ALILE) 고정으로 제조하였으며, 자연산화막부터 50 nm까지 다양한 크기로 $Al_2O_3$ 막두께를 변화시켜 알루미늄 유도 결정화 공정에서 막의 두께가 결정화 특성 및 결정결함, 결정크기에 미치는 영향에 대하여 조사하였다. 연구결과, ALILE 공정으로 생성된 다결정 실리콘막의 결함은 $Al_2O_3$ 막의 두께가 증가할수록 함께 증가한 반면, 결정화 정도와 결정입자의 크기는 $Al_2O_3$막의 두께가 증가할수록 감소하였다. 본 실험에서는 16 nm 두께 이하의 앓은 $Al_2O_3$ 막의 구조에서 평균 약 $10\;{\mu}m$ 크기의 sub-grain 결정립을 얻었으며, 결정성은 <111> 방향의 우선 배향성 특성을 보였다.

• Tribology and Lubricants
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• 제27권6호
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• pp.326-331
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• 2011

The purpose of this paper is to analyze and discuss the effects of surface roughness by comparing the elastohydrodynamic lubrication(EHL) analysis of smooth surface and rough surface as the ball bearing. In order to do this, The average flow model is adapted for the interaction of the flow rheology of lubricant and surface roughness. The average Reynolds equation and the related flow factor which describes the coupled effects of surface roughness and flow rheology, the viscosity-pressure and density-pressure relations equations, the elastic deformation equation, and the force balance equation are solved simultaneously. The results show that effects of surface roughness on the film thickness and pressre distribution should be considered especially in EHL contact problems.