• Title/Summary/Keyword: analog memory

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The Circuit Design for the DC Parameter Inspection of Memory Devices (메모리 소자의 DC parameter 검사회로 설계)

  • 김준식;주효남;전병준;이상신
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.1
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    • pp.1-7
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    • 2004
  • In this paper, we have developed the DC parameters test system which inspects the properties of DC parameters for semiconductor products. The developed system is interfaced by IBM-PC. It is consisted of CPLD part, ADC(Analog-to-Digital Converter), DAC(Digital-to-Analog Converter), voltage/current source, variable resistor and measurement part. In the proposed system, we have designed the constant voltage source and the constant current source in a part. In the comparison of results, the results of the simulation are very similar to the ones of the implementation.

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A Study on Width of Dummy Switch for performance improvement in Current Memory (Current Memory의 성능 개선을 위한 Dummy Switch의 Width에 관한 연구)

  • Jo, Ha-Na;Hong, Sun-Yang;Jeon, Seong-Yong;Kim, Seong-Gwon
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2007.04a
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    • pp.485-488
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    • 2007
  • 최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

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High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

  • Kang, Hee-Bok;Hong, Suk-Kyoung;Song, Yong-Wook;Sung, Man-Young;Choi, Bok-Gil;Chung, Jin-Yong;Lee, Jong-Wook
    • ETRI Journal
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    • v.30 no.6
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    • pp.826-832
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    • 2008
  • The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

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Development of a Flash ADC with an Analog Memory (아날로그메모리를 이용한 플레쉬 ADC)

  • Chai, Yong-Yoong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.4
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    • pp.545-552
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    • 2011
  • In this article, reference voltages in a general flash ADC are not obtained from a series of resistors but floating gates. When a behavior model simulation was performed in a pipelined ADC including the suggested flash ADC as a result of an ADC's overall function, it showed results that SNR is approximately 77 dB and resolution is 12 bit. And more than almost 90% showed INL within ${\pm}0.5$ LSB, and like INL, more than 90% showed DNL within ${\pm}0.5$ LSB.

Development of Independent BPM Control System Using Reflective Memory at PLS (포항가속기의 Reflective Memory를 이용한 독립형 BPM 제어시스템 개발)

  • Yoon, J.C.;Lee, J.W.;Lee, E.H.;Kang, H.S.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1697-1698
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    • 2008
  • PLS(Pohang Light Source) is 2.5 Gev synchrotron radiation source in Pohang, Korea, which is under operation since 1995. The hardware and software of the old BPM(Beam Position Monitor) data acquisition system for the PLS storage ring was completely upgraded to increase its performance and stability. The new BPM data acquisition system is based on VME-based EPICS (Experimental Physics and Instrument Control System) IOC system. We used 16-bit resolution analog-to-digital conversion board to digitize analog BPM signals. We developed a data average software to average raw BPM data using reflective memory board. We also developed device drivers for VME I/O boards used, IOC database for PV's(Process Variables). The new BPM data acquisition system is currently running for routine operation with good performance and stability. In this paper, we present the hardware and software of the new BPM data acquisition system DTL water skid cooling system and Resonant Control Cooling.

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An Analog Multi-phase DLL for Harmonic Lock Free (Harmonic Locking을 제거하기 위한 아날로그 Multi- phase DLL 설계)

  • 문장원;곽계달
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.281-284
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    • 2001
  • This paper describes an analog multi-phase delay-locked loop (DLL) to solve the harmonic lock problem using current-starved inverter and shunt-capacitor delay cell. The DLL can be used not only as an internal clock buffer of microprocessors and memory It's but also as a multi-phase clock generator for gigabit serial interfaces. The proposed circuit was simulated in a 0.25${\mu}{\textrm}{m}$ CMOS technology to solve harmonic lock problem and to realize fast lock-on time and low-jitter we verified time interval less than 40 ps as the simulation results.

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VLSI Implementation of Hopfield Neural Network (Hopfield 신령회로망의 VLSI 구현에 관한 연구)

  • 박성범;오재혁;이창호
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.30B no.11
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    • pp.66-73
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    • 1993
  • This paper presents an analog circuit implementation and experimental resuls of the Hopfield type neural network. The proposed architecture enables the reconfiguration betwewn feedback and feedforward networks and employs new circuit designs for the weight supply and storage, analog multilier, nd current-voltage converter, in order to achieve area efficiency as well as function al versatility. The layout design of the eight-neuron neural network is tested as an associative memory to verify its applicability to real world.

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Design of an Analog Array Using Floating Gate MOSFETs (부유게이트를 이용한 아날로그 어레이 설계)

  • 채용웅;박재희
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.10
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    • pp.30-37
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    • 1998
  • An analog array with a 1.2 $\mu\textrm{m}$ double poly floating gate transistor has been developed with a standard CMOS fabrication process. The programming of each cell by means of an efficient control circuit eliminates the unnecessary erasing operation which has been widely used in conventional analog memories. It is seen that the path of the signal for both the programming and the reading is almost exactly the same since just one comparator supports both operations. It helps to eliminate the effects of the amplifier input-offset voltage problem on the output voltage for the read operation. In the array, there is no pass transistor isolating a cell of interest from the adjacent cells in the array. Instead of the extra transistors, one extra bias voltage, Vmid, is employed. The experimental results from the memory shows that the resolution of the memory is equivalent to the information content of at least six digital cells. Programming/erasing of each cell is achieved with no detectable disturbance of adjacent cells. Finally, the unique shape of the injector structure in a EEPROM is adopted as a cell of analog array. It reduces the programming voltage below the transistor breakdown voltage without any special fabrication process.

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Implementation of Real Time Optical Associative Memory using LCTV (LCTV를 이용한 실시간 광 연상 메모리의 구현)

  • 정승우
    • Proceedings of the Optical Society of Korea Conference
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    • 1990.02a
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    • pp.102-111
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    • 1990
  • In this thesis, an optical bidirectional inner-product associative memory model using liquid crystal television is proposed and analyzed theoretically and realized experimentally. The LCTV is used as a SLM(spatial light modulator), which is more practical than conventional SLMs, to produce image vector in terms of computer and CCD camera. Memory and input vectors are recorded into each LCTV through the video input connectors of it by using the image board. Two multi-focus hololenses are constructed in order to perform optical inner-product process. In forward process, the analog values of inner-products are measured by photodetectors and are converted to digital values which are enable to control the weighting values of the stored vectors by changing the gray levels of the pixels of the LCTV. In backward process, changed stored vectors are used to produce output image vector which is used again for input vector after thresholding. After some iterations, one of the stored vectors is retrieved which is most similar to input vector in other words, has the nearest hamming distance. The experimental results show that the proposed inner-product associative memory model can be realized optically and coincide well with the computer simulation.

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A Design of Digital Radio Frequency Memory (디지털 고주파 기억장치 설계)

  • 김재준;이종필;최창민;임중수
    • Proceedings of the Korea Contents Association Conference
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    • 2004.05a
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    • pp.372-376
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    • 2004
  • Digital memory circuits have been developed very fast according to the progress of semiconductor technology But It was very difficult to memorize a high frequency radio signal. Many years ago an analog loop was used for store of radio frequency signal, and the digital radio frequency memory was made to the development of wideband amplifier and high speed sampler. We present a design of wide-band DRFM using Johnson code and the simulation results with respect to the sampling speed. in this paper.

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