• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• 열처리공학회지
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• 제17권4호
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• pp.223-229
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• 2004

The effects of the cooling and annealing conditions on the microstructures and corrosion properties were investigated for the Cu-contained Zr-Nb alloy (Zr-1.1Nb-0.07Cu). After annealing at $1050^{\circ}C$ for 15 min, the specimens were cooled by three methods of water quenching, air cooling, and furnace cooling. Widmanstatten structures were developed in both air- and furnace-cooled specimens, and the Widmanstatten plate width of the furnace-cooled specimens was wider than that of the air-cooled ones. The weight gain in the furnace-cooling case was higher than that in the air-cooling case. This could be the reason why the diffusion time was more enough during the furnace cooling than the air cooling. The oxide of the furnace-cooled specimen was nonunformly formed just beneath the Widmanstatten plate boundaries, where ${\beta}_{Zr}$ phases were exised concentrately. Compared with the $640^{\circ}C$ annealing after the water quenching, the $570^{\circ}C$ annealing could make the ${\beta}_{Nb}$ phases and a concomitant reduction of the Nb in the matrix, and then it could improve the corrosion resistance with the increase of the annealing time. It would be concluded that the corrosion resistance of the Zr-1.1Nb-0.07Cu was good when the Nb concentration in the matrix was reached at an equilibrium level and then the ${\beta}_{Nb}$ phase was formed.

• 전기전자학회논문지
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• 제28권1호
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• pp.104-109
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• 2024

본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga₂O₃/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga₂O₃/SiC 이종접합 소자의 전기적 특성에 미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N₂ 분위기에서 열처리된 소자에서 3.06 × 10^-2 A/cm²로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 10¹⁴ cm^-3로 증가하는 것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.

• 한국재료학회지
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• 제22권11호
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• pp.591-597
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• 2012

For heat exchanger applications, 2-ply clad materials were fabricated by rolling of aluminum (Al) and mild steel sheets. Effects of annealing temperature on interface properties, especially on inter-layer formation and softening of strain hardened mild-steel, for Al/mild steel clad materials, were investigated. To obtain optimum annealing conditions for the Al/mild steel clad materials, annealing temperature was varied from room temperature to $600^{\circ}C$. At the annealing temperature about $450^{\circ}C$, an inter-layer was formed in an island-shape at the interface of the Al/mild steel clad materials; this island expanded along the interface at higher temperature. By analyzing the X-ray diffraction (XRD) peaks and the energy dispersive X-ray spectroscopy (EDX) results, it was determined that the exact chemical stoichiometry for the inter-layer was that of $Fe_2Al_5$. In some samples, an X-layer was formed between the Al and the inter-layer of $Fe_2Al_5$ at high annealing temperature of around $550^{\circ}C$. The existence of an X-layer enhanced the growth of the inter-layer, which resulted in the delamination of the Al/mild-steel clad materials. Hardness tests were also performed to examine the influence of the annealing temperature on the cold deformability, which is a very important property for the deep drawing process of clad materials. The hardness value of mild steel gradually decreased with increasing annealing temperature. Especially, the value of hardness sharply decreased in the temperature range between $525^{\circ}C$ and $550^{\circ}C$. From these results, we can conclude that the optimum annealing temperature is around $550^{\circ}C$ under condition of there being no X-layer creation.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.138-141
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• 2008

The effects of annealing temperature and time on mechanical properties and microstructures were investigated in cold drawn pearlitic steel wires. During annealing, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. Since tensile strength and the occurrence of the delamination would be closely related to the dissolution of cementite, the lower annealing temperature and the increase of drawing strain caused the higher tensile strength and the easier occurrence of the delamination in cold drawn pearlitic steel wires.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.365-370
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

• 한국결정성장학회지
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• 제12권5호
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• pp.247-252
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• 2002

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) 박막을 초음파분무 MOCVD법으로 ITO-coated glass 기판 위에 제조하였다. PLT 박막 제조 시 후열처리 및 seeding layer가 결정화 및 미세구조, 전기적 특성에 대한 영향을 알아보았다. 후열처리에 의하여 박막의 결정성은 향상되었고 미세구조에도 영향을 주었으며, 전기적 특성은 이들 특성의 변화에 의해서 향상되었다. 그리고 seeding layer에 의한 핵 생성자리 제공에 의하여 결정성의 향상과 grain 크기의 증가에 의하여 박막의 전기적 특성 또한 향상되었다. Seeding layer를 가지고 60분 동안 후열처리를 한 박막이 가장 우수한 전기적 특성을 나타내었으며 이 박막의 1 kHz에서 유전 상수는 213을 나타내었다.

• 한국자기학회지
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• 제11권4호
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• pp.173-178
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• 2001

가스분무법으로 만든 MPP 압분자심을 무자장 및 자장중에서 열처리한 후 냉각속도를 달리할 때 얻어지는 자기적 특성의 변화를 조사하였다. 무자장중에서 열처리시 냉각속도가 증가하면 교류투자율 및 자심손실이 감소하였으며, 이는 각각 빠른 냉각속도에서의 불균일한 내부음력의 발생과 이상 와전류손실의 감소에 기인하는 것으로 해석되었다. 한편 MPP 압분체를 무자장 열처리 후 냉각속도를 달리하여도 Ni-Fe 합금에서 전형적으로 나타나는 규칙상의 형성에 따른 자기적 특성의 변화는 보이지 않았으나, 느린 냉각속도의 조건하에서 자장열처리를 하면 용이하게 구성원자의 방향성 규칙화에 의해 유도자기이방성이 생성되며 상당한 투자율 및 자심손실의 변화가 얻어지는 것으로 관찰되었다.

• 한국재료학회지
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• 제13권7호
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• pp.447-452
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• 2003

Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

• 한국세라믹학회지
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• 제37권2호
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.