• 기술혁신학회지
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• 제16권2호
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• pp.408-423
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• 2013

창조와 혁신이 성공의 중요한 키워드로 대두되면서 창의적 문제해결 방법론인 트리즈(TRIZ)에 대한 관심이 고조되고 있다. 지금까지 트리즈는 전자 및 기계분야에 도입되어 제품혁신의 원동력으로 활용되고 있어, 본 연구에서는 미래유망기술인 바이오분야에 트리즈 기법을 적용하여 문제를 해결하고 혁신적인 연구개발을 추진할 수 있는지의 가능성을 타진해보고자 하였다. 바이오분야 연구 중 홍삼제조과정에서 발생하는 문제를 선정하고, 이의 문제와 문제원인 구분 및 모순을 도출하고 트리즈의 발명 40가지 원리를 적용하여 홍삼 제조과정에서 발생되는 갈라짐 문제를 해결하고자 하였다. 홍삼은 수삼을 스팀 등의 방법으로 쪄서 익혀 말린 담갈색의 인삼으로, 홍삼의 갈라짐은 유효성분의 유출과 외형등급 하락으로 상품성을 떨어트리는 주요 원인이 된다. 트리즈 툴(Tool) 중 모순 매트릭스 및 브레인스토밍을 통해 적용 가능한 발명원리를 도출하고, 실험을 통해 홍삼 제조과정에서 갈라짐을 방지할 수 있는 유용한 방법들을 제안하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• 한국분말재료학회지
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• 제23권4호
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• pp.263-269
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• 2016

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type $Bi_2Te_3$ based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type $Bi_2Te_3$ composite powder has a composition of $Bi_{0.5}Sb_{1.5}Te_3$ (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.

• 한국분말재료학회지
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• 제21권3호
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• pp.179-184
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• 2014

In this study, we prepare polymer solar cells incorporating organic ligand-modified Ag nanoparticles (O-AgNPs) highly dispersed in the P3HT:PCBM layer. Ag nanoparticles decorated with water-dispersible ligands (WAgNPs) were also utilized as a control sample. The existence of the ligands on the Ag surface was confirmed by FT-IR spectra. Metal nanoparticles with different surface chemistries exhibited different dispersion tendencies. O-AgNPs were highly dispersed even at high concentrations, whereas W-AgNPs exhibited significant aggregation in the polymer layer. Both dispersion and blending concentration of the Ag nanoparticles in P3HT:PCBM matrix had critical effects on the device performance as well as light absorption. The significant changes in short-circuit current density ($J_{SC}$) of the solar cells seemed to be related to the change in the polymer morphology according to the concentration of AgNPs introduced. These findings suggested the importance of uniform dispersion of plasmonic metal nanoparticles and their blending concentration conditions in order to boost the solar cell performance.

• 한국분말재료학회지
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• 제24권4호
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• pp.308-314
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• 2017

$Fe_3O_4$/Fe/graphene nanocomposite powder is synthesized by electrical wire explosion of Fe wire and dispersed graphene in deionized water at room temperature. The structural and electrochemical characteristics of the powder are characterized by the field-emission scanning electron microscopy, X-ray diffraction, Raman spectroscopy, field-emission transmission electron microscopy, cyclic voltammetry, and galvanometric discharge-charge method. For comparison, $Fe_3O_4$/Fe nanocomposites are fabricated under the same conditions. The $Fe_3O_4$/Fe nanocomposite particles, around 15-30 nm in size, are highly encapsulated in a graphene matrix. The $Fe_3O_4$/Fe/graphene nanocomposite powder exhibits a high initial charge specific capacity of 878 mA/g and a high capacity retention of 91% (798 mA/g) after 50 cycles. The good electrochemical performance of the $Fe_3O_4$/Fe/graphene nanocomposite powder is clearly established by comparison of the results with those obtained for $Fe_3O_4$/Fe nanocomposite powder and is attributed to alleviation of volume change, good distribution of electrode active materials, and improved electrical conductivity upon the addition of graphene.

• 공학교육연구
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• 제20권6호
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• pp.43-51
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• 2017

As the need for entrepreneurship to create new values and innovate in the rapidly changing social environment is emerging, education for entrepreneurial is emerging in university education. The purpose of this study is to understand the current status of entrepreneurship education and to derive the priority of education based on actual indicators of importance-performance. For this study, we surveyed 227 female college students in E Woman's University by using the Importance-Performance Analysis (IPA) method for entrepreneurship factors. The result showed that the means of importance of all factors and sub-factors of entrepreneurship were higher than the means of performance of them, and the difference was statistically significant except for the determination. In addition, the results of the IPA matrix analysis showed that the factors that needed urgent improvement in self-confidence, future-orientation, active/innovative activities, and proactivity. Based on the results of this study, the implications of the development of entrepreneurship curriculum for college students in engineering field were discussed. This study is meaningful that it provided practical basic information of curriculum design leading to the manifestation of entrepreneurship of women in engineering field by analyzing entrepreneurship of female engineering students and deriving priority factors of educational treatment.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• Journal of Plant Biology
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• 제35권3호
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• pp.219-227
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• 1992

지질성 종자(해바라기, 피마자, 잣나무)와 전분성 종자(완두, 옥수수)를 대상으로 배유와 자엽세포내의 저장지질의 형성, 분포 및 구조적 변화 등과 지질가수분해효소의 활성부위 및 세포내 분포양상 등을 세포화학적 방법을 이용하여 조사하였다. 채종후의 지질 및 전분성 종자의 배유와 저장성 자엽세포에는 구형의 단백과립과 지질소구인 스페로솜, 전분과립 등의 저장물질이 널리 분포하였으며 세포내소기관은 드물게 관찰되었다. 활면소포체에서 형성되어 방출된 소포들과 스페로솜의 초기 단계로 여겨지는, 전자밀도가 낮은 막성의 과립들은 염색상이 스페로솜의 그것과 동일하였다. 조면소포체에서 방출된 전자밀도가 높은 과립들은 원형질막의 인접부위에서 관찰되었다. 지질염색반응 결과, 일반적인 미세구조의 염색상과는 상이하게 단백과립내의 단백질보다는 구형의 스페로솜의 전자밀도가 높고 균일함이 확인되어 스페로솜의 주요 구성성분은 지질임을 알 수 있었다. 스페로솜과 활면소포체에서 방출하는 물질을 함유한 소포는 염색상이 동일하였다. 지질가수분해효소는 분해과정이 진행중인 스페로솜의 기질과 막 주변부, 그리고 원형질막 부근에서 강한 활성을 보였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.