• Title/Summary/Keyword: amorphous-Selenium

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Measurement of Drifting Mobility and Transit Time of Holes and Electrons in Stabilized a-Se Film

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.362-363
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    • 2007
  • The transport property of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices was studied using the moving photo-carrier grating (MPG) technique and time-of-flight (TOF) measurements. For MPG measurement, the electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. For TOF measurement, a laser beam with pulse duration of 5ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of $400{\mu}m$.

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Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.304.2-304.2
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    • 2014
  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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The signal property and structure design of CsI:Na/a-Se for diagnostic x-ray imaging (진단 X선 영상을 위한 CsI:Na/a-Se 구조설계 및 신호특성)

  • Park, Ji-Koon;Heo, Ye-Ji;Park, Jeong-Eun;Park, Sang-Jin;Kim, Hyun-Hee;No, Ci-Chul;Kang, Sang-Sik
    • Journal of the Korean Society of Radiology
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    • v.3 no.4
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    • pp.35-38
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    • 2009
  • Flat-panel x-ray detectors using a phosphor and photoconductor material have been used for application in various medical modalities. In this study, the monte carlo simulation, optical and x-ray response characteristics were investigated in the conversion structure obtained by a columnar CsI:Na scintillation layer with a photosensitive amorphous selenium layer. Firstly, from the measurement of luminescent spectrum of CsI:Na and absorption spectrum of a-Se layer, the signal conversion characteristics are analysed. And also, the x-ray sensitivity is measured and compared with conventional a-Se($500{\mu}m$) as a function of electrical field. From the experimental result, the x-ray sensitivities of the CsI:Na($180{\mu}m$)/a-Se($30{\mu}m$) detector and the a-Se($500{\mu}m$) detector were $7.31nC/mR-cm^{2}$ and $3.95nC/mR-cm^{2}$at an electric field of $10V/{\mu}m$, respectively.

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Study of The Amorphous Selenium (a-Se) using 2-dimensional Device Simulator (2차원 소자 시뮬레이터를 이용한 비정질 셀레늄(a-Se) 분석)

  • Kim, Si-Hyoung;Kim, Chang-Man;Nam, Ki-Chang;Kim, Sang-Hee;Song, Kwang-Soup
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.10
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    • pp.187-193
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    • 2012
  • Digital X-ray image detector has been applied for medical and industrial fields. Photoconductors have been used to convert the X-ray energy to electrical signal on the direct digital X-ray image detector and amorphous selenium (a-Se) has been used as a photoconductor, normally. In this work, we use 2-dimensional device (2-D) simulator to study about physical phenomena in the a-Se, when we irradiate electromagnetic radiation (${\lambda}=486nm$) on the a-Se surface. We evaluate the electron-hole generation rate, electron-hole recombination rate, and electron/hole distribution in the a-Se using 2-D simulator. This simulator divides the device into triangle and calculates using interpolation method. This simulation method has been proposed for the first time and we expect that it will be applied for the development of digital X-ray image detector.

Radiation detector material development with multi-layer by hetero-junction for the reduction of leakage current (헤테르접합을 이용한 누설전류 저감을 위한 다층구조의 방사선 검출 물질 개발)

  • Oh, Kyung-Min;Yoon, Min-Seok;Kim, Min-Woo;Cho, Sung-Ho;Nam, Sang-Hee;Park, Ji-Goon
    • Journal of the Korean Society of Radiology
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    • v.3 no.1
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    • pp.11-15
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    • 2009
  • In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

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Change of MTF for Sampling Interval in Digital Detector (디지털 검출기에서 샘플링 간격에 따른 MTF의 변화)

  • Cho, Hyungwook;Chon, Kwonsu
    • Journal of the Korean Society of Radiology
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    • v.8 no.5
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    • pp.225-230
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    • 2014
  • Assessments of medical image was improved in accordance with development of medical imaging systems. One of them is edge method to determining MTF(Modulation Transfer Function) based on the Fujita method. Fujita was reduced sampling interval used slightly angulated slit to the direction of pixel array and composited finely sampled LSF to determine presampling MTF. In this study, we investigate the effect of sampling interval on the MTF under a digital imaging system by changing wire angle. The wire method was equivalent to the slit method except signal appearance. A Simens's MAMMOMAT Inspiration with $0.085{\times}0.085mm^2$ pixel size made by amorphous selenium was used and 96% accuracy on MTF in twice sampling interval compared with Fujita was obtained. However, three times of sampling interval showed 93% accuracy on 50% of MTF and 85% accuracy on 10% of MTF.

