• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.2B
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• pp.97-109
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• 2012

In this paper, we propose a modulation scheme for a network-coded bi-directional relaying (NBR) system over an asymmetric channel, which means that the qualities of the relay channel (the link between the BS and RS) and access channel (the link between the RS and MS) are not identical. The proposed scheme employs a dual constellation in such a way that the RS broadcasts the network-coded symbols modulated by two different constellations to the MS and BS over two consecutive transmission intervals. We derive an upper bound on the average bit error rate (BER) of the proposed scheme, and compare it with the hybrid constellation-based modulation scheme proposed for the asymmetric bi-directional link. Furthermore, we investigate the channel utilization of the existing bi-directional relaying schemes as well as the NBR system with the proposed dual constellation diversity-based modulation (DCD). From our simulation results, we show that the DCD gives better average BER performance about 3.5~4dB when $E_b/N_0$ is equal to $10^{-2}$, while maintaining the same spectral efficiency as the existing NBR schemes over the asymmetric bi-directional relaying channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Korean Journal of Organic Agriculture
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• v.26 no.4
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• pp.571-583
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• 2018

The purpose of this study is to explore the dynamic properties of causality and asymmetric price transmission in the distributional channel of the tomato market in Korea. Using the wholesale and retail price series of the tomato market, we obtain the following results. First, the price transmission mechanism reveals the causal relationship channeling from the wholesale price to the retail price. Second, we find an asymmetric price transmission from the analysis using the threshold partial adjustment model. The retail price responds strongly when the wholesale price increases. On the other hand, the retail price shows sluggish adjustment when the wholesale price decreases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.635-640
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• 2016

Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shor-tchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ${\sim}446{\times}$ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.12
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• pp.4432-4450
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• 2014

It is widely observed that in practical wireless cooperative communication systems, different links may experience different fading characteristics. In this paper, we investigate into the outage probability and channel capacity of two-way amplify-and-forward (TWAF) relaying systems operating over a mixed asymmetric Rician and Rayleigh fading scenario, with different amplification policies (AP) adopted at the relay, respectively. As TWAF relay network carries concurrent traffics towards two opposite directions, both end-to-end and overall performance metrics were considered. In detail, both uniform exact expressions and simplified asymptotic expressions for the end-to-end outage probability (OP) were presented, based on which the system overall OP was studied under the condition of the two source nodes having non-identical traffic requirements. Furthermore, exact expressions for tight lower bounds as well as high SNR approximations of channel capacity of the considered scenario were presented. For both OP and channel capacity, with different APs, effective power allocation (PA) schemes under different constraints were given to optimize the system performance. Extensive simulations were carried out to verify the analytical results and to demonstrate the impact of channel asymmetry on the system performance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.797-808
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• 2000

This paper presents the bit error rate(BER) upper bounds for trellis coded asymmetric 8PSK(TC-A8PSK) system using the Ka-band satellite in the rain fading environment. The probability density function(PDF) for the rain fading random variable can be theoretically derived by assuming that the rain attenuation can be approximated to a long-normal distribution and the rain fading parameters are calculated by using the rain precipitation data from the Crane global model. Furthermore, we analyze the BER upper bounds of TC-A8PSK system according to the number of states in the trellis diagram and the availability of channel state information(CSI). In the past, Divsalar and Simon[9] has analyzed the BER upper bounds of 2-state TCM system in Rician fading channels however this paper is the first to analyze the BER upper bounds of TCM system in the rain fading channels. Finally, we summarize the dominant six factors which are closely related to the BER upper bounds of TC-A8PSK satellite system in the rain fading channel as follows: 1) frequency band, 2) rain intensity, 3) elevation angle, 4) signal to noise ratio, 5) asymmetric angle, and 6) availability of CSI.