• Korean Journal of Materials Research
• /
• v.13 no.6
• /
• pp.398-403
• /
• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• Korean Journal of Materials Research
• /
• v.5 no.6
• /
• pp.639-643
• /
• 1995

The temperature dependence of the dark conductivity was studied on undoped hydrogenated amorphous germanium (a-Ge : H) over the range from 297 to 423 K. The pre-exponential factor $\sigma$$\_$0/ and activation energy E$\_$C/-E$\_$F/ are determined by an Arrhenius plot. The Arrhenius plot of the electrical conductivity shows a kink around the kink temperature and then is composed of two exponential functions. The obtained statistical shift ${\gamma}$$\_$F/ was about 8.65${\times}$10$\^$-3/eV/K and the pre-exponential factor $\sigma$$\_$0/ was about 2$\Omega$$\^$-1/cm$\^$-1/. A temperature dependent defect density is numerically calculated from the conductivity data. A change of the defect density is observed in the factor of about two in the range of the experimental temperature.

• Korean Journal of Materials Research
• /
• v.26 no.1
• /
• pp.54-60
• /
• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.8
• /
• pp.17-27
• /
• 2000

This paper presents deposition and characterization of hydrogenated microcrystalline silicon (${\mu}c$ -Si:H) films on low cost glass substrate by Hot Wire CVD(HWCVD). The HWCVD ${\mu}c$ -Si:H films had deposition rates ranging from 2${\AA}$/sec to 35${\AA}$/sec with the variations of preparation conditions, which was 10 times higher than that of the films obtained from the conventional PECVD method. From the Raman spectroscopy, the prepared silicon films were found to be composed of the mixture of crystalline and amorphous phases. The crystalline volume fraction and average crystallite size, obtained from the Raman To mode peak near 520cm$^{-1}$, were 37-63% and 6-10 nm, respectively. The conductivity activation energy($E_a$) of the ${\mu}c$ -Si:H films, representing the difference of conduction band and Fermi level in an intrinsic semiconductors, increased from 0.22eV to 0.68eV with increasing pressure from 30mTorr to 300mTorr. The increase of $E_a$ with pressure indicates that the deposited films have properties close to intrinsic semiconductors, which is also proved with low dark conductivity of the ${\mu}c$ -Si:H deposited at 300mTorr. The tungsten concentration incorporated into films was about $6{\times}10^{16}atoms/cm^3$ in the samples prepared at wire temperature of 1800$^{\circ}C$.

• Elastomers and Composites
• /
• v.31 no.2
• /
• pp.122-129
• /
• 1996

The Thermal decomposition of the ${\alpha}-Cellulose$ and NaCl was studied using a thermal analysis technique in the steam of nitrogen gas with 30ml/min at various heating ranges from 4 to $20^{\circ}C/min$. The Derivative and Integral method used to be obtained values of activation energy of decomposition reaction. 1. The values of activation energy evaluated by Derivative and Intergral method were consistent with each other very well. 2. The maximum value of heat of decomposition evalated by DSC method was ${\alpha}-Cellulose/NaCl= 90/10$. 3. The thermogravimetric trace curve agreed with the theoretical equation.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.37 no.4
• /
• pp.405-413
• /
• 2013

The char oxidation characteristics of high ash coal were experimentally investigated at several temperatures (from 900 to $1300^{\circ}C$) for 4 types of coals (Gunvor, Glencore, Noble, and ECM) under atmospheric pressure in a drop tube furnace (DTF). The char reaction rate was calculated from the exhaust gas concentrations (CO and $CO_2$) using FT-IR, and the particle temperature was measured using the two-color method. In addition, the activation energy and pre-exponential factor for high ash coal char were calculated based on the Arrhenius equation. The results show that as the ash content increases, the particle temperature and area reactivity decreases. This is because in high ash coal, the large heat capacity of the ash, ash vaporization, and relatively low fixed carbon content of ash suppress combustibility during char oxidation. As a result, the higher ash content of coal leads to high activation energy.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
• /
• v.24 no.2
• /
• pp.41-48
• /
• 2018

