• 한국결정성장학회지
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• 제24권5호
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• pp.202-206
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• 2014

$V_2O_5$ 박막에서의 PL 특성을 조사하기 위해 RF 스퍼터링법을 이용하여 비정질과 결정질 $V_2O_5$ 박막을 제작하였고, 10~300 K의 온도까지 PL 스펙트럼을 측정하였다. 상온에서 성장된 비정질 박막에서는 ~505 nm를 중심으로 하는 하나의 PL 피크만이 관찰되었고, 결정질 $V_2O_5$ 박막에서는 505 nm를 중심으로 하는 피크와 산소결함에 의한 것으로 알려진 ~695 nm를 중심으로 하는 피크가 관찰되었다. 비정질과 결정질 $V_2O_5$ 박막에서 관찰되는 505 nm에서의 PL 피크의 위치는 온도에 강한 의존성을 보였고, 그 값은 300 K에서 2.45 eV였고, 10 K에서 2.35 eV였다. 505 nm에서의 PL은 $V_2O_5$에서의 밴드 에너지 전이에 의한 것이었으며, 또한 온도의 감소에 따른 피크 위치 에너지의 감소는 전자-포논 상호작용의 감소에 의한 격자팽창효과의 감소 때문이었다.

• 한국재료학회지
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• 제8권7호
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• pp.621-627
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• 1998

단결정 Si(100) 기판과 비정질 Si 기판위에 Co/Zr 이중층을 이용하여 형성시킨 Co 실리사이드의 성장 거동에 대하여 연구하였다. 전자빔 증착기를 사용하여 단결정과 비정질 Si 기판위에 Zr $50\AA$과 Co $100\AA$을 차례로 증착한 박막을 50$0^{\circ}C$부터 $800^{\circ}C$까지 $100^{\circ}C$ 간격으로 질소 분위기에서 30초 동안 급속열처리를 하여 Co 실리사이드를 형성시켰다. 각 온도에서 열처리된 시편의 상형성, 화학적 조성, 계면의 형상, 전기적 특성을 XRD, AES, RBS, TEM, HRTEM 등으로 분석하였다. 분석 결과 $CoSi_2$ 상이 단결정 기판에서는 $700^{\circ}C$ 이상에서 기판과 정합성장을 하였고 비정질 기판에서는 다결정 성장을 하였으며 Co 실리사이드의 상형성 온도는 단결정 기판에서보다 비정질 기판에서 $100^{\circ}C$정도 낮아졌다. $CoSi_2$와 같은 Co rich 중간상은 두 기판 모두 형성되지 않았으며 초기 Co 실리사이드의 상형성 온도는 Co 단일층으로 상을 형성시킬 때 보다 더 높았다. Co 실리사이드와 Si 기판의 계면의 형상은 단결정 기판의 경우보다 비정질 기판에서 더 균질하였다. 박막의 면저항은 $600^{\circ}C$이하의 열처리 온도에서는 비정질 기판에서 형성된 Co 실리사이드 박막이 더 낮은 값을 나타내었고 그 이상의 열처리 온도에서는 단결정 기판에서 형성된 박막의 면저항값이 더 낮은 값을 나타내었으며 두가지 기판에서 형성된 박막 모두$ 800^{\circ}C$에서 가장 낮은 면저항 값을 보였다.TEX>$10^{-8}$ A/$\textrm{cm}^2$로 양질의 SrTiO$_3$박막을 제조하였다.는 과정에서 전세계 수준에서 멸종위기 식물을 목록화가 필요하다. 특히, 목록 작업이 완성되면 해당 분류군에 대한 기본적인 자료 수집과 장단기 조사과정으로서, 해당 분류군에 대한 멸종위협 요인을 수집하고, 이 자료를 근간으로 정량적으로 IUCN 적색목록 평가방식이 추진할 필요가 있다.he oscillations are active in the derived unit hydrograph. 3)The parameter estimates are validated by extending the model to the Soyang river Dam site with elimination of the autocorrelation in the disturbances. Finally, this paper illustrates the application of the multiple regression model to drive an optimal unit hydrograph dealing with the multicollinearity and the autocorrelation which cause some problems. 우선적으로 고려하여 사용할 농약을 선택해야 할 것으로 보이나, 그 외 약제의 잔류성, 사용량, 사용시기와 함께 기후조건, 토양의 투수성, 토층이 깊이, 지하수 깊이 등의 지역적인 특성들이 농약의 용탈잠재성에 미치는 영향도 더욱 구체적으로 파악되어야 할 것이며 농약의 선택 과정에서도 이러한 특성들이 앞으로 고려되어야 할 것이다.calenol 및 citrostadienol 등이 함유(含有)되어 있었다. 6. 4-desmethylsterol fraction에 는 sitosterol (74.6%)이

