• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.443-444
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• 2006

We present a low temperature thermal process for the color photoresist on the flexible substrate for the LCD color filter module by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional color photoresist. By this method the curing temperature can be lowered by more than $100^{\circ}C$, and the curing process time also can be shortening by more than 20 min.

• Information Display
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• v.14 no.4
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• pp.11-22
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• 2013

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1112-1114
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• 2009

In this paper, we have studied manufacturing process for liquid crystal displays (LCDs) using plastic substrates. Because the thermal and dimensional stabilities of plastic substrates are decisive issues, both the process and materials were improved to fit the manufacturing requirements of flexible twisted-nematic (TN) and color super-twisted nematic (CSTN) LCDs. Finally, to broaden the flexible display applications, we take advantage of the unique properties of flexible display to design several innovative products.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.348-351
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• 2007

A pure polyimide substrate and polyimide substrate with nano-silica additive have been formed on glass by coating. The a-Si:H TFT arrays have been formed on such polyimide substrate for driving TNLCD.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.76.1-76.1
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• 2013

Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

• Journal of IKEEE
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• v.21 no.1
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• pp.85-88
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• 2017

This study focused on the development of in-situ passivation system and characterization of OLED display. The thin film passivation process with thin film layers was investigated using in-situ passivation technique in the cluster system. Thin films of $SiO_2$, SiNx passivation were manufactured using PECVD, which enables the deposition process at room temperature. The cluster system was created to develop in-situ passivation process, which OLED and thin film were fabricated in the cluster system without exposing to the atmospheric environment. It is expected that the in-situ passivation system of OLED with organic and inorganic layer provides the leading technique to develop flexible OLED.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.49-54
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• 2021

The display industry is transitioning from traditional rigid products such as flat panel displays to flexible or wearable ones designed to be folded or rolled. Accordingly, colorless and optically transparent polyimide (CPI) films are one of the prime candidates to substitute traditional cover glass as a passivation layer to accommodate product flexibility. However, CPI films subjected to repetitive pure bending loads inevitably entail an accumulation of residual strain that can eventually cause wrinkles or delamination in the underlying component after a certain number of static and cyclic loading. The purpose of this study is to establish an experimental method to systematically evaluate the bending residual strain of CPI films. Films were monotonically and cyclically wrapped on mandrels of various diameters to ensure a constant strain in each. After unwrapping the wound CPI film, the residual radius of curvature remaining on the film was measured and converted into residual strain. The critical radius of curvature at which residual strain does not remain was about 5 mm, and the residual strain decreased in proportion to the log time. It is expected that flexible displays can be reliably designed using the data between the applied bending strain and the residual strain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.203-203
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• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.135-137
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• 2009

After setting the gold standard for both industrial dropon-demand inkjet printheads and R&D printers for functional materials printing, FUJIFILM Dimatix has developed a printhead with the highest jetting frequency ever obtained. Operating at 100 kHz, the MEMS fabricated SAMBA printhead expands the capabilities of fabrication methods for display applications.