• 대한전자공학회논문지
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• 제27권5호
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• pp.737-746
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• 1990

Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.249-249
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• 2010

We investigated novel surface treatment and its impact on silicon photovoltaic cells. Using 2-step etching methods, we have changed the nanostructure on pyramid surface so that less light is reflected. This work proposes an improved texturing technique of mono crystalline silicon surface for solar cells with sub-nanotexturing process. The nanotextured silicon surface exhibits a lower average reflectivity (~4%) in the wavelength range of 300-1100nm without antireflection coating layer. It is worth mentioning that the surface of pyramids may also affect the surface reflectance and carrier lifetime. In one word, we believe nanotextruing is a promising guide for texturization of monocrystalline silicon surface.

• ETRI Journal
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• 제24권5호
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• pp.341-348
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• 2002

We propose an asymmetric sampled grating laser and a multi-wavelength laser array associated with it. Asymmetric sampling periods combined with an index shifter make it possible to use first order reflection for lasing operations. With the structure of our design, we achieved a simple fabrication procedure as well as a high yield without using complex and time-consuming e-beam lithography for multi-period gratings. We analyzed the effect of mirror coating by numerical analysis to improve single mode and power extraction performance. By using high reflection-antireflection coatings, we obtained high power extraction efficiency without degradation of the single mode property. For the multi-wavelength laser array, to gain wavelength control, we varied the sampling periods from one laser to an adjacent laser across the array. With this approach, we showed the feasibility of an array of up to 30 channels with 100 GHz wavelength spacing.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.202-203
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• 2009

Plasma etching was studied to obtain high-efficiency Si solar cells. SiN nanoparticles were observed upon the plasma treatment using SF6 gas. The mechanism of the nanoparticles formation has been studied. A net increase in the current density (Jsc) of the cells of $1.7mA/cm^2$ and in the conversion efficiency ($\eta$) of 2.1% is obtained after the plasma treatment for 10s, thanks to the significant decrease of reflection in the shorter wavelength range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.300-300
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• 2011

Si oxidation is a key process in developing silicon devices, such as highly integrated metal-oxide-semiconductor (MOS) transistors and antireflection-coating (ARC) on solar cell substrate. Many experimental and theoritical studies have been carried out for elucidating oxidation processes and adsorption structure using ab initio total energy and electronic structure calcultaions. However, the initial oxidation processes at step edge on vicinal Si surface have not been studied using the ReaxFF reactive force field. In this work, strucutural change, charge distribution of oxidized Si throughout the depth from Si surface were observed during oxidation processes on vicinal Si(001) surface inclined by $10.5^{\circ}$ of miscut angle toward [100]. Adsorption energys of step edge and flat terrace were calculated to compare the oxidation reaction at step edge and flat terrace on Si surface.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.168-169
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• 2005

실온에서 디스플레이 응용을 위하여 ICP CVD로 PET기판 위에 실리콘 산화 반사 방지막을 성장시키고, EDXA로 분석하였다. 분광 Ellipsometer, UV-V와 FTIR분광기를 이용하여 반사율을 3%이하까지 낮출 수 있다는 것을 확인하였고, SEM장비를 이용하여 표면 상태를 알아보았으며. Essential Macleod 광학디자인 프로그램을 이용한 시뮬레이션 결과와 일치함을 확인하였다. 본 연구결과를 이용하면 다층박막 대신 단층 반사방지막을 제작하여 경제적이고, 효과적인 반사방지막을 제작할 수 있다.

• 접착 및 계면
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• 제20권1호
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• pp.1-8
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• 2019

균일한 단일층(monolayer)의 형성은 박막 두께에서의 특성을 유지하면서 차광, 반사방지 등의 물리적, 화학적 기능을 강화할 수 있는 중요한 수단이다. 이전 연구에서도 여러 코팅 방법으로 단일층을 구현하였으나, 공정이 복잡하고 대면적화 하는데 어려움이 있었다. 이에 본 연구에서는 소량의 용액으로 대면적 코팅이 가능한 로드 (rod) 코팅법을 사용하여, $20cm{\times}20cm$ PET 필름 기판 위에 마이크로미터 크기의 PMMA 비드를 가장 치밀한 형태인 HCP(hexagonal closed packing)가 되도록 코팅을 진행하였다. 끓는점과 증기압이 다른 용매의 사용과 계면활성제의 적용, 플라즈마 처리를 통한 기판 에너지의 변화를 통해 형성되는 단일층의 수준을 관찰하였다. 본 연구를 통해 비드의 메니스커스, 용매와 비드의 인-척력, 표면에너지를 포함한 코팅 조건을 최적화함으로써, 최종적으로 단위면적당 비드가 차지하는 정도인 입자의 커버리지를 초기 대비 약 20% 정도 향상시켰고, 단일층에 영향을 주는 인자들을 확인하였다. 본 결과는 기존에 연구되었던 코팅 방법에 비해 간단하고 빠르게 대면적의 단일층(monolayer)을 형성할 수 있기 때문에, 광학필름과 센서 등 첨단 분야로의 잠재적 응용 가능성이 높다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.116-117
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• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.