• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.49-49
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• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• 센서학회지
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• 제7권3호
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• pp.147-153
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• 1998

$Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$(N/O/N) 다이아프램과 결합된 고감도의 광섬유 Fabry-Peort 압력센서를 개발하여 스트레인 및 그 응답특성을 조사하였다. 먼저, 44 wt% KOH 수용액을 이용한 실리콘 이방성식각기술로 600 nm 두께의 N/O/N 다이아프램을 제조하였으며, 제조된 다이아프램과 광섬유 Fabry-Perot 간섭계를 결합하여 광섬유 압력센서를 구성하였다. 단일모드 광섬유(SMF)내에 $TiO_{2}$ 유전체 박막을 용융접합하여 공극의 길이가 약 2 cm인 광섬유 Fabry-Perot 간섭계를 제작하였다. 광섬유 Fabry-Perot 간섭계의 한쪽 끝은 N/O/N 다이아프램과 결합하였으며, 나머지 한쪽을 3 dB 광결합기를 통해 광측정장치에 연결하였다. $2{\times}2\;mm^{2}$ 및 $8{\times}8\;mm^{2}$ 크기의 N/O/N 다이아프램에 대해 응답특성을 조사한 결과, 각각 약 0.11 rad/kPa과 1.57 rad/kPa의 압력감도를 나타내었으며, 선형오차는 0.2 %FS이내였다.