• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.559-562
• /
• 2004

A 2.2-inch QCIF+ $(176{\times}RGB{\times}220)$ TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature $({\sim}-20^{\circ}C)$, the integrated row driver operation is dramatically effected by the electron drift mobility variation $({\sim}50%)$ and the threshold voltage shift $({\sim}1V)$ of the a-Si TFT. We studied the temperature dependency of the circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1546-1549
• /
• 2006

We have developed $EPLaR^{TM}$, a new way of making flexible electrophoretic displays. The TFTs have the same good performance, reliability and mature manufacturing processes as TFTs used in LCD monitors and LCD-TVs. We are working with partners to show that plastic displays can be made in existing TFT-LCD factories alongside glass LCDS. In this talk we describe the EPLaR process and show results for TFT arrays on plastic made in a factory by standard ${\alpha}$-Si TFT processing.

• Journal of Information Display
• /
• 제10권1호
• /
• pp.33-36
• /
• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
• /
• pp.2061-2062
• /
• 2006

a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.46-49
• /
• 2002

Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.

• 한국정보처리학회논문지
• /
• 제6권9호
• /
• pp.2548-2557
• /
• 1999

평판 디스플레이 분야의 발달로 대형화와 고해상도화가 진행됨에 따라 이에 알맞은 새로운 개념의 평판 디스플레이를 위한 컨트롤러가 필요하게 되었다. 이에 본 논문에서는 평판 디스플레이 중에서 가장 많은 비중을 차지하는 TFT LCD를 위한 SXGA급 해상도를 지원하는 컨트롤러를 설계하였다. 병렬 버스 구조의 새로운 LCD 컨트롤러의 구조를 제시하였으며, 저해상도 화면을 SXGA급 해상도의 화면으로 확대할 수 있도록 설계하였다. 또한 Synopsys VHDL을 이용하여 제안한 컨트롤러의 기능 검증 및 회로 합성을 수행하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1701-1703
• /
• 2006

Here we describe a novel driving scheme in the form of negative AC bias stress (NAC) to compensate shift in the threshold voltage for hydrogenated amorphous silicon (${\alpha}$-Si:H) thin film transistor (TFT) for AMOLED applications. This scheme preserves the threshold voltage shift of ${\alpha}$-Si:H TFT for infinitely long duration of time(>30,000 hours) and thereby overall performance, without using any additional TFTs for compensation. We briefly describe about the possible driving schemes in order to implement for real time AMOLED applications. We attribute most of the results based on concept of plugging holes and electrons across the interface of the gate insulator in a controlled manner.

• Journal of Information Display
• /
• 제2권2호
• /
• pp.27-31
• /
• 2001

Transistor slicing refers to the use of multiple smaller transistors in implementing a large MOS transistor. What is special about transistor slicing is that it can reduce the effects of device non-uniformity introduced during the fabrication process. The paper presents the idea of transistor slicing and analyzes the benefits of using transistor slicing in the context of Poly-Si TFT-LCD driving.

• Journal of Information Display
• /
• 제1권1호
• /
• pp.29-31
• /
• 2000

A 21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixels is successfully developed. To obtain X-ray image of satisfactory quality, a novel structure with a storage electrode on BCB is proposed. The structure reduces the parasitic capacitance of data line, which is one of the main sources of signal noise. Also, the structure shows greater resistance to failure than that of the conventional design.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.944-947
• /
• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.