• Journal of electromagnetic engineering and science
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• v.12 no.4
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• pp.227-233
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• 2012

This paper describes a novel and compact biosensing platform using an RF active system. The proposed sensing system is based on the oscillation frequency deviation due to the biomolecular binding mechanism on a resonator. The impedance variation of the resonator, which is caused by a specific biomolecular interaction results in a corresponding change in the oscillation frequency of the oscillator so that this change is used for the discrimination of the biomolecular binding, along with concentration variation. Also, a Surface Acoustic Wave (SAW) filter is utilized in order to enhance the biosensing performance of our system. Because the oscillator operates at the skirt frequency range of the SAW filter, a small amount of oscillation frequency deviation is transformed into a large variation in the output amplitude. Next, a power detector is used to detect the amplitude variation and convert it to DC voltage. It was also found that the frequency response of the biosensing system changes linearly with three streptavidin concentrations. Therefore, we expect that the proposed RF biosensing system can be applied to bio/medical applications capable of detecting a nano-sized biomolecular interaction.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.234-238
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• Journal of electromagnetic engineering and science
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• v.3 no.2
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• pp.118-125
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• 2003

This paper presents a 5.8-㎓ oscillator that uses a novel defected ground structure(DGS), which is etched on the metallic ground plane. As the suggested defected ground structure is the structure for mounting an active device, it is the roles of a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM simulation ,md simple circuit analysis method. In order to demonstrate a new DGS oscillator, we designed the oscillator at 5.8-㎓. The experimental results show 4.17 ㏈m output power with over 22 % dc-to-RF power efficiency and - 85.8 ㏈c/Hz phase noise at 100 KHz offset from the fundamental carrier at 5.81 ㎓.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.6
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• pp.404-409
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• 2014

This paper presents a Spread Spectrum Clock Generator (SSCG) based on Relaxation oscillator using Up/Down Counter. The current is controlled by a counter and the spread spectrum of the Relaxation Oscillator. A Relaxation Oscillator with temperature compensation using the BGR and ADC is presented. The current to determine the frequency of the Relaxation Oscillator can be controlled. The output frequency of the temperature can be compensated by adjusting the current according to the temperature using the code that is the output from the ADC and BGR. EMI Reduction of SSCG is 11 dB, and Spread down frequency is 150 kHz. The current consumption is $600{\mu}A$ from 5V and the operating frequency is from 2.3 MHz to 5.75 MHz. The rate of change of the output frequency with temperature was approximately ${\pm}1%$. The SSCG is fabricated in a 0.35um CMOS process with active area $250um{\times}440um$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.728-735
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• 2016

A 70 MHz temperature-compensated on-chip CMOS relaxation oscillator for mobile display driver ICs is proposed to reduce frequency variations. The proposed oscillator compensates for frequency variation with respect to temperature by adjusting the bias currents to control the change in delay of comparators with temperature. A bandgap reference (BGR) is used to stabilize the bias currents with respect to temperature and supply voltages. Additional temperature compensation for the generated frequency is achieved by optimizing the resistance in the BGR after measuring the output frequency. In addition, a trimming circuit is implemented to reduce frequency variation with respect to process. The proposed relaxation oscillator is fabricated using 45 nm CMOS technology and occupies an active area of $0.15mm^2$. The measured frequency variations with respect to temperature and supply voltages are as follows: (i) ${\pm}0.23%$ for changes in temperature from -30 to $75^{\circ}C$, (ii) ${\pm}0.14%$ for changes in $V_{DD1}$ from 2.2 to 2.8 V, and (iii) ${\pm}1.88%$ for changes in $V_{DD2}$ from 1.05 to 1.15 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.383-390
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• 2014

This paper presents an excitatory CMOS neuron oscillator circuit design, which can synchronize two neuron-bursting patterns. The excitatory CMOS neuron oscillator is composed of CMOS neurons and CMOS excitatory synapses. And the neurons and synapses are connected into a close loop. The CMOS neuron is based on the Hindmarsh-Rose (HR) neuron model and excitatory synapse is based on the chemical synapse model. In order to fabricate using a 0.18 um CMOS standard process technology with 1.8V compatible transistors, both time and amplitude scaling of HR neuron model is adopted. This full-chip integration minimizes the power consumption and circuit size, which is ideal for motion control unit of the proposed bio-mimetic micro-robot. The experimental results demonstrate that the proposed excitatory CMOS neuron oscillator performs the expected waveforms with scaled time and amplitude. The active silicon area of the fabricated chip is $1.1mm^2$ including I/O pads.

• ETRI Journal
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• v.33 no.2
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• pp.201-209
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• 2011

This paper presents a wide-band fine-resolution digitally controlled oscillator (DCO) with an active inductor using an automatic three-step coarse and gain tuning loop. To control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. To cover the wide tuning range, a three-step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO tuning range is 58% at 2.4 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.13-21
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• 1997

In this paper, the oscillator type active antenna used as an element of active phased array antenna is designed and fabricated using slot coupling. The radiating element and active circuit are fabricated on each layer respectively and coupled electromagnetically through slot on the ground plane. This structure can solve the problems such as narrow bandwidth of microstrip antenna, spurious radiation by active circuits, and spaces for integration of the feeding circuits which are caused by integrating antennas with oscillator circuits in the same layer. The active antenna in this paper, the oscillation frequency can be tuned linearly by controlling the drain bias voltage of FET. The frequency tuning range is between 12.37 GHz to 12.65 GHz when bias voltage is varied from 3V to 9V, thus frequency tuning bandwidth is 280 MHz (2.24%). The output power of antenna is uniform within 5dB over frequency tuning range. Therefore this active antenna can be used as an element of linear or planar active phased array antennas.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.207-212
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• 2013

A new CMOS voltage-bias differential LC voltage-controlled oscillator (LC-VCO) with active source degeneration is proposed. The proposed degeneration technique preserves the quality factor of the LC-tank which leads to improvement in phase noise of VCO oscillators. The proposed VCO shows the high figure of merit (FOM) with large tuning range, low power, and small chip size compared to those of conventional voltage-bias differential LC-VCO. The proposed VCO implemented in 0.18-${\mu}m$ CMOS shows the phase noise of -118 dBc/Hz at 1 MHz offset oscillating at 5.03 GHz, tuning range of 12%, occupies 0.15 $mm^2$ of chip area while dissipating 1.44 mW from 0.8 V supply.