• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.314-318
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• 2010

We fabricated a plasma texturing for multi-crystalline silicon cells using reactive ion etching (RIE). Multi-crystalline Si cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. Elimination of plasma damage has been achieved while keeping front reflectance to extremely low levels. We will discuss reflectance, quantum efficiency and conversion efficiency for multi-crystalline Si solar cell by each RIE process conditions.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1595-1597
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• 2003

This paper presents the deposition of ${\mu}c$-Si:H thin-film and fabrication of a solar cell by VHF-PECVD method. The ${\mu}c$-Si:H thin films and pin-type solar cells are fabricated using multi-chamber cluster tool system. A 7.4% conversion efficiency was achieved from ${\mu}c$-Si:H thin film solar cells with total thickness less than $5{\mu}m$. The physical characteristic was measured by Raman spectroscopy, Solar cell characteristic was measured under AM1.5 illumination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.235-235
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• 2010

The Anti-reflection coating(ARC) properties can be formed on silicon substrate using a simple electrochemical etching technique. This etching step can be improve solar cell efficiency for a solar cell manufacturing process. This paper is based on the removal of silicon atoms from the surface a layer of porous silicon(PSi). Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. It have demonstrated the feasibility of a very efficient porous Si layer, prepared by a simple, cost effective, electrochemical etching method. We expect our research can results approaching to lower than 10% of reflectance by optimization of process parametaer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.54-54
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• 2009

Ag thick film has been used for electrode materials with the excellent conductivity. Ag electrode is used in screen-printed silicon solar cells as a electrode material. Compared to photolithography and buried-contact technology, screen-printing technology has the merit of fabricating low-priced cells and enormous cells in a few hours. Ag paste consists of Ag powders, vehicles and additives such as frits, metal powders (Pb, Bi, Zn). Frits accelerate the sintering of Ag powders and induce the connection between Ag electrode and Si wafer. Thermophysical properties of frits and reactions among Ag, frits and Si influence on cell performance. In this study, Ag pastes were fabricated with adding different kinds of frits. After Ag pastes were printed on silicon wafer by screen-printing technology, the cells were fired using a belt furnace. The cell parameters were measured by light I-V to determine the short-circuit current, open-circuit voltage, FF and cell efficiency. In order to study the relationship between the reactivity of Ag, frit, Si and the electrical properties of cells, the reaction of frits and Si wafer on was studied with thermal properties of frits. The interface structure between Ag electrode and Si wafer were also measured for understanding the reactivity of Ag, frit and Si wafer. The excessive reactivity of Ag, frit and Si wafer certainly degraded the electrical properties of cells. These preliminary studies suggest that reactions among Ag, frits and Si wafer should optimally be controlled for cell performances.

• 전기의세계
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• v.25 no.5
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.1-7
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• 1997

The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.1-39.1
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• 2010

이종접합태양전지는 단결정 실리콘 기판 표면에 고품질 비정질 실리콘층을 적층함으로써 전기의 근원인 전하의 재결합 손실을 줄여 높은 개방전압을 얻을 수 있다는 특징이 있다. 초박형 태양전지는 기존 태양전지보다 뛰어난 광전변환 특성(Photovoltaic characteristic)을 가지고 두께가 얇아 제품 형상 시 자유도가 높아진다. 본 논문에서는 n-type Bare wafer($160{\sim}180{\mu}m$)를 이용하여 $50{\mu}m$의 웨이퍼를 제작하였다. a-Si:H(p)_a-Si:H(i)_c-Si(n)의 광흡수층 구조를 성막하여 cell을 제작하였다. 그 결과 Voc(Open Circuit Voltage)가 0.666, Jsc(Short-Circuit Current)가 34.77, FF(Fill Factor) 69.413, Efficency 16.07%를 달성했다.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.130-134
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• 2014

We have fabricated the selective emitter solar cell using double textured nanowires structure. The $40{\times}40mm2$-sized silicon substrates were textured to form the pyramid-shaped surface and the nanowires were fabricated by metal assisted chemical etching process using Ag nanoparticles, subsequently. The heavily doped and shallow emitters for selectiv eemitter solar cells were prepared through the thermal $POCl_3$ diffusion and chemical etch-back process, respectively. The front and rear electrodes were prepared following conventional screen printing method and the widths of fingers have been optimized. The selective emitter solar cell using double textured nanowires structure achieved a conversion efficiency of 17.9% with improved absorption and short circuit current density.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.92-100
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• 1985

New N+N/P HLE solar cells with N+ surface charge accumulated layer in the emitter region are fabricated on the N/P Si epiwafer by incorporating high fixed positive charge density (Qss) at the Si-AR layer interface. Solar cells are classified into two categories, i.e, OCI and NCI Cell depending on AR layer, SiOl and Si3 N4/sioxynitride layer respectively. The distribution of Qss in the Si-AR layer interface is examined by C-V plot. It shows that the surface charge accumulated layer is formed more effectively in the NCI cell (Qss=1.79-1.84$\times$1012cm-2) than in the OCI cell (Qss=3.03~4.40$\times$1011 cm-2). The efficiency characteristics are evaluated under the JCR halogen lamp of 100 mw/cm2. The average (maximum) conversion efficiency for active area is 15.18 (15.46)% in the OCI cell and 16.31 (17.07)% in the NCI cell.