• Fire Science and Engineering
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• v.25 no.3
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• pp.107-112
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• 2011

We have considered the fire hazard by the static in anti-static film manufacturing factory on this study. Solvents that the flash point as ethanol, methanol and iso-propyl alcohol is low are used on the manufacturing process of anti-static film, and the minimum ignition energy of these solvents is ignited easily despite less discharge energy form 0.16 mJ to 0.65 mJ. After the static electric potential produced on each of the manufacturing plants was measured, electric potential on films of paste board is measured form 17 kV to 20 kV. But this exceeds 5 kV, which is electrifiable of objective of nonconductor for fire & explode protection. Therefore, We figure out the fire hazard was high by a static discharge in anti-static film manufacturing factory.

• Polymer(Korea)
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• v.36 no.4
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• pp.531-535
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• 2012

Conductive polyaniline (PANI) nanofibers in UV-curable resin were used for a transparent conductive film. The emeraldine-salt PANI (ES-PANI) nanofibers were prepared by chemical oxidation polymerization of aniline, which could be changed into emeraldine-base PANI by dedoping. EB-PANI nanofibers as a precursor for conductive fillers were thereby transformed into re-dpoed PANI (rES-PANI) by dodecylbenzenesulfonic acid in the UV-curable resin solution. rES-PANI nanofibers have high conductivity and long-term stability in the solution without a defect of nanostructure. The resulting conductive resin solution was proved to be highly stable where no precipitation of rES-PANI fillers was observed over a period of 3 months. The transparent film was spin-casted on a poly(methyl methacrylate) sheet of thickness ca. $5{\mu}m$. A surface resistance of $6.5{\times}10^8{\Omega}/sq$ and transmittance at 550 nm of 91.1% were obtained for the film prepared with a concentration of 1.4 wt% rES-PANI nanofibers in the solution. This transformation process of rES-PANI from ES-PANI by dedoping-redoping can be an alternative method for the preparation of an antistatic protection film with controllable surface resistance and optical transparencies with the PANI concentration in UV-curable solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1138-1141
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• 2004

고분자 재료에 이온을 주입하면 표면전기저항이 이온주입조건에 따라 $10^{16}\Omega/sq$ 에서 $10^7\Omega/sq$ 까지 변하게 되며, 광학적 특성도 변하게 된다. 이는 산업적으로 대전방지 등에 적용이 가능하며 이러한 신소재 개발을 위하여 산업용 이온빔 표면처리 장치를 제작하고 인출광학을 기초로 이온빔을 제어하여 고분자 재료의 이온주입처리 양산기술을 개발하였다. 본 연구에서는 대면적, 대전류 이온빔 인출을 위한 이온원의 광학적 설계 및 빔라인에서의 솔레노이드 전자석을 이용한 빔프로파일 제어방법을 설명하였다. 사용된 고분자 소재는 PC(PolyCarbonate) 및 PET(PolyEthylene Teraphthalate)이며, 질소이온주입조건은 이온에너지 40-50 keV, 이온주입량 $5\times10^{15}$, $1\times10^{16}$, $7\times10^{16}ions/cm^2$의 조건으로 공정을 수행하였다. 또한 대전방지용 고분자 대량생산을 위한 연속 생산조건과 양산공정조건에 따른 표면전기저항변화를 관찰하였다.

• Macromolecular Research
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• v.12 no.3
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• pp.303-310
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• 2004

We have prepared an aqueous dispersion of poly(aniline-dodecyl benzene sulfonic acid complex) (PANI-DC) that has an intrinsic viscosity (〔η〕) near 1.3 dL/g using aniline as a monomer, dodecyl benzene sulfonic acid(DBSA) as a dopant/emulsifier, and ammonium peroxodisulfate(APS) as an oxidant. We found that the electrical conductivity of a PANI-DC pellet was 0.7 S/cm. A waterborne-polyurethane (WBPU) dispersion, obtained from isophorone diisocyanate/polytetramethylene oxide glycol/dimethylol propionic acid/ethylene diamine/triethylene amine, was used as a matrix polymer. We prepared blend films of WBPU/PANI-DC with variable weight ratios (from 99/1 to 66/34) by solution blending/casting and investigated the effects that the PANI-DC content has on the mechanical and dynamic mechanical properties, hardness, electrical conductivity, and antistaticity of these films. The tensile strength, percentage of elongation, and hardness of WBPU/PANI-DC blend films all decreased markedly upon increasing the PANI-DC content. The antistatic half-life time ($\tau$$\sub$$\frac{1}{2}$/) of pure WBPU film was about 110 s, but we found that those of WBPU/ultrasound-treated PANI-DC blend films decreased exponentially from 1.2 s to 0.1 s to almost 0 s upon increasing the PANI-DC content from 1 wt% to 15 wt% to > 15 wt%, respectively.

• Applied Chemistry for Engineering
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• v.24 no.2
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• pp.196-200
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• 2013

We conducted investigation on polymeric binders for anti-static coating agent which can maintain stability under the high-voltaic condition. Various polyesters composed of polyethylene glycol (PEG) and polypropylene glycol (PPG) were synthesized and studied in term of the variation in the surface resistance of the film made from coating solution composed of a conductive polymer and these polyesters as a binder. We found that the surface resistance displayed $10^7{\sim}10^8{\Omega}/{\square}$ regardless of chemical composition of binders under the potential of 10 V. Whereas, the surface resistance surged to higher than $2{\times}10^{10}{\Omega}/{\square}$ when 1000 V was applied, rendering it improper for anti-static purpose. When 1,4 butanediol (BD) was incorporated into polyesters ([PEG]/[PPG]/[BD] = 25.0/67.5/7.5), the surface resistance showed $2.8{\times}10^9{\Omega}/{\square}$ under 1000 V, acceptable for anti-static application. These observations may indicate that the hydrophobic nature of BD makes a significant contribution to the surface resistance at a high positive potential.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.323-329
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• 2000

In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.