• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.28.1-28.1
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• 2011

We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.118.2-118.2
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• 2016

3D NAND 제조에 있어 high-aspect-ratio etch 공정을 견뎌낼 수 있는 hardmask 소재로서 amorphous carbon layer (ACL) 가 각광받고 있으며 hardmask로서의 특성을 향상시키기 위해 다양한 연구가 진행중에 있다 [1]. 본 연구팀의 기존 연구에서 질소 및 붕소 doping 된 ACL 박막의 etch rate 및 Raman 분석을 통해 박막 특성을 확인한 바 있었으나, 공정 중 arcing이 일어나는 등 의도치 않은 문제로 인해 공정 최적화에 일부 문제가 존재하였다. 본 연구에서는 plasma enhanced chemical vapor deposition (PECVD) 공정을 통해 C6H12 기체 및 doping을 위한 NH3 와 B2H6 두 기체를 이용하여 특성 개선된 ACL을 증착하는 과정에서 발생하는 arcing 및 증착 특성을 규명하고자 진공 내 입자의 수농도를 실시간 측정할 수 있는 particle beam mass spectrometer(PBMS)를 적용, 특정 공정 사건 진단 및 해당 사건에서 발생하는 입자를 분석, 증착된 박막의 Raman spectroscopy 결과와 비교 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.335-335
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• 2011

Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• 공업화학
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• 제19권3호
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• pp.322-325
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• 2008

3,3-Dimethyl-1-butene ($C_6H_{12}$) 모노머를 PECVD 증착하였다. 비정질 탄소막은 FT-IR 스펙트럼에서 R.F.전력/압력비가 증가할수록 수소의 함유량과 dangling bond가 감소되고 막의 기계적 특성은 밀도가 상승함으로써 비례하여 향상되었다. 또한 Raman 스펙트럼에서 D 피크가 증가하였고 고리구조의 막을 형성하였다. 따라서 경도와 모듈러스가 각각 12 GPa과 85 GPa였다. 증착된 막의 굴절률(n)과 흡광계수(k)는 전력/압력비가 상승할수록 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.303.1-303.1
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• 2016

Polymer-like amorphous carbon films were deposited on polyethylene naphthalate (PEN) substrate by plasma-enhanced chemical vapor deposition (PECVD) and their water vapor transmission rates (WVTR) were tested. propane was used as precursors. To make a polymer-like amorphous carbon film the deposition rate, surface roughness, light transmittance, and WVTR of the films were characterized as a function of the precursor feed ratio and plasma power. The water vapor transmission rates of bare PEN film and single layer PAC on PEN substrate were 6.95 g/m2/day and 0.3 g/m2/day, respectively. The superior property the water vapor permeability of thin layers of PAC was attributed to uniform coverage and good adhesion between PAC film and PEN substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.330-333
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• 2005

We investigated the liquid crystal (LC) alignment phenomena using a-C:H and a-C:F:H thin films. Homogeneous alignment is obtained using ion beam treated hydrogenated amorphous carbon (a-C:H) thin films. Homeotropic alignment is obtained using F treated a-C:H thin films, namely, fluorinated amorphous carbon (a-C:F:H) thin films. We investigated the relationship between the surface properties of amorphous carbon based alignment layer and LC alignment phenomena.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.83-87
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• 2003

Thin films of amorphous carbon (a-C) generally combine high wear resistance with low friction coefficients and a-C films have widespread applications as protective coatings and passivation of electrical circuit and insulating layer. In this work we deposited the amorphous carbon (a-C) films on silicon substrate with a high rate DC magnetron sputtering system. It is obtained parameters on the deposition rate and physical properties of a-C films using a wide range of Ar gas pressure and DC power. The physical properties of the films were analyzed by Nanoindenter and AFM (Atomic Force Microscopy), The electrical properties were investigated by electrical conductivity measurement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.