• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.5
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• pp.657-662
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• 2013

A size-reduced high frequency mixer designed by adopting artificial dielectric substrate is described in this work. The artificial dielectric substrate is composed by stacking the lower substrate in which a lot of metalized via-holes exist, and upper substrate on which microstrip lines are realized. The effective dielectric constant increases due to the inserted lots of via-holes, and this may be applied to size-reduction of high frequency circuits. In this work, in order to present an application example of size-reduction for active high frequency circuits using the artificial dielectric substrate, a 8GHz single gate mixer is miniaturized and measured. It is described that the basic circuit elements for mixers such as hybrid, low pass filter, and matching networks can be replaced by the artificial dielectric substrate for size-reduction. The final mixer has 55% of size compared to the normal one. The measured average conversion gain is around 3dB which is almost similar result as the normal circuit.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.7
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• pp.3169-3175
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• 2011

This paper describes the design of size-reduced directional coupler using the artificial dielectric substrate and its increased effective permittivity. Directional couplers are widely used in measuring RF power indirectly and coupling signal power. Artificial dielectric substrates have higher effective dielectric constant than standard dielectric substrate due to the lots of metalized via-holes, and the increased effective permittivity results in size-reduction of circuits. As a design example, 15dB directional couplers are designed on the standard substrate and artificial dielectric substrate and their size are compared. The size of the directional coupler using the artificial dielectric substrate is only 1/3 of that designed using the standard substrate, while the performances are preserved. In addition, the measured performances of the size-reduced coupler are well agreed with the simulated ones. The measured coupling coefficient, matching, and insertion loss at 2GHz are -14.62dB, -24.1dB, and -0.38dB, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1585-1591
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• 2009

This paper describes a new method for extracting characteristic impedance of transmission line using Substrate Integrated Artificial Dielectric (SIAD). The new procedure to calculate the characteristic impedance of SIAD transmission line is described with the proper equations and basic transmission line theory. The characteristic impedance is determined as an almost fixed value in the proposed method, while it fluctuates according to frequency in the previous method. As the result, the effective dielectric constant of SIAD transmission line is calculated as a fixed value rather than fluctuating one. In order to show the validity of the proposed method, SIAD microstrip lines are simulated and measured, and characteristic impedances and effective dielectric constant are calculated and compared to the previous method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.5
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• pp.3139-3145
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• 2014

This paper describes the design of a size-reduced ring hybrid coupler for microwave band using an artificial dielectric substrate(ADS). ADS structure adopts the second substrate on which has lots of the metalized via-holes. The effective capacitance and effective dielectric constant per unit length of ADS increases compared to the normal substrate due to the via-holes. This enables the physical length of microstrip transmission line to be reduced by adopting ADS instead of the normal substrate. In order to present an example of size-reduction of microwave wireless circuit by ADS, a size-reduced 3GHz ring hybrid coupler is designed, fabricated and measured in this work. The designed coupler has the smaller size from the normal one by 65% due to the ADS, while no critical degradation from ideal performances is observed. The measured power division ratio at two output ports are -3.05dB and -3.135dB, respectively. In addition, the phase differences are 3o for in-phase division and 176o for out of phase split. The measured performances are so similar to ideal ones, and prove the design of size-reduced ring hybrid coupler using ADS is successful.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2319-2324
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• 2012

In this paper, the design of asymmetric branch line couplers using artificial dielectric substrate (ADS) is described. The effective permittivity and permeability increase in ADS because of the lots of the inserted via-holes. So the physical length and width of transmission lines realized on ADS are reduced compared to the standard lines. This enables one to design size-reduced microwave circuits. As an instance in this work, an asymmetric branch line coupler with the ratio of 3:1 is designed at 2GHz. The designed coupler has a small size of 53.4% compared to the normal circuit while the same performances are preserved. A good agreement between the simulated and measured asymmetric power dividing ratio is shown. The measured loss is only less than 0.2dB, which is a very small value.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1542-1548
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• 2009

This paper describes a size-reduced Wilkinson power divider using substrate integrated artificial dielectric(SIAD). SIAD transmission lines have increased effective refractive index, so the line width and length are reduced from those of standard transmission lines. Therefore the "size-reduction effect" is achieved if SIAD lines are applied to high frequency circuits. An efficient simulation method is proposed for SIAD lines which have an enormous number of via-holes. A 2GHz Wilkinson power divider is designed and measured using SIAD transmission line as an example of application. The size of the fabricated divider is reduced by 32% due to the increased effective refractive index of SIAD, while the performances are maintained similarly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.578-578
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• 2012

Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.613-623
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• 2012

In this paper, we present an ultra miniaturized voltage tuned oscillator, with HMIC-type amplifier and phase shifter, using LTCC artificial dielectric resonator. ADR which consists of periodic conductor patterns and stacked layers has a smaller size than a dielectric resonator. The design specification of ADR is obtained from the design goal of oscillator. The structure of the ADR with a stacked circular disk type is chosen. The resonance characteristic, physical dimension and stack number are analyzed. For miniaturization of ADRO, the ADR is internally implemented at the upper part of the LTCC substrate and the other circuits, which are amplifier and phase shifter are integrated at the bottom side respectively. The fabricated ADRO has ultra small size of $13{\times}13{\times}3mm^3$ and is a SMT type. The designed ADRO satisfies the open-loop oscillation condition at the design frequency. As a results, the oscillation frequency range is 2.025~2.108 GHz at a tuning voltage of 0~5 V. The phase noise is $-109{\pm}4$ dBc/Hz at 100 kHz offset frequency and the power is $6.8{\pm}0.2$ dBm. The power frequency tuning normalized figure of merit is -30.88 dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.7
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• pp.3474-3481
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• 2013

In this work, a new high frequency transmission line structure combined with defected ground structure (DGS) and artificial dielectric substrate (ADS) structure is proposed. DGS patterns give add the additional inductance to transmission lines and results in the increased characteristic impedance for a given line width. To the contrary, ADS presents increased capacitance and reduced line impedance. So both play a role in reducing the length of transmission lines commonly, but in preserving the line impedance complementarily. This means that the length of transmission lines can be reduced furtherly by DGS and ADS without a critical change of line width compared to the cases when one of DGS and ADS is used only. As examples, $35{\sim}100{\Omega}$ transmission lines having DGS and ADS are designed, fabricated, measured, and compared to the simulation results. A good agreement between the simulated and measured line impedances is presented. In addition, the physical lengths of the proposed transmission lines are only 55.4~76.9% of those of the normal microstrip lines for the same electrical lengths.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.166-170
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• 2002

Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .