• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.258-260
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• 2008

Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below $4\;{\mu}m$ with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.55-56
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• 2007