• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• 센서학회지
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• 제24권4호
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• pp.264-269
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• 2015

An infrared (IR) bolometer measures the change of resistance by absorbing incident IR radiation and generates a signal as a function of the radiation intensity. Since a bolometer requires temperature stabilization and light filtering except for the infrared rays, it is essential for the device to be packaged meeting conditions that above mentioned. Minimization of heat loss is needed in order to stabilize temperature of bolometer. Heat loss by conduction or convection requires a medium, so the heat loss will be minimized if the medium is a vacuum. Therefore, vacuum packaging for bolometer is necessary. Another important element in bolometer packaging is germanium (Ge) window, which transmits IR radiation to heat the bolometer. To ensure a complete transmittance of IR light, anti-reflection (AR) coatings are deposited on both sides of the window. Although the transmittance of Ge window is high for IR rays, it is difficult to use frequently in low-price IR bolometer because of its high price. In this paper, we fabricated IR window by utilizing silicon (Si) substrate instead of Ge in order to reduce the cost of bolometer packaging. To enhance the IR transmittance through Si substrate, it is textured using Reactive Ion Etching (RIE). The texturing process of Si substrate is performed along with the change of experimental conditions such as gas ratio, pressure, etching time and RF power.

• 천문학논총
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• 제20권1호
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• pp.151-161
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• 2005

The reimaging optics of the KASINICS (KASI Near Infrared Camera System) includes many transparent components like an entrance window, band-pass filters, and blocking filters. As observational targets or in-field background objects, bright stars may cause optical ghosts that can significantly degrade the system performance of the KASINICS. We estimated analytically the relative brightness of ghost components with respect to a point source and examined the effects of tilting optical components as a method of suppressing ghosts. We also performed numerical ray tracings including all the optical components and found the results are consistent with those of the analytic estimations. We conclude that the KASINICS will not suffer from significant ghost effects with appropriate anti-reflection coatings and fittings for the optical components.

• 전자공학회논문지A
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• 제31A권2호
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• pp.88-93
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• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• 한국광학회지
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• 제9권6호
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• pp.380-384
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• 1998

최근 고출력 에너지를 가진 레이저가 개발됨에 따라 레이저에 사용되는 반사경은 높은 열충격에도 견디며 효율적으로 냉각되어야 하므로 열확산도가 큰 광학박막의 연구가 중요하다. 본 연구에서는 굴절률이 다른 두 물질 MgFz와 ZnS의 증착 속도를 10$\AA$/s, 20$\AA$/s로 하고, 증착시 기판온도를 5$0^{\circ}C$, 10$0^{\circ}C$, 15$0^{\circ}C$, 20$0^{\circ}C$로 각각 다르게 하여 2층의 무반사막을 증착한 후 광음향효과를 이용하여 박막면에 수직한 방향의열확산도를 측정하였다. 시편 설계시 각 물질의 광학적 두께는 광원인 Ar+ 레이저(λ=514.5 nm)광에 대하여 MgFz 는 5/4λ이고, ZnS 는 λ가 되도록 하였고, 제작된 시료에 입사하는 광의주파수를 변화시키며 시료에서 발생되는 광음향신호의 크기를 측정하여 증착조건이 다를 때의 열확산도를 구하였다. 그 결과 증착속도가 10$\AA$/s 일 때와 기판온도가 15$0^{\circ}C$일 경우에 열확산도가 가장 큰 값을 나타내었다.

• 한국광학회지
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• 제16권6호
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• pp.553-559
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• 2005

(110) ZnTe 결정을 사용한 광정류(Optical Rectification)법에 의한 테라헤르츠파의 발생과 자유공간 전광 샘플링(Free-Space Electro-Optic Sampling; FS-EOS)법에 의한 테라헤르츠파의 검출특성에 대해서 보고한다. ZnTe 결정에 펌프용 레이저광에 대한 반사방지막 코팅을 실시함으로서 테라헤르츠파 신호크기가 $27\%$ 증가함을 알 수 있었다. ZnTe 결정의 두께가 얇을수록 테라헤르츠파의 신호의 크기는 작으나 광대역의 주파수를 가진 스펙트럼이 얻어졌다. 또한 레이저광의 편광방향과 ZnTe 결정의 (001)축사이의 각도에 따른 테라헤르츠파의 신호 변화, 펌프광 출력에 따른 테라헤르츠파의 신호크기 변화 등에 대한 특성이 조사되었다.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

• 디지털융복합연구
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• 제16권10호
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• pp.357-366
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• 2018

본 연구는 수형자 교정에 대한 개념분석을 통해 그 속성을 파악하고 개념을 명확히 하여 간호중재프로그램 개발시 기초자료를 제공하기 위함이다. 2011년에서 2015년까지 발표된 국내외 수형자 교정에 대한 연구문헌을 PubMed, NDSL RISS을 이용하여 2016년 4월 1일부터 7월 30일까지 검색하였다. 37편의 문헌을 Walker와 Avant의 개념분석방법 절차에 따라 분석하였다. 수형자 교정의 속성은 응보, 자기성찰, 긍정적인 문제해결, 재사회화로 나타났다. 수형자 교정의 정의는 법에 위반되는 반사회적이고 반도덕적인 행위로 교정시설에 수용된 수형자를 대상으로 과학적이고 개별화된 형벌을 집행하고, 수형자의 내면적 성찰을 통해 삶에 대한 긍정적인 태도를 지니게 할 뿐만 아니라 개별적 특성을 고려한 서비스 제공으로 문제해결과 사회적응능력의 향상, 신체적 정신적 건강의 조화를 통한 재사회화와 범죄로부터 국민과 사회를 안전하게 보호하는 것이었다. 본 연구는 수형자 교정의 바람직한 방향을 설정하고, 치료적 교정을 위한 간호중재프로그램 개발 시 이론적 근거를 제공하였다.