• Title/Summary/Keyword: all-ceramics

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Structural and Electrical Properties of (Na0.5K0.5)NbO3 Ceramics with Addition of BiTiO3 (BiTiO3 첨가에 따른 (Na0.5K0.5)NbO3 세라믹스의 구조적, 전기적 특성)

  • Lee, Tae-Ho;Kim, Dae-Young;Jo, Seo-Hyeon;Jeong, Gwang-Ho;Lee, Sung-Gap
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.11
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    • pp.2093-2096
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    • 2011
  • In this study, lead-free $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by a conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.5}K_{0.5})NbO_3$ ceramics with the variation of $BiTiO_3$ were investigated. The results of X-ray diffraction analysis showed a typical polycrystalline perovskite structure without presence of the second phase in all specimens. Sintered density increased with an increasing of BTO and the specimen added with 0.07 mol% of $BiTiO_3$ showed the maximum value of 97.8%. Average grain size decreased and densification increased with an increasing of $BiTiO_3$ contents. The electromechanical coupling factor of the 0.01 mol% $BiTiO_3$ doped NKN specimens was 0.32. Dielectric constant, dielectric loss and Curie temperature of the 0.07 mol% $BiTiO_3$ doped NKN specimens were 1185, 0.145% and $400^{\circ}C$, respectively.

Microstructural, Dielectric and Electrical Properties of(Pb,La,Ce)TiO3 Ceramics for High Frequency Ceramic Resonator as a function of MnO2 Addition

  • Yoo, Ju-Hyung;Oh, Dong-On;Park, Chang-Yub;Kim, Ji-Hong;Lee, Sung-Ill;Ryu, Sung-Lim
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.3
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    • pp.25-28
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    • 2002
  • In this study, microstructural, dielectric and electrical properties of (Pb$\sub$0.83/) (La$\sub$0.2/Ce$\sub$0.8/)$\sub$0.08/TiO$_3$(PCT) ceramics as a function of MnO$_2$ addition and electrode size variation were investigated for 30 MHz high frequency ceramic resonator application. Grain size was gradually increased according to the increase of MnO$_2$ addition amount. Moreover, the density showed a constant value with increasing MnO$_2$ addition amount. Dielectric constant was decreased with increasing MnO$_2$ addition amount. Curie temperature of all the composition ceramics was nearly constant around 330$^{\circ}C$. The maximum D.R.of 50.5 dB and maximum Q$\sub$mt3/ of 1842 in the 3$\^$rd/ overtone vibration mode were appeared at the composition of 0.3wt% MnO$_2$, respectively.

Structural and Dielectric Properties of (Sr.Ca)$TiO_3$-based Ceramics with the Substitution of Ca (Ca 치환에 따른 (Sr.Ca)$TiO_3$계 세라믹스의 구조적 및 유전 특성)

  • 최운식;강재훈;서용진;김창일;김충혁;박용필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.879-884
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    • 2001
  • In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

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A study on the dielectric and electrical conduction properties of$(Sr_{1-x}.Ca_x)TiO_3$ grain boundary layer ceramics ($(Sr_{1-x}.Ca_x)TiO_3$입계층 세라믹의 유전 및 전기전도특성에 관한 연구)

  • 최운식;김충혁;이준웅
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.611-618
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    • 1995
  • The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

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Effects of Sintering Additives on the Thermal and Mechanical Properties of AlN by Pressureless Sintering (상압소결 질화알루미늄의 소결 첨가제 변화에 따른 열적 및 기계적 특성)

  • Hwang, Jin Uk;Mun, So Youn;Nam, Sang Yong;Dow, Hwan Soo
    • Journal of Powder Materials
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    • v.26 no.5
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    • pp.395-404
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    • 2019
  • Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

Structural and Electrical Properties of CoxMn3-xO4 Ceramics for Negative Temperature Coefficient Thermistors

  • Kim, Kyeong-Min;Lee, Sung-Gap;Kwon, Min-Su
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.330-333
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    • 2017
  • $Co_xMn_{3-x}O_4$ ($1.48{\leq}x{\leq}1.63$) ceramics were fabricated using the solid-state reaction method. Structural and electrical properties of specimens based on the composition ratio of Co were observed in order to investigate their applicability in NTC thermistors. All specimens showed a single spinel phase with a homogeneous tetragonal structure. The $Co_{1.57}Mn_{1.43}O_4$ specimen showed a maximum average grain size of approximately $6.47{\mu}m$. In all specimens, TCR properties displayed excellent characteristics of over $-4.2%/^{\circ}C$. The resistivity at 298 K and B-value of the $Co_{1.57}Mn_{1.43}O_4$ specimen were approximately $418{\Omega}-cm$ and 4300, respectively.

