• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1563-1566
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• 2009

One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.

• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.45-59
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• 1996

Ultrafine powders(UFPs) of aluminum nitride(AlN) have been synthesized by chemical reactions in the nitrogen atmosphere and the gaseous aluminum evaporated from Al powders in thermal plasmas produced by a DC plasma torch. A synthesis system consisting of a plasma torch, a finely-controllable powder feeder, a reaction chamber, and a quenching-collection chamber have been designed and manufactured, and a filter for gathering AlN UFPs produced by the quenching process subsequent to the synthesis is set up. The synthesis process is interpreted by numerical analyses of the plasma-particle interaction and the chemical equilibrium state, respectively, and a fully-saturated fractional factorial test is used to find the optimum process conditions. The degrees and ultrafineness of synthesis are evaluated by means of SEM, TEM, XRD, and ESCA analyses. AlN UFPs synthesized in the optimum process conditions have polygonal shapes of the size of 5-100 nm, and their purities differ depending on collecting positions and filter types, and the maximum purity obtained is 72 wt% at the filter.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3258-3264
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• 2012

Aluminum oxide ($Al_2O_3$) nanofibers were treated thermally under an ammonia ($NH_3$) gas stream balanced by nitrogen to form a thin aluminum nitride (AlN) layer on the nanofibers, resulting in the enhancement of thermal conductivity of $Al_2O_3$/epoxy nanocomposites. The micro-structural and morphological properties of the $NH_3$-assisted thermally-treated $Al_2O_3$ nanofibers were characterized by X-ray diffraction (XRD) and atomic force microscopy (AEM), respectively. The surface characteristics and pore structures were observed by X-ray photoelectron spectroscopy (XPS), Zeta-potential and $N_2$/77 K isothermal adsorptions. From the results, the formation of AlN on $Al_2O_3$ nanofibers was confirmed by XRD and XPS. The thermal conductivity (TC) of the modified $Al_2O_3$ nanofibers/epoxy composites increased with increasing treated temperatures. On the other hand, the severely treated $Al_2O_3$/epoxy composites showed a decrease in TC, resulting from a decrease in the probability of heat-transfer networks between the filler and matrix in this system due to the aggregation of nanofiber fillers.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.331-337
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• 2010

Aluminum nitride (AlN) thin films containing various amounts of Co content have been deposited by using a two-facing targets type sputtering (TFTS) system. The deposited films were also annealed successively and isothermally at different temperatures. Annealing treatment can control the physical properties as well as the microstructure of AlN films with Co particles. High magnetization and high resistivity are obtainable in AlN films containing dispersed Co particles. The coercivity of the films does not depend on annealing time, but it increases with increasing annealing temperature due to the increase of the grain size. A high saturation magnetization of 46 kG and resistivity of 2200 ${\mu}{\Omega}$-cm was obtained for AlN films containing 25 at% Co.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.931-937
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• 1995

AlN powder and whiskers were synthesized by direct nitridation of aluminum powder in pure nitrogen atmosphere. The nitridation reaction of aluminum powder was initiated by heating the sample to the ignition temperature and the reaction was finished in less than 3 minutes. AlN whisker-shaped morphology was observed predominantly when the sample was heated above 90$0^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.279-282
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• 2013

Recently, it has been interested much that AlN (Aluminum Nitride) crystals can be applied to UV LEDs and high power devices as like GaN and SiC crystals. The reports about commercial grade of AlN wafers in the world have been absent, however several results for growth of large size of AlN single crystals have been reported from abroad. In this report, the result of AlN single crystals of a diameter of about 8 mm grown are reported. Optical microscopic characterization was applied to observe the form of the crystals and the crystal quality was evaluated by FWHM measurement by DCXRD rocking curve analysis.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• International Journal of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.