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 첨단 분리막 연구동향
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• pp.77-102
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• 2004

Carbon materials obtained from organic polymers are usually amorphous structure. The structure of carbon materials is not nearly as well defined as that of zeolite. Carbon are amorphous materials with comparatively wide pore size distribution as compared to the crystalline zeolites with monodisperse ultramicropore and micropore dimensions. (omitted)

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.488-493
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• 2023

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

• 열처리공학회지
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• 제8권3호
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• pp.236-243
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• 1995

Since amorphous alloys have been known to have better mechanical and chemical properties than crystalline alloys of the same composition, a great number of studies on the formation of Al-based amorphous alloys have been carried out actively. However, little has been obtained about the effect of Rare-Earth metal and Transition metal addition on amorphous phase formed by melt spinning method. This study included fabrication of amorphous alloy $Al_{85}Ce_5Ni_{10}$ by melt spinning methods and DTA, XRD, TEM analysis to determine crystalization behavoir. Annealing treatments were carried out in Ar atmosphere under isothermal and nonisothermal conditions. The diffraction pattern of non-heated ribbons showed broad form characteristic of glass metallic alloy. The crystallization of amorphous $Al_{85}Ce_5Ni_{10}$ takes place eutedtoidly by homogeneous formation of Al and MS-1, followed by precipitation of the $Al_{11}Ce_3$ and later $MS-1{\rightarrow}Al_3Ni$ transformation.

• Current Photovoltaic Research
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• 제1권1호
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Journal of Magnetics
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• 제3권2호
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• pp.55-63
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• 1998

Magnetic and magnetostrictive properties of amorphous Sm-Fe and Sm-Fe-B thin films are systematically investigated over a wide composition range from 14.1 to 71.7 at.% Sm. The films were fabricated by rf magnetron sputtering using a composite target composed of an Fe (or Fe-B) plate and Sm chips. The amount of B added ranges from 0.3 to 0.8 at. %. The microstructure, examined by X-ray diffraction, mainly consists of an amorphous phase in the intermediate Sm content range from 20 to 45 at.%. Together with an amorphous phase, crystalline phases of Fe and Sm also exist at low and high ends of the Sm content, respectively. Well-developed in-plane anisotropy is formed over the whole compositionrange, except for the low Sm content below 15 at.% and the high Sm content above 55 at %. As the Sm content increases, the saturation magnetization decreases linearly and the coercive force tends to increase, with the exception of the low Sm content where very large magnitudes of the saturation magnetization and the coercive force are observed due to the existence of the crystalline $\alpha$-Fe phase. The coercive force is affected rather substantially by the B addition, resulting in lower values of the coercive force in the practically important Sm content range of 30 to 40 at.%. Good magnetic softness indicated by well-developed in-plane anisotropy, a square-shaped hysteresis loop and a low magnitude of the coercive force results in good magnetostrictive characteristics in both Sm-Fe-B thin films. The magnetostrictive characteristics, particularly at low magnetic fields, are further improved by the addition of B; for example, at a magnetic field of 100 Oe, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film.

• 한국재료학회지
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• 제14권7호
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• pp.477-481
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• 2004

High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.1-347.1
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• 2016

Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

• 한국분말재료학회지
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• 제12권6호
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• pp.406-412
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• 2005

This work is to present a new synthesis of metallic glass (MG)/metallic glass (MG) composites using gas atomization and spark plasma sintering (SPS) processes. The MG powders of $Cu_{54}Ni_6Zr_{22}Ti_{18}$ (CuA) and $Ni_{59}Zr_{15}Ti_{13}Nb_7Si_3Sn_2Al_1$(NiA) as atomized consist of fully amorphous phases and present a different thermal behavior; $T_g$ (glass transition temperature) and $T_x$ (crystallization temperature) are 716K and 765K for the Cu base powder, but 836K and 890K for the Ni base ones, respectively. SPS process was used to consolidate the mixture of each amorphous powder, being $CuA/10\%NiA\;and\;NiA/10\%CuA$ in weight. The resultant phases were Cu crystalline dispersed NiA matrix composites as well as NiA phase dispersed CuA matrix composites, depending on the SPS temperatures. Effect of the second phases embedded in the MG matrix was discussed on the micro-structure and mechanical properties.