A printable time temperature integrator (TTI) consisting of oxygen indicator and cover films with various oxygen permeability was developed. The printing ink contained methylene blue (oxygen indicator) which changed in color during storage. $TiO_2$ and glycerol for UV-activation of TTI and zein and ethanol for printing performance were also contained in the printing ink. The cover film on the ink was employed to control the color change rate and temperature dependency (Arrhenius activation energy, $E_a$) by using the different films (PE, PET, OPP, and LLDPE). The film properties were varied by annealing. TTI was produced by silk screen printing. As a result, the color change rates were different for the cover films, being the highest in TTI with LLDPE, followed by OPP, PE, and PET. The rate decreased with increase in the cover film thickness. The $E_a$ was the highest in TTI with LLDPE, followed by OPP, PE, and PET. The $E_a$ did not change with the cover film thickness. The annealed PVC and PET film were lower in oxygen permeability than the unannealed ones, indicating the lower color change rate.

• Journal of the Korean Chemical Society
• /
• v.22 no.6
• /
• pp.386-395
• /
• 1978

The rates of the forward mutarotation of poly(trans-5-methyl-L-proline) in trifluoro-ethanol and of the reverse mutarotation in trifluoroethanol-n-butanol (1:4 v/v) have been measured at a number of temperatures and polymer concentrations. It was found that both mutarotations are of first-order with respect to the polymer concentration. A modified Arrhenius equation to evalute the activation energy was derived for the reaction kinetics, in which the relation between the measured physical properties and concentration, and the order of tle reaction are uncertain. The activation energies for the forward and reverse mutarotation were found to be 32.5 and 33.5 kcal per residue mole, respectively, which are about 10 kcal per residue mole higher than the $E_a$ for the mutarotation of polyproline (the resonance energy of amide bonds). The excessive quantity of the activation energy was attributed to the steric barrier between carbonyl and methyl groups during the cis-trans isomerization of amide bonds in the polymer.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.164-168
• /
• 2011

Nanocrystalline cadmium sulphide (CdS) thin films were prepared using chemical bath deposition (CBD), and the structural, optical and photoconductive properties were investigated. The crystal structure of CdS thin film was studied by X-ray diffraction. The crystallite size, dislocation density and lattice constant of CBD CdS thin films were investigated. The dislocation density of CdS thin films initially decreases with increasing film thickness, and it is nearly constant over the thickness of 2,500 ${\AA}$. The dislocation density decreases with increasing the crystallite size. The Urbach energies of CdS thin films are obtained by fitting the optical absorption coefficient. The optical band gap of CdS thin films increases and finally saturates with increasing the lattice constant. The Urbach energy and optical band gap of the 2,900 A-thick CdS thin film prepared for 60 minutes are 0.24 eV and 2.83 eV, respectively. The activation energies of the 2,900 ${\AA}$-thick CdS thin film at low and high temperature regions were 14 meV and 31 meV, respectively. It is considered that these activation energies correspond to donor levels associated with shallow traps or surface states of CdS thin film. Also, the value of ${\gamma}$ was obtained from the light transfer characteristic of CdS thin film. The value of ${\gamma}$ for the 2,900 A-thick CdS thin film was 1 at 10 V, and it saturates with increasing the applied voltage.

• Polymer(Korea)
• /
• v.26 no.5
• /
• pp.599-606
• /
• 2002

In this study, 4,4'-tetraglycidyl diaminodiphenyl methane (TGDDM)/polyamideimide (PAI) blends were cured using diaminodiphenyl sulfone (DDS). And the effect of addition of different PAI contents to neat TGDDM was investigated in the thermal, mechanical, and morphological properties of the blends. The cure behavior and thermal stability of the cured specimens were monitored by differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA), respectively. Also, the critical stress intensity factor (K$\_$IC/) was measured in UTM, and the phase separation behavior and final morphology of TGDDM/PAI blends were examined in scanning electron microscopy(SEM). As a result, the cure temperature and cure activation energy (E$\_$a/) were decreased with increasing the PAI content. The decreasing of cure temperature and cure activation energy were probably due to the presence of secondary amine group of PAI backbone used as co-initiator. But, the decomposition activation energy (E$\_$t/) and K$\_$IC/ value were increased up to 5. 10 phr of PAI content, respectively and they were decreased above the PAI contents. These results were explained on the basis of chain scission reaction by etherification. And morphology of blends observed from SEM was confirmed in co-continuous structures.