• 정보저장시스템학회논문집
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• 제3권3호
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• 정보저장시스템학회논문집
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• 제2권3호
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• pp.196-200
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• 2006

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.23-26
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• 1997

This work presents the TMAH/IPA anisotropic etching characteristics with addition of Pyrazine. (100) Si etching rate of 0.747 ${\mu}{\textrm}{m}$/min at 8$0^{\circ}C$ was obtained using TMAH 25 wt.% / IPA 17 vol.% / pyrazine 0.1 g. The etching rate of (100) Si is increased about 52% compare to pure TMAH 25 wt.%. But etching rate of (100) Si is decreased with increasing Pyrazine additive. Activation energy of TMAH/IPA/pyrazine is much lower than TMAH and TMAH/IPA solutions. Addition of Pyrazine does not effect on surface flatness and decreases undercutting ratio about 20 %. Therefore, TMAH/IPA/pyrazine is an attractive anisotropic etchant because of alkaline-ion free.

• 청정기술
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• 제2권1호
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• pp.47-52
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• 1996

인쇄회로기판(Printed Circuit Board) 생산 공정에서 발생하는 동폐액을 재활용, 재이용하기 위하여 유기 용매 추출법을 이용하였으며 유기용매로 Lix 64 N을 사용하였다. 산성인 동폐액과 염기성인 동폐액을 혼합하여 pH=2에서 부피 비율로 30%인 Lix 64 N은 17.1gr/l의 동을 추출하였다. 벤치 규모의 연속공정에서 추출단 4단, 세척단 4단, 역추출단 2단이 사용되었다. 회수된 동은 유산동으로 재활용되고 추잔액은 동부식액으로 재이용되었으며 동의 회수율과 유산동의 순도는 모두 99.9% 이상이었다.