• Journal of the Korean Society for Heat Treatment
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• v.19 no.5
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• pp.270-279
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and furnace atmosphere on the microstructure and hardeness were determined in SCM440 steel which has been widely used for automotive parts. The well-spheroidized structure and minimum hardness were obtained when the steel was heat-treated at $770^{\circ}C$ for 6 hours, cooled to $720^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $720^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate to the spheroidizing annealing. It was found that a cooling rate of $100^{\circ}C/hr$ was the fastest cooling rate applicable to the SCM440 steel among the four cooling rates used in this study. The microstructure consisted of ferrite and very fine spheroidized cementite when the steel was annealed for 13 hours at $720^{\circ}C$ below $A_{C1}$ temperature. This was caused by the short annealing time and the retarding effect of Cr and Mo on both the dissolution of pearlite to cementite and coarsening of spheroidized cementite. The steel heat treated in air showed the decarburized layer of about $125{\mu}m$ in thickness at the surface.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3312-3316
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• 2013

Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.316-321
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• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.43.1-43.1
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• 2007

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2679-2682
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• 2010

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.17-19
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• 2002

Melt textured YBCO superconductors were fabricated by the top seeding method using Sml.8($Sm_{1.8}$ $Ba_{2.4}$ $Cu_{3.4}$$O_{7-Y}$) seed. We investigated the twin structures using the optical microscope, SEM and TEM. The twin structures formed during the tetragonal to orthorhombic transition which occurred at $450^{\circ}C$ in sample oxygen annealing. The twin structures were clearly observed by SEM due to the chemical etching effects. The lengths of twin structures were increased as the oxygenation heat treatment time increased from 1hr to 10hr. We investigated twin structure by TEM. The twin spaces were considered to be related to the oxygen contents. The results suggested an oxygen diffusion model for the formation of the twin lengths.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1412-1413
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• 2011

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.26-32
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• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.76-79
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• 2012

$Tb_3Al_5O_{12}:Ce$ (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above $700^{\circ}C$ was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the $5d^1$ excited levels of Ce ion.