• Journal of Microbiology and Biotechnology
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• v.23 no.12
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• pp.1683-1690
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• 2013

The cyclic AMP receptor protein (CRP) homolog, GlxR, controls the expression of several genes involved in the regulation of diverse physiological processes in Corynebacterium glutamicum. In silico analysis has revealed the presence of glxR binding sites upstream of genes ptsG, adhA, and ald, encoding glucose-specific phosphotransferase system protein, alcohol dehydrogenase (ADH), and acetaldehyde dehydrogenase (ALDH), respectively. However, the involvement of the GlxR-cAMP complex on the expression of these genes has been explored only in vitro. In this study, the expressions of ptsG, adhA, and ald were analyzed in detail using an adenylate cyclase gene (cyaB) deletion mutant and glxR deletion mutant. The specific activities of ADH and ALDH were increased in both the mutants in glucose and glucose plus ethanol media, in contrast to the wild type. In accordance, the promoter activities of adhA and ald were derepressed in the cyaB mutant, indicating that glxR acts as a repressor of adhA. Similarly, both the mutants exhibited derepression of ptsG regardless of the carbon source. These results confirm the involvement of GlxR on the expression of important carbon metabolic genes; adhA, ald, and ptsG.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.159-165
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• 2002

The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.119-124
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• 2015

As Location-Based Services (LBSs) of smartphones increases, the power consumption of a smartphone due to Global Positioning System (GPS) is becoming increasingly serious. This paper presents a new location estimation scheme for smartphones called Adaptive Location Detection (ALD). ALD adaptively detects the location of a smartphone considering the movement pattern of a user, category of applications executed in the smartphone, and the battery level. Simulation with various real applications and scenarios show that ALD reduces 37% of energy consumption compared to GPS. Nevertheless, it satisfies the accuracy requirement of each situation.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.246-246
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• 2013

Atomic layer deposition (ALD)에 의해 증착된 알루미늄 산화막($Al_2O_3$)은 고효율 결정질 실리콘 태양전지를 위한 우수한 패시베이션 효과를 보인다. $Al_2O_3$은 고정 음전하를 가지고 있기때문에 p-형 태양전지 후면에서 field effect passivation에 의한 효과적인 표면 패시베이션을 형성한다. 하지만 ALD에 의한 $Al_2O_3$ 증착은 긴 공정시간이 필요하다. 이는 기존의 태양전지 산업에 적합하지 않다. 본 논문에서는 공정 시간의 단축을 위해 plasma-assisted atomic layer deposition (PA-ALD) 기술을 사용함으로서 $Al_2O_3$을 증착했다. PA-ALD 기술은 trimethyaluminum (TMA)와 plasma 분위기에서의 $O_2$ 가스를 사용하여 표면 반응을 한다. $Al_2O_3$ 층의 특성을 최적화하기 위해 증착 온도를 $150{\sim}250^{\circ}C$의 범위에서 가변하고, 열처리 온도와 시간을 변화하였다. 결과적으로, 실리콘 웨이퍼를 이용하여 $1250^{\circ}C$의 공정온도에서 증착한 $Al_2O_3$은 $400^{\circ}C$에서 10분 동안의 열처리 온도와 시간에서 1,610 ${\mu}s$의 최고의 유효 반송자 수명을 보였다.

• Clinical and Molecular Hepatology
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• v.24 no.4
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• pp.417-423
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• 2018

Anemia appears frequently in patients with alcoholic liver disease (ALD) but has never been linked to bilateral nonarteritic anterior ischemic optic neuropathy (NAION). A 65-year-old woman with a medical history of alcoholic cirrhosis was admitted for bilateral NAION. On admission, she was found to have a low arterial pressure and severe normocytic anemia (48 g/L). The anemia was related to chronic bleeding due to antral gastritis along with other factors associated with ALD. The applied treatment consisted of urgent transfusion followed by high doses of proton-pump inhibitors, iron and vitamin supplementation, and support in lifestyle measures. Her hemoglobin levels remained stable after 2 years but the patient still suffered from visual loss. This case highlights the link between anemia and bilateral NAION in ALD patients. The optic nerve head is prone to infarction in this context due to the vascularization characteristics of ALD. Hemoglobin levels should be monitored in ALD patients to avoid the severe complication of NAION.

• Journal of IKEEE
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• v.24 no.4
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• pp.1117-1121
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• 2020

In this work, it was confirmed that a SnO2 catalyst deposited by an atomic layer deposition(ALD) process can be employed in AlGaN/GaN heterostructure FET to detect NO2 gas. The fabricated HFET sensors on AlGaN/GaN-on-Si platform demonstrated that the devices with or without n-situ SiN have sensitivity of 5.5 % and 38 % at 200 ℃, respectively with response to 100 ppm-NO2.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.591-592
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.543-545
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• 2009

With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43 $cm^2$/Vs, a threshold voltage of 0.85 V, a subthreshold slope of 3.30 V/dec, and an on-to-off current ratio of above $10^6$ with solid saturation.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2032-2037
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• 2007

Numerical analysis was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silane and ammonia as precursors. The present study simulated the surface reactions for as-deposited $Si_3N_4$ as well as the kinetics for the reactions of $SiH_4$ and $NH_3$on the semiconductor wafer. The present numerical results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.