• Title/Summary/Keyword: amorphous CoSiB

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Magnetoresistance Effects of Magnetic Tunnel Junctions with Amorphous CoFeSiB Single and Synthetic Antiferromagnet Free Layers (비정질 CoFeSiB 단일 및 합성형 반강자성 자유층을 갖는 자기터널접합의 자기저항 효과)

  • Hwang, J.Y.;Kim, S.S.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.15 no.6
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    • pp.315-319
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    • 2005
  • To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.

Dependence of Magneto-Impedence on Magnetizing Angle from Amorphous $Co_{66}Fe_4NiB_{14}Si_{15}$ Ribbon Axis (자화방향에 따른 비정질 $Co_{66}Fe_4NiB_{14}Si_{15}$ 리본의 자기임피던스 효과)

  • 유권상;김철기;윤석수;양재석;손대락
    • Journal of the Korean Magnetics Society
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    • v.7 no.3
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    • pp.134-139
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    • 1997
  • Magneto-impedence (MI) were measured in amorphous $Co_{66}Fe_4NiB_{14} Si_{15}$ ribbons at 100 kHz as a function of the angle from ribbon axis. The samples were prepared using etching method, with the angle deviated from ribbon axis, 0$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$, 60$^{\circ}$ and 90$^{\circ}$. The MI measured in 60$^{\circ}$ sample increased with the increasing magnetic fields. The dip in profile appears at H = 0 above the angle of 30$^{\circ}$. The maximum values of MI and their dips are increased with the cutting angle, but the maximum value of MI decreased at 90$^{\circ}$. The increase of MI with the angle was analyzed in terms of the transverse magnetic permeability.

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Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer (CoFe/NiFeSiB/CoFe 자유층을 갖는 이중장벽 자기터널접합의 바이어스전압 의존특성)

  • Lee, S.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.120-123
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    • 2007
  • The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

Fe-based Amorphous Alloy with High Strength and Toughness Synthesized based on nm-scale Phase Separation (nm-수준의 상분리를 이용하여 제조한 고강도 고인성 철계 비정질 합금)

  • Lee, Kwang-Bok;Park, Kyoung-Won;Yi, Sang-Ho;Lee, Jae-Chul
    • Korean Journal of Metals and Materials
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    • v.48 no.1
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    • pp.1-7
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    • 2010
  • Experiments have demonstrated that the addition of a moderate amount of V to $Fe_{52}Co_{(20-x)}B_{20}Si_4Nb_4V_x$ amorphous alloy enhances the plasticity of the alloy. In particular, $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy withstood a maximum of 8.3% strain prior to fracture along with a strength exceeding 4.7 GPa. Energy dispersive x-ray spectroscopy conducted on the $Fe_{52}Co_{17.5}B_{20}Si_4Nb_4V_{2.5}$ alloy exhibited evidence of compositional modulation, indicating that nm-scale phase separation had occurred at local regions. In this study, the role played by nm-scale phase separation on the plasticity was investigated in terms of structural disordering and shear localization in order to better understand the structural origin of the enhanced plasticity shown by the developed alloy.