• Title/Summary/Keyword: asymmetric channel

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PERISTALTIC PUMPING OF AN ELLIS FLUID IN AN INCLINED ASYMMETRIC CHANNEL

  • A. SMALL;P. NAGARANI;M. NARAHARI
    • Journal of applied mathematics & informatics
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    • v.41 no.1
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    • pp.51-70
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    • 2023
  • The flow of an incompressible Ellis fluid in an inclined asymmetric channel, driven by peristaltic waves was studied under low Reynolds number and long wavelength assumptions. The wave on each side of the channel are assumed to be an infinite train of sinusoidal waves, both having the same constant wave speed and wavelength however, they vary in wave amplitude, channel half width and phase angle. We derived expressions for the axial and transverse velocities, volume flow rate, pressure rise per unit wavelength and streamlines. The effects of varying the wave amplitudes, the phase angle, the channel width, the angle of inclination of the channel as well as the fluid parameters on the flow were analyzed. Trapping conditions were determined and the presence of reflux highlighted using the streamlines for the necessary channel and fluid conditions. By varying the fluid parameters, changes in the fluid that deviated from the Newtonian case resulted in a reduction in the axial velocity in the neighborhood of the center of the channel and a simultaneous increase in the velocity at the periphery of the channel. A nonlinear relation was observed with the pressure rise and the volume flow rate. This nonlinear relation is more pronounced with an increase in the absolute value of the volume flow rate. For Newtonian fluids a linear relation exists between these two variables. The fluid parameters had little effects on the streamlines. However, variations of the wave amplitudes, volume flow, channel width and phase angle had greater effects on the streamlines and hence the trapped region.

Dynamic Channel Allocation and Channel Access Mechanism of Multimedia Traffic in the UTRA TDD Systems (UTRA TDD 시스템에서 멀티미디어 트래픽의 동적 채널 할당 및 채널 액세스 매커니즘)

  • 주용원;윤찬영;오영환
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.8C
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    • pp.819-827
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    • 2002
  • Personal mobile communication has been developed up to IMT-2000 which is called the third generation mobile communication. The first generation of personal mobile communication was analog cellular, the second was digital cellular, and the 2.5 generation was PCS. Before the third generation had been developed, the personal mobile communication service was focused mainly on the voice-oriented service. But, we can expect that multimedia service after the third generation system will be the core of the subject. T In this thesis, we propose a dynamic resource allocation algorithm in the UTRA TDD systems which can support the asymmetric traffic propensity and multimedia traffic. The proposed algorithm consists two sub-algorithms. One is the dynamic channel allocation method that determines the amount of bandwidth assigned between uplink and downlink according to resource allocation status list through asymmetric traffic propensity. The other is the channel access mechanism that assigns RU to bearer service generated in a cell. By simulation, the proposed dynamic resource allocation algorithm is proved to support asymmetric propensity of traffic and shows a better throughput for multimedia traffic.

Threshold Voltage Roll-off for Bottom Gate Voltage of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 하단게이트 전압에 따른 문턱전압이동현상)

  • Jung, Hakkee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.05a
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    • pp.741-744
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    • 2014
  • This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

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Aerodynamic Characteristics of a Variable-Span Wing Flying Inside a Channel II (Effect of Asymmetric Wing Extensions) (채널 내를 비행하는 가변스팬 날개 공력특성 II (비대칭 날개 펼침))

  • Han, Cheolheui
    • Journal of Aerospace System Engineering
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    • v.10 no.3
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    • pp.39-43
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    • 2016
  • In this paper, a wind-tunnel test is accomplished to investigate the roll characteristics of a variable-span wing flying inside a channel. The factors that affect the roll characteristics of the wing were identified by analyzing the measured data; accordingly, when the wing is flying without both the ground and sidewall effects, the asymmetric wing extension causes the roll moment. Both the ground and the sidewall can increase the roll moment, but when the wing is affected by both the ground and the sidewall, the roll moment does not increase as much as the case where the wing is only affected by the ground. Also, the aerodynamic characteristics of the flying wing inside a channel are the nonlinear function of the wing height and the gap between the wingtip and the sidewall, both of which should be considered in a study of the stability and the flight control of the wing-in-ground effect of the vehicle flying inside a channel.

A Study on the Non-linear Relationship between Asymmetric Interdependence and Conflict (불균형적 상호의존성과 갈등간 비선형적 관계에 대한 연구)

  • Kim, Jong-Keun;Kim, Jae-Wook
    • Journal of Distribution Research
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    • v.10 no.2
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    • pp.49-72
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    • 2005
  • As interdependence and conflict are important to the understanding of channel interactions, many researchers have studied their relationship. Identifying the relationship between interdependence and conflict will help understanding an exchange relationship. In social science, the relationship between interdependence and conflict is explained by two contradictory theories, and there are also inconsistent results in marketing science. The authors suggest non-linear relations between asymmetric interdependence and conflict, based on bilateral deterrence theory and conflict spiral theory. Using survey data from industrial market, we demonstrate that there is an inverted U-shaped relationship between asymmetric interdependence and interfirm conflict. The result show, as the magnitude of interdependence is high. the hypothesis on the non-linear relationship between asymmetric interdependence and conflicts is acceptable on both suppliers and distributors. Finally, we discuss several theoretical implications and suggest limitations and future research issues.

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Analysis for Potentail Distribution of Asymmetric Double Gate MOSFET Using Series Function (급수함수를 이용한 비대칭 이중게이트 MOSFET의 전위분포 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.11
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    • pp.2621-2626
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    • 2013
  • This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

Analysis for Potential Distribution of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 전위분포 분석)

  • Jung, Hakkee;Lee, Jongin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.691-694
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    • 2013
  • This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

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Analysis of Threshold Voltage for Symmetric and Asymmetric Oxide Structure of Double Gate MOSFET (이중게이트 MOSFET의 대칭 및 비대칭 산화막 구조에 대한 문턱전압 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.12
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    • pp.2939-2945
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    • 2014
  • This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

An Improvement of BER Performance for Coded 16-QAM over Mobile Communication Channel by Asymmetric Signal Constellation (비대칭 신호점에 의한 부호화된 16-QAM의 이동 무선 채널에서의 BER 성능 개선에 관한 연구)

  • 김태헌;하덕호
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.2
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    • pp.197-206
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    • 1997
  • The purpose of this paper is to propose an improvement method of BER for coded 16QAM over Rayleigh fading channel. To overcome the BER degradation due to the fading under mobile communication, we apply trellis coded modulation technique which is efficient to get a coding gain without the expansion of bandwidth. Especially, to minimize the burst error which are the main factor of the BER degradation for mobile communication systems, we apply interleaving/deinterleaving method to the studying system. Also we apply asymmetric signal mapping methods to this TCM scheme. From the computer simulation, BER performance of asymmetric case has achieved about 1 dB improvement of about $10^{-4}$, compared to the traditional symmetric case.

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PRML Detection for Asymmetric High-density Optical Storage System (고밀도 비선형 광 저장장치를 위한 새로운 부분응답 최대유사도 신호 검출 기술)

  • Lee, Kyu-Suk;Lee, Jae-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.10C
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    • pp.927-932
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    • 2006
  • We Propose a partial response maximum likelihood(PRML) detection method that improves the performance of the high-density optical storage system. It concurrently adjusts the coefficient of equalizer and reference values of branches in Viterbi detector. For the estimation of asymmetric channel characteristics by the tangential tilt, we exploit sync patterns in each data frame. The simulation result shows it improves the Performance up to 4dB at 10-6 BER compared to conventional adaptive PRML.