• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.121-128
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• 2005

Solder joints in microelectronic devices are frequently operated at an elevated temperature in service. They also experience plastic deformation caused by temperature excursion and difference in thermal expansion coefficients. Deformed solders can go through a recovery and recrystallization process at an elevated temperature, which would alter their microstructure and mechanical properties. In this study, to predict the changes in mechanical properties of Pb-free solder joints at high temperatures, the high temperature microhardness of several Pb-free and composite solders was measured as a function of temperature, deformation, and annealing condition. Solder alleys investigated include pure Sn, Sn-0.7Cu, Sn-3.5Ag, Sn-3.8Ag-0.7Cu, Sn-2.8Ag-7.0Cu (composite), and Sn-2.7Ag-4.9Cu-2.9Ni (composite). Numbers are all in wt.$\%$ unless specified otherwise. Solder pellets were cast at two cooling rates (0.4 and $7^{\circ}C$/s). The pellets were compressively deformed by $30\%$ and $50\%$ and annealed at $150^{\circ}C$ for 2 days. The microhardness was measured as a function of indentation temperature from 25 to $130^{\circ}C$. Their microstructure was also evaluated to correlate with the changes in microhardness.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.33-38
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• 2007

We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.91-96
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• 2021

The enhancement of thermoelectric figure of merit was achieved by the simple processes of sieving and high energy ball milling, respectively, which are enable to reduce the grain size of n-type Bi₂Te₃ thermoelectric materials. By optimizing the grain size, the electrical conductivities and thermal conductivities were controlled. In this study, spark plasma sintering was employed for hindering the grain growth during the sintering process. The thermoelectric figure of merit was measured to be 0.78 in the samples with 30 min high energy ball milling process. Notably, this value was 40 % higher than that of pristine Bi₂Te₃ sample. This result shows the properties of thermoelectric materials can be readily controlled by optimization of grain size via simple ball milling process.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.85-91
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• 2024

In this study, we investigated a method of growing single crystal 𝛽-Ga₂O₃ thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the 𝛽-Ga₂O₃ thin film and confirmed the effect of the ratio between O₂ and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O₂/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100℃. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the and (${\bar{2}}01$) and (${\bar{4}}02$) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.80-80
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• 2010

전자제품의 소형화, 경량화, 고집적화가 심화됨에 따라 전자제품을 구성하는 회로의 미세화 또한 요구되고 있다. 이러한 요구는 경성회로기판 (rigid printed circuit board, RPCB) 뿐만 아니라 연성회로기판 (flexible printed circuit board, FPCB) 에도 적용되고 있으며 이에 대한 많은 연구 또한 이루어지고 있다. 연성회로기판은 일반적으로 절연층을 이루는 폴리이미드 (polyimide, PI)와 전도층을 이루는 구리로 이루어져 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 우수한 기계적 특성, 연속공정이 가능한 장점을 가지고 있으나, 고온다습한 환경하에서 높은 흡습성으로 인해 전도층을 이루는 구리와의 접합특성이 저하되는 단점 또한 가지고 있다. 또한 전도층을 이루는 구리는 고온다습한 환경하에서 산화 발생이 용이하기 때문에 접합특성의 감소를 야기할 수 있다. 따라서 본 연구에서는 고온다습한 조건하에서 sputtering and plating 공정을 통해 순수 Cr seed layer를 가지는 연성회로기판의 seed layer의 두께와 시효시간의 변화로 인해 발생하는 접합특성의 변화를 관찰하고 분석하였다. 본 연구에서는 두께 $25{\mu}m$의 일본 Kadena사(社)에서 제작된 폴리이미드 상에 sputtering 공정을 통해 순수 Cr으로 이루어진 각각 두께 100, 200, $300{\AA}$의 seed layer를 형성한 후 전해도금법을 이용, 두께 $8{\mu}m$의 구리 전도층을 형성한 시료를 사용하였다. 제작된 시료는 고온다습한 환경하에서의 접합 특성의 변화를 관찰하기 위하여 $85^{\circ}C$/85%RH 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효처리 한 후, Interconnections Packaging Circuitry (IPC) 규격에 의거하여 접합강도를 측정하였다. 시료의 전도층은 폭 3.2mm 길이 230mm의 패턴을 가지도록, 절연층은 폭 10mm, 길이 230mm으로 구성되었으며 이를 50.8mm/min의 박리 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 파면의 형상과 화학적 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 관찰 분석하였다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.1-8
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• 2006

Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.43-50
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• 2009

Although thin PCBs(Printed Circuit Boards) have recently been required for high density interconnection, high electrical performance, and low manufacturing cost, the utilization of thin PCBs is severely limited by warpage and reliability issues. Warpage of the thin PCB leads to failure in solder-joints and chip. The $B^2it$(Buried Bump Interconnection Technology) for PCB has been developed to achieve a competitive manufacturing price. In this study, chip temperature, package warpage, chip stress and solder-joints stress characteristics of the PCB prepared with $B^2it$ process have been calculated using thermo-mechanical coupled analysis by the FEM(Finite Element Method). FEM computation was carried out with the variations in bump shapes and kinds of materials under 1.5W power of chip and constant convection heat transfer. The results show that chip temperature distribution reached more quickly steady-state status with PCB prepared with $B^2it$ process than PCB prepared with conventional via interconnection structure. Although $B^2it$ structures are effective on low package warpage and chip stress, with high strength bump materials arc disadvantage for low stress of solder-joints. Therefore, it is recommended that optimized bump shapes and materials in PCB design should be considered in terms of reliability characteristics in the packaging level.