• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Transactions of the Society of Information Storage Systems
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• v.2 no.4
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• pp.224-229
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• 2006

There has been studied flow to minimize the spot size to increase data capacity. Optical data storage devices are being developed near practical limits with wavelength and NA of 405nm and 0.85. There has been studied many types of next generation storage devices such as blu-ray multilayer system, probe based data storage and holographic data storage. Among these data storage devices, solid immersion lens(SIL) based near field recording (NFR) has been widely studied. In this system, SIL is the key component that focuses the laser beam with a very small size which enables ultra high data capacity. Therefore, optical performance evaluation system is required for SIL assembly. In this dissertation, a simple and accurate SIL assembly measurement method is proposed with wedge plate lateral shearing interferometer(LSI). Wedge plate LSI is cheaper than commercialized interferometer, robust to the vibration and the moving distance for phase shifting is large that is order of micrometer. We designed the thickness, wedge angle, material, surface quality and wavelength of wedge plate as 1mm, 0.02degree, fused silica, lamda/10(10-5) and 405nm, respectively. Also, we confirmed simulation and experimental results with quantitative analysis. This simple wedge plate LSI can be applied to different types of SIL such as solid immersion mirror(SIM), hemispherical, super-hemispherical and elliptical SIL.

• Korean Journal of Materials Research
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• v.31 no.7
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• pp.420-426
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• 2021

Graphene, a new material with various advantageous properties, has been actively used in various fields in recent years. Applications of graphene oxide are increasing in combination with other materials due to the different properties of graphene oxide, depending on the number of single and multiple layers of graphene. In this study, single-layer graphene oxide and multi-layer graphene oxide are spray coated on polystyrene, and the physicochemical properties of the coated surfaces are characterized using SEM, Raman spectroscopy, AFM, UV-Vis spectrophotometry, and contact angle measurements. In single-layer graphene oxide, particles of 20 ㎛ are observed, whereas a 2D peak is less often observed, and the difference in surface height increases according to the amount of graphene oxide. Adhesion increases with an increase in graphene oxide up to 0.375 mg, but decreases at 0.75 mg. In multi-layer graphene oxide, particles of 5 ㎛ are observed, as well as a 2D peak. According to the amount of graphene oxide, the height difference of the surface increases and the adhesive strength decreases. Both materials are hydrophilic, but single-layer graphene oxide has a hydrophilicity higher than that of multi-layer graphene oxide. We believe that multi-layer graphene oxide and single-layer graphene oxide can be implemented based on the characteristics that make them suitable for application.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.