• 한국물환경학회지
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• 제31권4호
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• pp.360-366
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• 2015

In this study $TiO_2$ nanotube was grown on Ti by anodic oxidation to be used as a photocatalyst. The growth and formation of $TiO_2$ nanotube was monitored during anodization in ethylene glycol electrolyte by changing voltage and composition of electrolyte. Commercially available titanium plate (purity>99.8%, thickness:1mm) Applied voltage and concentration of $NH_4F$ and $H_2O$ were varied to find the optimum condition. Applied voltage is important to make $TiO_2$ nanotube and the electrolyte containing ethylene glycol, 0.2 wt% $NH_4F$ and 2 vol% $H_2O$ was confirmed to be the optimum conditions for the formation and growth of $TiO_2$ nanotubes.

• 한국수소및신에너지학회논문집
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• 제22권5호
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• pp.656-662
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• 2011

The purpose of this study was to correlate between photoelectrochemcial hydrogen production rate and electron transfer with various types of metal doped $TiO_2$ nanotubes as photoanodes. In order to fabricate light sensitized photoanode, CdS, $WO_3$, and Pt were doped by electrodeposition method. As the results of experiments, the electron transfer was favorable from higher position to lower position of conduction band (CB). In consequence, the higher hydrogen production rate was as follows, CdS/$TiO_2$ (100 $umol/hr-cm^2$) > $WO_3/TiO_2$ (20 $umol/hr-cm^2$) > Pt/$TiO_2$ (10 $umol/hr-cm^2$). The surface characterizations exhibited that crystal structure, morphological and electrical properties of various metal depoed $TiO_2$ nanotubes by the results of SEM, TEM, XPS, and photocurrent measurements.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1397-1400
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• 2013

The influence of electron beam irradiation on photocatalytic activity of $TiO_2$ thin films was investigated. $TiO_2$ thin films were prepared by anodization of Ti foil, and they were then subjected to an 1 MeV electron beam. Changes in physical properties and photocatalytic activity of $TiO_2$ before and after e-beam irradiation were investigated. The crystallinity of the synthesized materials was investigated by X-ray diffraction, and the oxidation states of both titanium and oxygen were determined by X-ray photoelectron spectroscopy (XPS). The density of donor ($N_d$) and flat band potential ($E_{fb}$) were investigated by Mott-Schottky analysis, and photocurrent was measured under a 1kW Xenon lamp illumination. After e-beam irradiation, significant change of Ti oxidation state was observed. $Ti^{3+}/Ti^{4+}$ ratio increased mainly due to the surface reduction by electron, and photocurrent was observed to increase with e-beam irradiation.

• 한국재료학회지
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• 제12권5호
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• pp.353-358
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• 2002

The microstructure and growth behaviors of anodic oxide layers on titanium were investigated. $TiO_2$ oxide films were prepared by anodizing at constant voltages of 180 and 200V in sulfuric acid electrolyte. The anodic $TiO_2$ layer formed at 200V showed a cell structure with more irregular pore shapes around the interface between the anodic oxide layer and the substrate titanium compared with that formed at 180V. Irregular shape of pores at the initial stage of anodization seemed to be attributed to spark discharge phenomena which heavily occurred during increasing voltages. The thickness of the anodic oxide film increased linearly at a rate of $1.9{\times}10^{ -1}\mu\textrm{m}$/min. The oxide layers formed at 180 and 200V were composed mainly of anatase structure, and the anodizing process could be suggested as one of fabrication methods of photocatalytic $TiO_2$.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.415-420
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• 2008

AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.112-112
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• 2015

The purposed of this work was to determine nanotube shape variation on the Ti-xNb alloys with alloying elements and applied potentials. Samples were prepared by arc melting, followed by followed by homogenization for 12 hr at $1000^{\circ}C$ in argon atmosphere. This study was evaluated the phase and microstructure of Ti-xNb alloys using an X-ray diffraction (XRD) and optical microscopy (OM). The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). The nanotube on the alloy surface was formed in 1 M $H_3PO_4$ with small additions of NaF 0.8 wt.%. All anodization treatments were carried out using a scanning potentiostat (Model 362, EG&G, USA) at constant voltage 30 V for 120 min, respectively. The morphology of the samples was investigated with a field-emission scanning electron microscope (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Surface characteristics of nanotbue formed on Ti-xNb alloys was investigated by potentiodynamic test and potentiostatic in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. It was observed that the changed ${\alpha}$ phase to ${\beta}$ phase with Nb content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.637-638
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• 2005

AAO templates were fabricated using a two-step anodization process with pretreatment such as electro polishing and annealing. To reduce process time and get well-aligned pore array, rapid thermal processor by an halogen lamp was employed in vacuum state at $500^{\circ}C$ for various time. The pore array of AAO template annealed at $500^{\circ}C$ for 2 h is comparable to a template annealed in conventional furnace at $500^{\circ}C$ for 30 h. The well-fabricated AAO template has the mean pore diameter of 70 nm, the barrierlayer thickness of 25 nm, and the pore depth of $9{\mu}m$. And the pore density can be as high as $2.0\times10^{10}cm^{-2}$.

• 한국재료학회지
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• 제12권7호
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• pp.540-544
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• 2002

Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.