• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.282-283
• /
• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.252-253
• /
• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.501-504
• /
• 1987

The photoconductor is made of evaporated amorphous selenium as the base material, doped with arsenic and tellurium to prevent crystallization and to increase the red sensitivity of the amorphous selenium. The four-layered photoconductor of Se-As-Te has good photosensitivity(r=0.9) and high dark resistivity($P_d=10^{12}{\Omega}{\cdot}cm$). therefore, this four-layered photoconductor can be used for the target of color image pick-up tube.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.04a
• /
• pp.85-88
• /
• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.205-205
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.120-120
• /
• 2002

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.128-128
• /
• 2002

• Journal of radiological science and technology
• /
• v.34 no.1
• /
• pp.9-15
• /
• 2011

In this paper, an image quality evaluation of amorphous selenium based x-ray system was performed using modulation transfer function (MTF) measurement. MTF as a main factor of imaging quality evaluation was investigated by contrast method from acquired test pattern image. The MTF value was measured to 36.1% at 3.0 lp/mm which is twice as high as that in the film image. Compared with other studies, the results demonstrate that amorphous selenium based x-ray detector is clinically meaningful.

• Korean Journal of Digital Imaging in Medicine
• /
• v.6 no.1
• /
• pp.24-30
• /
• 2003

Flat-panel detector(FPD) is the driving force for realizing the next gene ration of x-ray system. In this study, we developed amorphous selenium(a-Se) based flat-panel digital X-ray detector(DXD) for radiography. The prototype detector consists of an amorphous selenium layer and a thin-film transistor(TFT) array. Comparing to other papers1)-4), optimization of amorphous selenium and progress of evaporation were similar. The pixel pitch of fabricated detector was $139{\mu}m$, fill factor was 86%, and the size was 14"${\times}$8.5". Hand and test bar pattern images were acquired. A high modulation transfer function(MTF) factor was obtained: 58% at 3.0 lp/mm.

• Journal of Biomedical Engineering Research
• /
• v.28 no.2
• /
• pp.300-305
• /
• 2007

In this study, we have studied the fabrication and the performance evaluation of digital radiation detector of the based on selenium (a-Se) prototype which is widely researched about recently. The detector was fabricated using amorphous selenium in the specification of active area size $7{\times}8.5"$, pixel pitch $139{\mu}m$, and 12 bit ADC. In order for the performance evaluation of the fabricated detector, we used radiation quality RQA 5 that is suggested by the International Electrotechnical Commission (IEC), and evaluated modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). Concerning MTF measurement, we used slit camera (Nuclear Associates, Model : 07-624-2222), and evaluated in the slit method. Also so as to compare the performance evaluation on the detector fabricated in this study, we used Hologic Direct-Ray (DR-1000) and GE Revolution XQ/I system, and evaluated and compared in the same method MTF, NPS, and DQE which are image quality factors. And as a result, the MTF of each detector In Nyquist frequency were evaluated to be 58% (at 3.5 lp/mm) in the case of DR-1000 and 65% (at 2.5 lp/mm) in the case of XQ/I, and that for the detector fabricated in this study was evaluated to be 36% (at 3.51 lp/mm). Also in the case of DQE(0), the detector fabricated in this study, DR-1000 of Hologic company, and XQ/I system of GE company respectively were evaluated as 36%, 32%, and 50%.