• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.501-504
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• 1987

The photoconductor is made of evaporated amorphous selenium as the base material, doped with arsenic and tellurium to prevent crystallization and to increase the red sensitivity of the amorphous selenium. The four-layered photoconductor of Se-As-Te has good photosensitivity(r=0.9) and high dark resistivity($P_d=10^{12}{\Omega}{\cdot}cm$). therefore, this four-layered photoconductor can be used for the target of color image pick-up tube.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.205-205
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.120-120
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.128-128
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• 2002

• 대한방사선기술학회지:방사선기술과학
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• 제34권1호
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• pp.9-15
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• 2011

본 논문은 현재 임상에서 사용되고 있는 비정질 셀레늄을 이용한 평판형 X선 영상 검출기를 통해 획득된 영상의 변조전달함수(MTF)에 대한 정량적인 값을 도출하였다. 영상 질(quality)의 주요변수인 MTF의 측정은 먼저 test pattern 영상을 획득한 다음, contrast method를 이용하여 공간주파수(spatial frequency)에서의 line profile을 디지털 값으로 획득하여 MTF를 계산하였다. 측정 결과, test pattern 영상에서 3.0 lp/mm에서 36.1%의 MTF 값을 나타냈으며, 종래의 필름 영상보다 약 2배 높은 해상력을 가짐을 알 수 있었다. 측정된 값은 비정질 셀레늄을 이용한 직접방식의 디지털 방사선 검출기의 임상적 사용가치가 충분함을 뒷받침 할 수 있는 기초 자료로서 제공될 수 있을 것으로 판단된다.

• 대한디지털의료영상학회논문지
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• 제6권1호
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• pp.24-30
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• 2003

평판 digital x-선 검출기는 차세대 x-ray system으로 최근 연구와 개발이 활발하게 진행되고 있는 system이다. 본 연구는 환자의 피폭 및 작업 종사자의 피폭을 최소화 할 수 있고 의료장비의 디지털화에 발맞추어 PACS 등에 사용 가능한 a-Se을 이용한 직접방식의 digital x-선 검출기 구현에 관한 것이다. Prototype digital x-선 검출기는 TFT층과 a-Se층으로 이루어져 있다. Digital x-선 검출기센서 증착과 정의 최적화 수행 결과를 참고문헌1)-4)과 비교했을 때 매우 유사함을 확인하였다. 제작된 검출기의 pixel pitch는 $139{\mu}m$였고, fill factor는 86%, 전체 검출기의 검출면적은 14"${\times}$8.5"였다. Digital 영상의 해상력을 고려하기 위해 손과 test 패턴영상을 얻었고, 58%, 3.0lp/mm의 높은 MTF를 얻을 수가 있었다. 이러한 결과로 a-Se 기반의 Digital X선 검출기가 구현되었으며 본 연구결과를 토대로 향후 digital X선 검출기 개발기술의 발전과 성능향상을 가져올 것으로 기대된다.

• 대한의용생체공학회:의공학회지
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• 제28권2호
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• pp.300-305
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• 2007

In this study, we have studied the fabrication and the performance evaluation of digital radiation detector of the based on selenium (a-Se) prototype which is widely researched about recently. The detector was fabricated using amorphous selenium in the specification of active area size $7{\times}8.5"$, pixel pitch $139{\mu}m$, and 12 bit ADC. In order for the performance evaluation of the fabricated detector, we used radiation quality RQA 5 that is suggested by the International Electrotechnical Commission (IEC), and evaluated modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). Concerning MTF measurement, we used slit camera (Nuclear Associates, Model : 07-624-2222), and evaluated in the slit method. Also so as to compare the performance evaluation on the detector fabricated in this study, we used Hologic Direct-Ray (DR-1000) and GE Revolution XQ/I system, and evaluated and compared in the same method MTF, NPS, and DQE which are image quality factors. And as a result, the MTF of each detector In Nyquist frequency were evaluated to be 58% (at 3.5 lp/mm) in the case of DR-1000 and 65% (at 2.5 lp/mm) in the case of XQ/I, and that for the detector fabricated in this study was evaluated to be 36% (at 3.51 lp/mm). Also in the case of DQE(0), the detector fabricated in this study, DR-1000 of Hologic company, and XQ/I system of GE company respectively were evaluated as 36%, 32%, and 50%.