Structure and Electrical Properties of Pb($Zn_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi{1-x})O_3$ Ceramics (Pb($Zn_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi{1-x})O_3$세라믹의 구조적, 전기적 특성)

  • 조현무;이성갑;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.357-360
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    • 2000
  • Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

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Effect of surface finishing treatments on the color stability of CAD/CAM materials

  • Ozen, Funda;Demirkol, Nermin;Oz, Ozge Parlar
    • The Journal of Advanced Prosthodontics
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    • v.12 no.3
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    • pp.150-156
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    • 2020
  • PURPOSE. The aim of this study was to evaluate the effect of different surface finishing processes on the color stabilities of lithium disilicate glass-ceramics, zirconia-reinforced lithium silicate ceramics, and resin nanoceramics after artificial ageing. MATERIALS AND METHODS. 216 samples were prepared from 3 different CAD/CAM materials (LAVA Ultimate, IPS e.max CAD, VITA Suprinity) with A1 HT color at a size of 14 × 12 mm and a thickness of 0.5 ± 0.05 mm. Color measurements of the samples were performed with a spectrophotometer using color parameters and CIE Lab color system on a gray backing between baseline color and after 5000 cycles of artificial ageing in 4 stages (i.e. the first measurement before the treatment, the second measurement after polishing, the third measurement after cement application, and the fourth measurement after artificial ageing). The results were evaluated using the Variance analysis and Fisher's LSD test. RESULTS. Resin nanoceramics (LU) exhibited higher color change values than zirconia-reinforced lithium silicate (VS) and lithium disilicate (EC) ceramics after artificial ageing. Manual polishing and glazing resulted in similar color change for LU and VS (P>.05). In the EC group, glazing provided statistically different results as compared to the manual polishing and control groups (P<.05). Among the ceramic groups, color change values of the subgroup, which was treated by glazing, of the zirconia-reinforced lithium silicate (VS) and lithium disilicate (EC) samples were below the clinically acceptable level (ΔE < 3.5). CONCLUSION. The lowest color change for all stages was observed in Vita Suprinity.

The effect of silane applied to glass ceramics on surface structure and bonding strength at different temperatures

  • Yavuz, Tevfik;Eraslan, Oguz
    • The Journal of Advanced Prosthodontics
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    • v.8 no.2
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    • pp.75-84
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    • 2016
  • PURPOSE. To evaluate the effect of various surface treatments on the surface structure and shear bond strength (SBS) of different ceramics. MATERIALS AND METHODS. 288 specimens (lithium-disilicate, leucite-reinforced, and glass infiltrated zirconia) were first divided into two groups according to the resin cement used, and were later divided into four groups according to the given surface treatments: G1 (hydrofluoric acid (HF)+silane), G2 (silane alone-no heat-treatment), G3 (silane alone-then dried with $60^{\circ}C$ heat-treatment), and G4 (silane alonethen dried with $100^{\circ}C$ heat-treatment). Two different adhesive luting systems were applied onto the ceramic discs in all groups. SBS (in MPa) was calculated from the failure load per bonded area (in $N/mm^2$). Subsequently, one specimen from each group was prepared for SEM evaluation of the separated-resin-ceramic interface. RESULTS. SBS values of G1 were significantly higher than those of the other groups in the lithium disilicate ceramic and leucite reinforced ceramic, and the SBS values of G4 and G1 were significantly higher than those of G2 and G3 in glass infiltrated zirconia. The three-way ANOVA revealed that the SBS values were significantly affected by the type of resin cement (P<.001). FIN ceramics had the highest rate of cohesive failure on the ceramic surfaces than other ceramic groups. AFM images showed that the surface treatment groups exhibited similar topographies, except the group treated with HF. CONCLUSION. The heat treatment was not sufficient to achieve high SBS values as compared with HF acid etching. The surface topography of ceramics was affected by surface treatments.

Effect of Thickness on the Properties of Al Doped ZnO Thin Films Deposited by Using PLD (Al이 도핑된 ZnO 소재의 PLD 박막 두께 변화가 특성에 미치는 영향)

  • Pin, Min-Wook;Bae, Ki-Ryeol;Park, Mi-Seon;Lee, Won-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.7
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    • pp.568-573
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    • 2011
  • AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.