Digital X-ray Imaging in Dentistry (치과에서 디지털 x-선 영상의 이용)

  • Kim Eun-Kyung
    • Journal of Korean Academy of Oral and Maxillofacial Radiology
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    • v.29 no.2
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    • pp.387-396
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    • 1999
  • In dentistry. RadioVisioGraphy was introduced as a first electronic dental x-ray imaging modality in 1989. Thereafter. many types of direct digital radiographic system have been produced in the last decade. They are based either on charge-coupled device(CCD) or on storage phosphor technology. In addition. new types of digital radiographic system using amorphous selenium. image intensifier etc. are under development. Advantages of digital radiographic system are elimination of chemical processing, reduction in radiation dose. image processing, computer storage. electronic transfer of images and so on. Image processing includes image enhancement. image reconstruction. digital subtraction, etc. Especially digital subtraction and reconstruction can be applied in many aspects of clinical practice and research. Electronic transfer of images enables filmless dental hospital and teleradiology/teledentistry system. Since the first image management and communications system(IMACS) for dentomaxillofacial radiology was reported in 1992. IMACS in dental hospital has been increasing. Meanwhile. researches about computer-assisted diagnosis, such as structural analysis of bone trabecular patterns of mandible. feature extraction, automated identification of normal landmarks on cephalometric radiograph and automated image analysis for caries or periodontitis. have been performed actively in the last decade. Further developments in digital radiographic imaging modalities. image transmission system. imaging processing and automated analysis software will change the traditional clinical dental practice in the 21st century.

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Characterization of $Cu_2ZnSnSe_4$ thin film produced by selenization of metallic precursor (금속 프리커서의 셀렌화에 의한 $Cu_2ZnSnSe_4$ 박막의 특성)

  • Amal, M. Ikhlasul;Alfaruqy, M. Hilmy;Jang, Yun-Jung;Kim, Kyoo Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.85.2-85.2
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    • 2010
  • $Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

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DR (Digital Radiography) 적용을 위한 Biology 초음파 특수용매를 이용한 $PbI_2$ 합성법

  • Kim, Seong-Heon;Yun, Min-Seok;O, Gyeong-Min;Kim, Yeong-Bin;Lee, Sang-Hun;Jo, Gyu-Seok;Park, Hye-Jin;Nam, Sang-Hui
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.146-146
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    • 2009
  • 최근에 광도전체와 형광체를 기반으로 평판형 디지털 방사선 검출기의 상업적 발전가능성에 많은 관심을 가지고 있다. 본 연구는 기존의 직접변환방식에 널리 사용되었던 비정질 셀레늄 (amorphous selenium) 기반의 디지털 방사선 검출기보다 높은 전기적신호 및 동작특성을 가지는 물질층을 제작하기 위해 High Purity (99.99%)의 상용화된 $PbI_2$를 특수용매에 담가두었다가 약 1시간동안 Biology 초음파 처리한 후 농축기를 사용하여 건조된 $PbI_2$를 3Roll-milling을 사용하여 미세크기의 Powder를 얻어내었다. 합성된 $PbI_2$ Powder를 PIB(Particle-in-Binder)법을 이용하여 전도성을 가진 ITO(Indium-tin-oxide)코팅된 유리판에 제작된 필름의 상부에 Magnetron sputtering system 을 사용하여 전극을 $1cm{\times}1cm$의 크기로 증착하였다. I-V 테스트를 통하여 X선 조사시 $PbI_2$필름의 Sensitivity, Dark current, SNR(signal-to-noise ratio)을 측정하여 필름의 전기적 검출 특성을 정량적으로 평가하였고 SEM(scanning electron microscope)을 통하여 입자의 크기를 관찰하였다.

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Digital X-ray Detector에 적용을 위한 Polycrystalline CdTe 구조에 따른 전기적 신호 연구

  • Kim, Jin-Seon;O, Gyeong-Min;Jo, Gyu-Seok;Song, Yong-Geun;Hong, Ju-Yeon;Heo, Seung-Uk;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.484-484
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    • 2013
  • 기존 진단용 Digital X-ray Detector이 직접방식에서는 a-Se (Amorphous Selenium)이 대중화되었지만 고전압을 인가하여야한다는 점과 그로 인한 물질 자체의 Life time 감소 등 여러 단점들 때문에 기타 후보물질들로 HgI2, PbI2, PbO, CdTe, CdZnTe가 연구 되고 있다. 이러한 후보 물질들 중 본 연구에서는 PVD (Physical Vapor Deposition)방식을 이용하여 Polycrystalline CdTe 박막을 제작하고 특성 향상을 위해 유전물질을 Passive layer와 Protect layer로써 증착하였다. 또한 유전체층의 위치에 따른 특성 분석을 위해 제작된 박막은 FE-SEM (Field Emission Scanning Electron Microscope), XRD (X-ray Diffraction)을 통해 구조적인 특성을 확인하였다. 그리고 입사되는 X-ray 선량에 의해 생성되는 전기적 특성을 분석하였다, 그 결과 박막의 Grain Size는 약 $5{\mu}M$이며 (111)방향의 주 peak를 띄는 Poly CdTe형태로 증착된 것을 확인하였다. 전기적인 신호 결과 Passive layer와 Protect layer를 증착한 박막 모두 Darkcurrent가 감소된 것을 확인하였다. 또한 Sensitivity 측정 결과 Passive layer를 삽입한 경우 신호 값이 감소하였으며 Protect layer를 삽입한 경우 신호 값의 변화가 일어나지 않았다. 그러므로 Protect layer를 등착한 박막의 경우 SNR이 현저히 높아지는 결과를 낳았다.

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